| Project/Area Number |
09355001
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | The University of Tokyo |
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Principal Investigator |
SHIRAKI Yasuhiro RCAST,The University of Tokyo, Professor, 先端科学技術研究センター, 教授 (00206286)
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| Co-Investigator(Kenkyū-buntansha) |
NAKAGAWA Kiyokazu Hitachi Central Research Laboratory, 中央研究所, 主任研究員
USAMI Noritaka RCAST,The University of Tokyo, Research Associate, 先端科学技術研究センター, 助手 (20262107)
OSADA Toshihito ISSP,The University of Tokyo, Associate Professor, 物性研究所, 助教授 (00192526)
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| Project Period (FY) |
1997 – 1998
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| Project Status |
Completed (Fiscal Year 1998)
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| Budget Amount *help |
¥30,800,000 (Direct Cost: ¥30,800,000)
Fiscal Year 1998: ¥7,000,000 (Direct Cost: ¥7,000,000)
Fiscal Year 1997: ¥23,800,000 (Direct Cost: ¥23,800,000)
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| Keywords | SiGe / neighboring confinement structure / quantum dots / selective epitaxy / イオン注入 / 変調ドープ構造 / 界面ラフネス散乱 / 不純物散乱 / SiGeの混晶 / 量子細線 / Si(311)面 / ガスソース分子線エピタキシ- / Stranski-Krastanow成長様式 |
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| Research Abstract |
Various semiconductor superstructures based on group-IV semiconductors have been investigated. Neighboring Confinement Structures, which consist of adjacent quantum wet Is that separately confine electrons and holes, were grown on strain-relaxed SiGe, and great enhancement of no-phonon transitions was observed. We also grew Ge quantum dots on Si by utilizing the Stranski-Krastanow growth mode, and intense photoluminescence was observed due to the efficient carrier confinement. Precise control of the size and the position of Ge dots was achieved by combining gas-source selective epitaxy and electron beam lithography. Very high mobilities were realized both in electrons and holes by using strained-Si channel on relaxed-SiGe and pure-Gechannel, respectively.
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