Project/Area Number |
09440123
|
Research Category |
Grant-in-Aid for Scientific Research (B).
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
固体物性Ⅰ(光物性・半導体・誘電体)
|
Research Institution | KWANSEI GAKUIN UNIVERSITY |
Principal Investigator |
TERAUCHI Hikaru SCHOOL OF SCIENCE, DEPERTMENT OF PHYSICS, KWANSEI GAKUIN UNIVERSITY PROFESSOR, 理学部, 教授 (00079667)
|
Co-Investigator(Kenkyū-buntansha) |
TAHAKASHI Isao SCHOOL OF SCIENCE, DEPARATMENT OF PHYSICS, KWANSEI GAKUIN UNIVERSITY ASSISTANT PROFESSOR, 理学部, 助教授 (10212010)
|
Project Period (FY) |
1997 – 2000
|
Project Status |
Completed (Fiscal Year 2000)
|
Budget Amount *help |
¥14,000,000 (Direct Cost: ¥14,000,000)
Fiscal Year 2000: ¥1,600,000 (Direct Cost: ¥1,600,000)
Fiscal Year 1999: ¥1,600,000 (Direct Cost: ¥1,600,000)
Fiscal Year 1998: ¥3,700,000 (Direct Cost: ¥3,700,000)
Fiscal Year 1997: ¥7,100,000 (Direct Cost: ¥7,100,000)
|
Keywords | FERROELECTRIC MATERIALS / RELAXOR / STRUCTURAL PHASE TRANSITION / X-RAY DIFFRACTION / DIELECTRIC CONSTANT / 誘電体 / 散漫相転移 / 薄膜 / クラスター / Pb(IN Nb)O_3 / X線 / ガラス / マイクロクラスター / 相転移 / 圧力効果 / relaxor / PIN / X-ray diffraction / dielectric permittivity / diffuse phase transition / glass phase transition / XAFS local structure |
Research Abstract |
X-ray diffraction studies were carried out in lead indium niobate. Pb(In_<1/2>Nb_<1/2>)O_3 (PIN) in order to investigate phase transitions of relaxor materials. The phase transitions in PIN crystals depended on the In/Nb arrangements on the B-sites (chemical ordering, S) in perovskite structure. The ordered PIN (S=0.8), the partially ordered PIN (S=0.4) and the disordered PIN (S=0.2) showed the antiferroelectric phase transition, the ferroelectric phase transition and the glass-like phase transition, respectively. The phase transitions under pressure were also measured in the partially ordered PIN and the disordered PIN.With increasing applied pressure, the partially ordered PIN showed the transition to the ferroelectric phase. The pressure-induced phase transitions were explained by the random-field Potts model.
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