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ナノクリスタルドープ光導波路及び次世代フォトニックデバイスへの適用

Research Project

Project/Area Number 09305021
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionWaseda University

Principal Investigator

KATO Isamu  Waseda University, School of Science and Engineering, Professor, 理工学部, 教授 (80063775)

Co-Investigator(Kenkyū-buntansha) UTAKA Katsuyuki  Waseda University, School of Science and Engineering, Professor, 理工学部, 教授 (20277817)
Project Period (FY) 1997 – 2000
Project Status Completed (Fiscal Year 2001)
Budget Amount *help
¥35,100,000 (Direct Cost: ¥35,100,000)
Fiscal Year 2000: ¥1,900,000 (Direct Cost: ¥1,900,000)
Fiscal Year 1999: ¥7,700,000 (Direct Cost: ¥7,700,000)
Fiscal Year 1998: ¥12,300,000 (Direct Cost: ¥12,300,000)
Fiscal Year 1997: ¥13,200,000 (Direct Cost: ¥13,200,000)
KeywordsMicrowave Plasma CVD / Silicon Nano Crystal / Multilayer Films / Luminescent Material / Optical Waveguides Type Filter / MBE / semiconductor nanocrystal / wavelength converter / 分子線エピタキシャル成長法 / 半導体光機能デバイス / InAs / 水素化アモルファスシリコン / 窒化シリコン / 分子線セル / ヒ化ガリウム / フォトニック結晶 / アモルファスシリコン / Siナノクリスタル / プラズマエレクトロニクス / 二重同軸線路型MPCVD / 化合物半導体ナノクリスタル / 光非線形 / 光増幅素子
Research Abstract

We fabricate silicon nano crystal (nc-Si) using Double Tubed Coaxial Line Type Microwave Plasma Chemical Vapor Deposition (MPCVD) and evaluate its photo luminescence characteristics varying fabrication conditions. Furthermore, although it was thought that the ion bombard energy was related to creation of Si nano crystal, this was clarified by analyzing creation process. And we clarify the validity of analysis by calculating the number of Si nano crystals.
On the other hand, a new silicons photonic materials is aimed at, we fabricate a-Si : H/Si3N4 multilayer films which consists of a-Si : H and Si_3N_4 and evaluate its film quality. A theoretical curve and an experiment value of optical band gap of multilayer films were agreeing well, and we can fabricate the multilayer films of good quality. And this is processed into slab waveguides. As a result, this waveguides have polarization properties, TE-mode-cut and TM-mode-pass. And when intensity of pumping lights increase, the extinction ratio rises.
Fundamental studies for realizing high quality compound semiconductor nanocrystals with which are in high-density and precisely position-controlled have been carried out. Nano-oder dips with 300nm diameter and 2-nm depth were formed on GaAs substrates by using electron beam exposure (EBX) method, and InAs was grown on them by molecular beam epitaxy (MBE) method. As a result, position-controlled nanocrystals of 25nm height with ring shapes associated with those dips were successfully fabricated, and room-temperature PL was measured. Also possibility for stacked structure was clarified. In parallel, photonic functional devices which the nanocrysrtals will be utilized for higher device performances were investigated to have realized foperations of multimode interference wavelength converters and photonic switches, and fundamental issues for the device application were solved.

Report

(5 results)
  • 2001 Final Research Report Summary
  • 2000 Annual Research Report
  • 1999 Annual Research Report
  • 1998 Annual Research Report
  • 1997 Annual Research Report
  • Research Products

    (34 results)

All Other

All Publications (34 results)

  • [Publications] 加藤勇 他: "2重管式同軸線路形MPCVD装置を用いて作製したa-Si : H/Si_3N_4多層膜の膜質とその光回路素子への応用"電子情報通信学会論文誌 C. Vol.J84-C. 245-250 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] I.Kato et al.: "Effect of Ar^+ Ion Bombardment During Hydrogenated Amorphous Silicon Film Growth in Plasma Chemical Vapor Deposition System"Jpn.J.Appl.Phys.. 39. 6404-6409 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 加藤勇 他: "Dependence of PL Characteristics of a-Si : H Nanoball Films Fabricated By Double Tubed Coaxial Line Type MPCVD System On Substrate Position"第18回プラズマプロセッシング研究会 プロシーディングス. 425-426 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 宇高勝之 他: "ナノ加工基板上へのMBE成長のための基礎検討"第61回応用物理学会学術講演会. (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K.Utaka, et al.: "Novel wavelength converter using multi-mode interference semiconductor optical amplifier (MIWC)"25th European Conference on Optical Communication. (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K.Utaka, et al.: "Proposal of versatile multi-mode interference photonic switches with partial-index modulation regions (MIPS-P)"Electronics Letters. 36-6. 533-534 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] I. Kato et al.: "Quality of a-Si : H/Si_3N_4 Multilayer Films Fabricated by Double Tubed Coaxial Line Type MPCVD System and Application of the Films to Optical Circuit Element"Denshi Job Tsushin Gakkai Ronbunshi. Vol. J84-C No. 4. 245-250 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] I. Kato et al.: "Effect of Ar^+ Ion Bombardment During Hydrogeneted Amorphous Silicon Film Growth in Plasma Chemical Vapor Deposition System"Jpn. J. Appl. Phys.. Vol. 39. 6404-6409 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] I. Kato et al.: "Dependence of PL Characteristics of a-Si : H Nanoball Films Fabricated By Double Tubed Coaxial Line Type MPCVD System On Substrate Position"Proceedings of The 18th Synposium on Plasma Processing. 425-426 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Utaka, et al.: ""Fundamental study on MBE growth on nano-oder patterned substrates""61th Fall National Meeting of JSAP. 5a-ZA-5. (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Utaka, et al.: ""Novel wavelength converter using multi-mode interference semiconductor optical amplifier (MIWC)""25th European Conference on Optical Communication (ECOC 99). 215. (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Utaka, et al.: ""Proposal of versatilemulti-mode interference photonic switches with partial-index modulation regions (MIPS-P)""Electronics Letters. 36-6. 533-534 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] I.Kato et al.: "Effect of Ar^+Ion Bombardment During Hydrogenated Amorphous Silicon Film Growth in Plasma Chemical Vapor Deposition"Jpn.J.Appl.Phys.. 39. 6404-6409 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 加藤勇 他: "2重管式同軸線路形MPCVD装置を用いて作製したa-Si:H/Si3N4多層膜の膜質とその光回路素子への応"電子情報通信学会論文誌C. Vol.J84-C No.4(発表予定). 1-6 (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] 松本貴之,加藤勇: "Dependence of PL Characteristlcs of a-Si : H Nanoball Films Fabricated By Double Tubed Coaxial Line Type MPCVD System On Substrate Position"第18回プラズマプロセッシング研究会 プロシーデイングス. 425-426 (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] 宇高勝之 他: "ナノ加工基板上へのMBE成長のための基礎検討"第61回応用物理学会学術講演会. 5a-ZA-5 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 宇高勝之 他: "MMI導波路及びSOAを利用したマルチビーム半導体光源の基礎検討"第48回応用物理学関連連合講演会. 30a-ZS-10 (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] 宇高勝之 他: "アドレス識別を指向した全光型半導体フォトニックデバイス"第48回応用物理学関連連合講演会. 28p-YF-13 (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] 加藤 勇: "Photoluminescennce from a-SFH Nanoball Films Fabricated by Double Tubed Coaxial Line Type Microwave Plasma CVD System"Proceedings of the Tenth International Workshop on the Phisics of Semiconductor Devices. II. 1107 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] 加藤 勇: "QUORITY OF a Si:H/Si_3N_4 MULTILAYER FILMS FABRICATED BY DOUBLE TUBED COAXIAL LINE TYPE MPCVD SYSTEM"第17回プラズマプロセッシング研究会プロシ-ディングス. A2・5. 239-242 (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] 加藤 勇: "Fabrication of a-Si:H Film Using H_2/SiH_4 Plasma by Longitudinal Magnetic Field Applied MPCVD System (II)"第17回プラズマプロセッシング研究会プロシ-ディングス. P1-21. 141-144 (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] K.Utaka,et al.: "Proposal of versatile multimode interference photonic switches with partial index modulation regions (MIPS-P)"Electronics Letters,. (発表予定). (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] K.Utaka,et al.: "Novel wavelength converter using multi modeinterferonce semiconductor optical amphifier (MIWC)"25th European Conference on Optical Communication (ECOC'99). 2-15 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] K.Utaka,et al.: "New structure of multi mode interference photonicswitches with partial index-modulation regions (MIPS-P)"5th Asin-Pacific Conference on Communications 4th Optoelectronies and Communications. C2S4. 469-470 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] I.Kato,et al.: "Stabilization of Ar plasma by appling longitudinal magnetic field" Electronics and Communications in Japan(Part2). 81・3. 10-16 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] I.Kato,et al.: "Phcto Luminescence from Si Films Fabricated by Double Tubed Coaxral Line Type Microwave Plasme CVD Apparatus" 4th Int'l Conf.on Reactive Plasmas and 16th Symposium on Plasma Processing. 109-110 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 加藤 勇, 他: "縦磁界印加同軸線路形MPCVD装置においてH_2ガス流量がα-Si:H膜に与える影響" 第59回応用物理学会学術講演会. 15a-Q-3 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 加藤 勇, 他: "二重管式同軸線路形MPCVD装置を用いて作製したSi発先材料の研究(III)" 第59回応用物理学会学術講演会. 16p-ZE-16 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 加藤 勇, 他: "二重管式同軸線路形MPCVD装置によるa-Si:H/Si_3N_4多層膜の作製法の検討" 第46回応用物理学会関係連合講演会. (1999)

    • Related Report
      1998 Annual Research Report
  • [Publications] 宇高 勝之, 他: "ナノプリント法によるInP基板への回折格子形式" 第46回応用物理学会関係連合講演会. (1999)

    • Related Report
      1998 Annual Research Report
  • [Publications] 加藤 勇: "縦磁界印加によるArプラズマの安定化" 電子情報通信学会論文誌. 11. 378-383 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] 加藤 勇: "a-Si:H膜成長中のイオン衝撃効果" 第15回「プラズマプロセシング研究会」プロシ-ディングス. 15. 84-87 (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] 加藤 勇: "2重管式同軸線路型MPCVDを用いて作製したSi系発光材料" 第15回「プラズマプロセシング研究会」プロシ-ディングス. 15. 140-143 (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] 加藤 勇: "縦磁界印加MPCVDによるH_2/SiH_4プラズマを用いたa-Si:H膜の作製" 第15回「プラズマプロセシング研究会」プロシ-ディングス. 15. 406-409 (1998)

    • Related Report
      1997 Annual Research Report

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Published: 1997-04-01   Modified: 2016-04-21  

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