| Project/Area Number |
09045063
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| Research Category |
Grant-in-Aid for international Scientific Research
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| Allocation Type | Single-year Grants |
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| Section | University-to-University Cooperative Research |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kumamoto National College of Technology |
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Principal Investigator |
OHYAMA Hidenori Kumamoto National College of Technology , Department of Electronic Engineering , Associate Professor, 電子工学科, 助教授 (80152271)
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| Co-Investigator(Kenkyū-buntansha) |
HAKATA Tetsuya Department of Electronic Control, 電子制御工学科, 助手 (60237899)
KUDOU Tomohiro Department of Information and Communication Engineering, Associate Researcher, 情報通信工学科, 助手 (90225160)
HAYAMA Kiyoteru Kumamoto National College of Technology, Department of Electronic Engineering, Lecture, 電子工学科, 講師 (00238148)
SIMOEN Eddy Interuniversity Micro Electronics Center, Senior Reseacher, 主任研究員
CLAEYS Cor Interuniversity Micro Electronics Center, Professor, 教授
SIMONE Eddy IMEC, 主任研究員
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| Project Period (FY) |
1997 – 1998
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| Project Status |
Completed (Fiscal Year 1998)
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| Budget Amount *help |
¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 1998: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 1997: ¥1,400,000 (Direct Cost: ¥1,400,000)
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| Keywords | Radiation damage / High energy particle / SiGe hetero device / InGaAs HEMT / Degradation / Induced lattice defects / Recovery by annealing / HEMT |
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| Research Abstract |
In these days when the use of nuclear reactors , high-energy particle accelerators and artificial satellites expands , the development of semiconductor devices , which can normally operate in a radiation-rich environment , is extensively taking place everywhere . In the project , the degradation devices , subjected to 1-MeV electrons , 1-MeV fast neutrons , 20-MeV protons and 20-MeV alpha rays , were investigated as a function of fluence and radiation source .
The main conclusions which can be made from the research project :
The degradation of the electrical performance of SiィイD21-xィエD2GeィイD2xィエD2 devices increases with increasing radiation fluence , while it decreases with increases germanium content .
After irradiation , electron capture levels are observed in SiィイD21-xィエD2GeィイD2xィエD2 epitaxial layers which are probably related with a boron interstitial complex . The electron capture levels , which act as generation-recombination center , are mainly responsible for the degradation of device performance .
The electron capture levels induced in Si-doped InィイD20.49ィエD2GeィイD20.51ィエD2 P donor layer of InGaAs HEMT (High Electron Mobility Transistor) are thought to be mainly responsible for the decrease of the drain current and effective mobility due to the donor removal .
The damage coefficient for proton irradiation is nearly the same as for neutron irradiation and is about three orders of magnitude larger than for electron irradiation . This difference is due to the different number of knock=on atoms , which is correlated with the differences of mass and the possibility of nuclear collisions for the formations of lattice defects .
The degraded performance and induced deep levels recover by thermal annealing .
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