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Cellular-Automaton Circuits Using Single-Electron-Tunneling Junctions

Research Project

Project/Area Number 08650396
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field 電子デバイス・機器工学
Research InstitutionHokkdai University

Principal Investigator

WU Nan-Jian  Hokkaido Univ., Grad.School of Eng.Instructor, 大学院・工学研究科, 助手 (00250481)

Co-Investigator(Kenkyū-buntansha) AKAZAWA Masamichi  Hokkaido Univ., Grad.School of Eng.Assoc.Prof., 大学院・工学研究科, 助教授 (30212400)
AMEMIYA Yoshihito  Hokkaido Univ., Grad.School of Eng.Prof., 大学院・工学研究科, 教授 (80250489)
Project Period (FY) 1996 – 1997
Project Status Completed (Fiscal Year 1997)
Budget Amount *help
¥2,500,000 (Direct Cost: ¥2,500,000)
Fiscal Year 1997: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 1996: ¥1,500,000 (Direct Cost: ¥1,500,000)
Keywordscellular automaton / logic device / single-electron-tunneling / SET circuit / intrinsic semiconductor island / セリオートマトン / 学位セル
Research Abstract

We propose cellular automaton cicuits that use single-electron-tunneling cicuits (SET-CA). The unit cell consists of four intrinsic semiconductor islands and four single-electron-tunneling junctions. The dielectric constant of the intrinsic semiconductor is much larger than that of the junction insulator.The unit cell is charged with two single electrons. Polarization states of the two single electrons in the unit cell can be used to encode a binary signal. We designed various binary logic SET-CA circuits, and analyzed their operation by computer simulation. It was demonstrated that the SET-CA circuits having appropriate arrangements of the cells can perform correct signal transmission and elemental logic operations such as NOT,NAND,and NOR.

Report

(3 results)
  • 1997 Annual Research Report   Final Research Report Summary
  • 1996 Annual Research Report
  • Research Products

    (14 results)

All Other

All Publications (14 results)

  • [Publications] Nan-Jian Wu et.al: "Cellular-Automaton circuits Using Sinle-electron Tunnesing Tunctions" Jpn.J.Appl.Phys.36. 2621-2627 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M., Akazawa et.al: "Annealing method for operoting quantum-ceclar-Automaton,systems" J.Appl.Phys.82. 5176-5184 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Nan-Jian Wu et.al: "Clvantum cellular Automaton Device using the in age charge Effect" Jpn.J.Appl.Phys.37(印刷中). (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Nan-Jian Wu: "Quantum Cellular Automaton Device Using the Image Charge Effect" Jpn.J.Appl.Phys.36. 2621-2627 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Nan-Jian Wu: "Cellular-Automaton Circuits Using Single-Electron-Tunneling Junctions" J.Appl.Phys.82. 5176-5184 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Masamichi Akazawa: "Annealing Method for Operating Quantum-Cellular-Automaton Systems" to be published in Jpn.J.Appl.Phys.37. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Nan-Jian Wu et.al: "Cellular-Automaton Circuits Using Single-eleetron- tunneling Junctions" Jpn.J.Appl.Phys.36. 2621-2627 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] Akazawa.M.: "Annealing method for operating quantum-cellular-automaton systems" J.Appl.Phys.82. 5176-5184 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] Nan-Jian Wu et.al: "Quantum cellular Automaton Device Using the ingae charge Effect" Jpn.J.Appl.Phys.37(印刷中). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] Nan-Jian Wu: "Cellular-Automaton Circuits Using Single-Electro-Tunneling Junctions" Jpn. J. Appl. Phys. 36・5 (in press). (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] M.Akazawa: "Directional Single-Electron-Tunneling Junction" Jpn. J. Appl. Phys. 35・6. 3569-3575 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] Y.Amemiya: "Analog compuitation Using Ouantum Structure -A promising Computation Architecture for Ouantum Proce" IEICE Trans. Eleetronics. E79-11-C.11. 1481-1486 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] S.Uno: "0.86ev Platinum Schottky Buraier on Indium Phospbide by In-Situ Electrocheunicel Process and its application to MES FETS" Jpn. J. Appl. Phys. 35・2. 1258-1263 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] Nan-Jian Wu: "Charactolistics of schottky contaets on n-GaAs and n-Inp by a Novel In-Situ Eleetrochemical process" Special Iesue of Bulletion of the Research Institute of Electronic,Shizuok Uni.30・3. 227-237 (1996)

    • Related Report
      1996 Annual Research Report

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Published: 1996-04-01   Modified: 2016-04-21  

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