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Study of interstitial Si atoms in Si annealed and quenched in H_2 gas

Research Project

Project/Area Number 09450004
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionTohoku University

Principal Investigator

SUEZAWA Masashj  Institute for Materials Research, Tohoku University Professor, 金属材料研究所, 教授 (00005919)

Project Period (FY) 1997 – 1998
Project Status Completed (Fiscal Year 1998)
Budget Amount *help
¥5,000,000 (Direct Cost: ¥5,000,000)
Fiscal Year 1998: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 1997: ¥4,000,000 (Direct Cost: ¥4,000,000)
KeywordsSi / interstitial atom / hydrogen / complex / formation energy / quenching / electron-irradiation / 電子照射 / 格子間原子
Research Abstract

The aim of this project was to clarify the properties of interstitial Si atoms existed at high temperature in Si crystals. We measured optical absorption spectra of three kinds of crystals.
The first crystals were grown in H_2 gas. Many sharp peaks such as 2223 cm^<-1> peak were observed only when the crystal was doped with C or B, both of which have smaller covalent radii than that of Si. This result supports a hypothesis that those optical absorption peaks are due to complexes of H and interstitial Si atoms since crystals doped with such impurities have been known to include high density of interstitial Si atoms.
The second crystals were Au-doped Si annealed and quenched in H^2 gas. We succeeded to observe the 2223 cm^<-1> peak in this crystal. This also supports the above hypothesis that interstitial Si atoms included in the complex responsible for this peak since the concentration of interstitial Si atoms is known to be high in Au-doped Si. The formation energy of interstitial Si atom in Au-doped Si was determined to be about 2.1 eV.
The third crystal was electron-irradiated Si doped with H.We observed the 2223 cm^<-1> peak in these crystals. This is the first evidence to directly show the existence of interstitial Si in electron-irradiated Si.

Report

(3 results)
  • 1998 Annual Research Report   Final Research Report Summary
  • 1997 Annual Research Report
  • Research Products

    (22 results)

All Other

All Publications (22 results)

  • [Publications] M.Suezawa: "Optical absorption study of Si grown in a hydrogen ambient" J.Appl.Phyo.83,4. 1958-1961 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] M.Suezawa: "Formation energy of interstitial Si in Au-doped Si determined by optical absorption measurments of H bound to interstitial Si" Jpn.J.Appl.Phys.37,3A. L259-L261 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] M.Suezawa: "Self-interstitial in electron-irradiated Si detected by optical absorption due to hydrogen bound to it" Jpn.J.Appl.Phys.37,7A. L806-L808 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] M.Suezawa: "Optical absorption study of hydrogen in Zn-doped Si" Mat.Res.Soc.Symp.Proc.513. 357-362 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] M.Suezawa: "Formation energy of interstitial Si in Au-doped Si" Mat.Res.Soc.Symp.Proc.510. 15-20 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] H.Takahashi, N.Fukata, M.Suezawa, H.Yamada-Kaneta: "Optical absorption lines due to H2-related defects in Si" Phys.Stat.Sol.(b)210. 581-586 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] M.Suezawa: "Optical absorption study of Si grown in a hydrogen ambient" J.Appl.Phys.83,4. 1958-1961 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] M.Suezawa: "Formation energy of interstitial Si in Au-doped Si determined by optical absorption measurements of H bound to interstitial Si" Jpn.J.Appl.Phys.37,3A. L259-L261 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] M.Suezawa: "Self-interstitial in electron-irradiated Si detected by optical absorption due to hydrogen bound to it" Jpn.J.Appl.Phys.37,7A. L806-L808 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] M.Suezawa: "Optical absorption study of hydrogen in Zn-doped Si" Mat.Res.Soc.Symp.Proc.513. 357-362 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Masashi Suezawa: "Formation energy of interstitial Si in Au-doped Si" Mat.Res.Soc.Symp.Proc.510. 15-20 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] H.Takahashi, N.Fukata, M.Suezawa and H.Yamada-Kaneta: "Optical absorption lines due to H_2-related defects in Si" Phys.Stat.Sol., (b). 210. 581-586 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] M.Suezawa and R.Mori: "Optical absorption study of the interaction between group II acceptors and hydrogen in Si" Phys.Stat.Sol., (b). 210. 507-511 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] M.Suezawa: "Optical absorption study of Si grown in a hydrogen ambient" J.Appl.Phys.83,4. 1958-1961 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] M.Suezawa: "Formation energy of interstitial Si in Au-doped Si determined by optical absorption measurements of H bound to interstitial Si" Jpn.J.Appl.Phys.37,3A. L259-L261 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] M.Suezawa: "Self-interstitial in electron-irradiated Si detected by optical absorption due to hydrogen bound to it" Jpn.J.Appl.Phys.37,7A. L806-L808 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] M.Suezawa: "Optical absorption study of hydrogen in Zn-doped Si" Mat.Res.Soc.Symp.Proc.513. 357-362 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] Masashi Suezawa: "Formation energy of interstitial Si in Au-doped Si" Mat.Res.Soc.Symp.Proc.510. 15-20 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] H.Takahashi,N.Fukata,M.Suezawa H.Yamada-Kaneta: "Optical absorption lines due to H_2-related defects in Si" Phys.Stat.Sol.(b)210. 581-586 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] Masashi Suezawa: "Point dedects at high temperature studied by the measurement of optical absorption spectra of Si" Proc.The Kzusa Akademia Park Forum. 116-123 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] Masashi Suezawa: "Optical absorption study of Si grown in a hydrogen ambient" Journal of Applied Physics. 83,4. 1958-1961 (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] Masashi Suezawa: "Formation energy of interstitial Si in Au-doped Si determined by optical absorption measurements of H bound to interstitial Si" Japanese Journal of Applied Physics. 37,3A. L259-L261 (1998)

    • Related Report
      1997 Annual Research Report

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Published: 1997-04-01   Modified: 2016-04-21  

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