| Project/Area Number |
09044123
|
|---|
| Research Category |
Grant-in-Aid for international Scientific Research
|
| Allocation Type | Single-year Grants |
|---|
| Section | Joint Research |
|---|
| Research Field |
Inorganic materials/Physical properties
|
|---|
| Research Institution | INSTITUTE FOR MATERIALS RESEARCH,TOHOKU UNIVERSITY |
|---|
Principal Investigator |
FUKUDA Tsuguo TOHOKU UNIV., IMR,PROFESSOR, 金属材料研究所, 教授 (30199236)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
GANSCHOW Steffen IKZ,GERMANY,RESEARCHER, 結晶成長研究所, 研究員
EPELBAUM Boris IKZ,GERMANY,RESEARCHER, 結晶成長研究所, 研究員
SCHRODER Winfried IKZ,GERMANY,DIRECTOR, 結晶成長研究所, 所長
MULLER Georg ERLANGEN-NURMBERG UNIV., PROFESSOR, ErlangenーNurmberg大学, 教授
SHIMAMURA Kiyoshi TOHOKU UNIV., IMR,RESEARCH ASSOCIATE, 金属材料研究所, 助手 (90271965)
BOECK Torste ドイツ, 結晶成長研究所, 研究員
PROKESCH Mic ドイツ, 結晶成長研究所, 研究員
KLIMM Detlef ドイツ, 結晶成長研究所, 研究員
|
|---|
| Project Period (FY) |
1997 – 1998
|
| Project Status |
Completed (Fiscal Year 1998)
|
| Budget Amount *help |
¥7,600,000 (Direct Cost: ¥7,600,000)
Fiscal Year 1998: ¥3,800,000 (Direct Cost: ¥3,800,000)
Fiscal Year 1997: ¥3,800,000 (Direct Cost: ¥3,800,000)
|
|---|
| Keywords | crystal growth / bulk single crystal / heat and mass transport phenomena / fluoride single crystal / oxide single crystal / distribution phenomena / semiconductor single crystal / dislocation |
|---|
| Research Abstract |
Following the recent progress of technology, crystal materials with better quality and improved properties are strongly demanded. In order to realize technological break-throughs in this area, understanding of several phenomena relating to the crystal growth process, especially mass and heat transport phenomena, is most important. In this work, the investigation of heat and mass transport phenomena, and the pursuit of means to control them, have been carried out.
The following topics have been mainly investigated by exchanging researchers between Japan and Germany.
・ heat and mass transport phenomena accompanied with semiconductor crystal growth by the LEC, MCZ and FZ technique,
・ distribution of impurities and dopants during the growth of oxide and fluoride single crystals,
In all, 6 researchers from Japan visited Germany and 7 researchers from Germany visited Japan over the two years of exchanges.
One of the most successful results was the growth of fluoride single crystals and the development of the needed crystal growth technology. Although the growth of fluorides has been recognized as difficult because of the use of highly toxic HF gases, we have successfully grown a series of high-quality Corquillite-type crystals, such as Ce : LiSAF and Ce : LiSAF.Grown Ce : LiCAF crystals showed 60 mJ laser output energy in the UV wavelength region. This is the highest power ever reported.
By this international collaboration, we have successfully established stronger international relations for research. This led us to hold the "Japan-Germany Meeting for Crystal Growth" in the beginning of 1998. Since this meeting was well-received, the 2nd meeting including Poland is now being planned for the beginning of 1999.
This research work also allowed us to invite Prof.Peter Rudolph, IKZ, and Dr.Boris Epelbaum, IKZ, as visiting professor and visiting associate professor, respectively, at the Institute for Materials Research, Tohoku University, each for 3 months.
|
