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Reserch of special properties of junction interface of semiconductive single grainboundary.

Research Project

Project/Area Number 08650779
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Inorganic materials/Physical properties
Research InstitutionTokyo Institute of Technology

Principal Investigator

SAKURAI Osamu  Tokyo Institute of Technology Fuculty of Engineering, Technician, 工学部, 教務職員 (20108195)

Co-Investigator(Kenkyū-buntansha) SHINOZAKI Kazuo  Tokyo Institute of Technology Fuculty of Engineering, Associate Professor, 工学部, 助教授 (00196388)
Project Period (FY) 1996 – 1997
Project Status Completed (Fiscal Year 1997)
Budget Amount *help
¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 1997: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 1996: ¥1,400,000 (Direct Cost: ¥1,400,000)
Keywordsbicrystals / single crystal / Non-linear I-V characteristics / Electrical properties of grainboundary
Research Abstract

La0.3mol%doped BaxSr1-xTiO_3 single crystal was grown by Floating zone method (Xe arcimage and Harogen ramp). The single crystal of which x value were 0,0.05,0.10 could be grown by using of Floating zone method. This condition of growth was noted. The growth rate (feeding speed) was 1.7cm/hr, and its atmosphere was air which flow rate was 0.51/min. The sizes of single crystal was almost 3mm phi and the color was dark blue. So at first, wecan find out that this crystal was reduced strongly. The value of x except this range colud not be grown by this same method. In this range, grown crystal had light blue color and the surface condition was dull. This growth direction was (001), (210), (111) respectively.
Microstructure and electrical properties of La-doped semiconductive SrTiO_3 bicrystals were investigated. SrTiO_3 bicrystals having several kinds of twisted angle were prepared by hot pressing at 1662oC,0.1MPa for 5h in air. Angular shaped boundary layrs were observed between the crystals. Many closed pores were observed at the center of boundary layrs, and open pores were observed at the edge of boundary layrs. Non-linear I-V characteristics across the junction of the bicrystals were measured on as prepared samples. The non-linear coefficient of the sample was relatively larger than that of a simple junction without boundary layrs. The I-V characteristics of bicrystals could be changed from non-linear to linear by heating the sample in an H_2-N_2 mixed gas atmosphere. Furthermore, by heating in an O_2 atmosphere the linear I-V characteristics of the samples reversed to non-linear.

Report

(3 results)
  • 1997 Annual Research Report   Final Research Report Summary
  • 1996 Annual Research Report
  • Research Products

    (9 results)

All Other

All Publications (9 results)

  • [Publications] 桜井 修, 篠崎 一夫, 水谷 惟恭: "半導性SrTiO_3単結晶接合界面の微構造と酸化還元処理によるI-V特性の変化" 日本セラミックス協会学術論文誌. 106. 308-311 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.Yonetsu, O.Sakurai, K.Shinozaki and N.Mizutani: "The relation between the Microstructure,the Orientation and the Electrical Properties of Al-doped ZnO thin Film deposited on the Various Kinds of Substratys by MOCVD" Trans.MRS-J. 20. 518-521 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] D.Nagano, O.Sakurai, K.Shinozaki and N.Mizutani: "Preparation of Semiconductive SrTiO_3 Thin Film by Metal-organic Chemical Vapor Deposition and their Electrical Properties" J.Mater.Res.12[6]. 1655-1660 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Osamu Sakurai, Masaru Soeda, Atsushi Saiki, Kazuo Shinozaki and Nobuyasu Mizutani: "Microstructure of junction interface of semiconductive SrTiO_3 single crystals and change of I-V characteristics by oxidation/reduction." Jurnal of the Ceramic Soc.Japan. 106. 308-311 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.Yonetsu, O.Sakurai, K.Shinozaki and N.Mizutani: "The relation between the Microstructure, the Orientation and the Electrical Properties of Al-doped ZnO thin Film deposited on the Various Kinds of Substratys by MOCVD" Trans.MRS-J. 20. 518-521 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] D.Nagano, O.Sakurai K.Shinozaki and N.Mizutani: "Preparation of Semiconductive SrTiO3 Thin Film by Metal-organic Chemical Vapor Deposition and their Electrical Properties" J.Mater.Res.12. 1655-1660 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] 桜井修, 篠崎一夫, 水谷惟恭: "半導体SrTiO_3単結晶接合界面の微構造と酸化還元処理によるI-V特性の変化" 日本セラミックス協会学術論文誌. (印刷中). (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] M.Yonetsu, O.Sakurai, K.Shinozaki and N.Mizutani: "The relation between the Microstructure,the Orientation and the Electrical Properties of Al-doped ZnO thin Film deposited on the Various Kinds of Substratys by MOCVD" Trans.MRS-J. 20. 518-521 (1996)

    • Related Report
      1997 Annual Research Report
  • [Publications] D.Nagano, O.Sakurai, K.Shinozaki and N.Mizutani: "Preparation of Semiconductive SrTiO_3 Thin Film by Metal-organic Chemical Vapor Deposition and their Electrical Properties" J.Mater.Res.12[6]. 1655-1660 (1997)

    • Related Report
      1997 Annual Research Report

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Published: 1996-04-01   Modified: 2016-04-21  

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