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Fracture mechanism of LSI conductor due to atom migration induced by electri current and stress

Research Project

Project/Area Number 09450049
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Materials/Mechanics of materials
Research InstitutionKYOTO UNIVERSITY

Principal Investigator

KITAMURA Takayuki  KYOTO UNIVERSITY,Graduate School of Engineering Professor, 工学研究科, 教授 (20169882)

Co-Investigator(Kenkyū-buntansha) TADA Naoya  KYOTO UNIVERSITY,Graduate School of Engineering, Research Associat, 工学研究科, 助手 (70243053)
OHTANI Ryuichi  KYOTO UNIVERSITY,Graduate School of Engineering Professor, 工学研究科, 教授 (50025946)
Project Period (FY) 1997 – 1998
Project Status Completed (Fiscal Year 1998)
Budget Amount *help
¥9,300,000 (Direct Cost: ¥9,300,000)
Fiscal Year 1998: ¥4,200,000 (Direct Cost: ¥4,200,000)
Fiscal Year 1997: ¥5,100,000 (Direct Cost: ¥5,100,000)
KeywordsLSI conductor / Atom migration / Electric current / Stress / Cavity / Numerical simulation / Polycrystalline / FEM / エレクトロマイグレーション / ストレスマイグレーション / 破壊機構 / 拡散 / 信頼性
Research Abstract

It is well known that, atoms are transported by thermal stress as well as electric current in an LSI conductor. The interacted migration brings about cavities and the failure of conductor takes place by their growth. The results obtained from this study is summarized as follows. (1) An FEM of diffusion along grain boundaries is developed in order to analyze the cavity growth under the stress-induced migration. The simulation reveals that the diffusion along the interface between the conductor and the insulator strongly affects the atom flow and change the growth rate of cavity. (2) The movement of cavity is analyzed on the basis of atom migration along the surface due to electric current. (3) The analyzing method of cavity growth under interacted migration is discussed on the basis of the results (I) and (2). The method is implanted to the advanced FEM (1), which allows us to analyze the cavity growth in a polycrystalline conductor under the interaction. (4) The cavity grows little under migration induced by only electric current. However, it brings about the stress distribution along the grain boundaries near the cavity and the cavity growth is governed by the atom migration due to the stress gradient.

Report

(3 results)
  • 1998 Annual Research Report   Final Research Report Summary
  • 1997 Annual Research Report
  • Research Products

    (18 results)

All Other

All Publications (18 results)

  • [Publications] Takayuki Kitamura: "Molecular Dynamics Simulation on Grain Boundary Diffusion in Aluminum under Hydrostatic Stress" JSME International Journal. 41-1. 10-15 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] 北村隆行: "体拡散クリープ下の粒界キャビティ成長の数値解析" 日本機械学会論文集. 64-618. 373-378 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Tadahiro Shibutani: "Creep Cavity Growth under Interaction between Lattice Diffusion and Grain Boundary Diffusion" Metallurgical and Materials Transaction. 29A. 2533-2542 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Takayuki Kitamura: "Numerical Simulation on Cavity Growth under Interaction between Interface Diffusion and Lattice Diffusion in a LSI Conductor" The 4^<th> International Workshop on Stress Induced Phenomena in Metallization. 341-346 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] 澁谷忠弘: "粒界ネットワークを有するLSI配線の電流と応力による競合下のマイグレーション解析法" LSI配線における原子輸送・応力問題第4回研究会予稿集. 33-34 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Takayuki Kitamura etal.: "Molecular Dynamics Simulation on Grain Boundary・Diffusion in Aluminum under Hydrostatic Stress" JSME International Journal. 41-1. 10-15 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Takayuki Kitamura et al.: "Numerical Analysis on Growth of Grain Boundary Cavity under Lattice Diffusion Creep" Trans.JSME,Ser.A. 64-618. 373-378 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Tadahiro Shibutani, Takayuki Kitamura et al.: "Creep Cavity Growth under Interaction between Lattice Diffusion and Grain Boundary Diffusion" Metallurgical and Materials Transaction. 29A. 2533-2542 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Takayuki Kitamura et al.: "Numerical Simulation on Cavity Growth under Interaction between Interface Diffusion and Lattice Diffusion in a LSI Conductor" The 4^<th> International Workshop on Stress Induced Phenomena in Metallization. 341-346 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Tadahiro Shibutani, Takayuki Kitamura et.al: "Fracture of LSI conductor with Grain Boundary Network under Migration Induced by Electric Current and Stress" Preprint of 4^<th> National Symposium on Atom Migration in LSI Conductor. 33-34 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Takayuki Kitamura: "Molecular Dynamics Simulation on Grain Boundary Diffusion in Aluminum under Hydrostatic Stress" JSME International Journal. 41-1. 10-15 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 北村隆行: "体拡散クリープ下の粒界キャビティ成長の数値解析" 日本機械学会論文集. 64-618. 373-378 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] Tadahiro Shibutani: "Creep Cavity Growth under Interaction between Lattice Diffusion and Grain Boundary Diffusion" Metallurgical and Materials Transaction. 29A. 2533-2542 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] Takayuki Kitamura: "Numerical Simulation on Cavity Growth under Interaction between Interface Diffusion and Lattice Diffusion in a LSI Conductor" The 4^<th> International Workshop on Stress Induced Phenomena in Metallization. 341-346 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 澁谷忠弘: "粒界ネットワークを有するLSI配線の電流と応力による競合下のマイグレーション解析法" LSI配線における原子輸送・応力問題第4回研究会予稿集. 33-34 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] Takayuki Kitamura: "Molecular Dynamics Simulation on Grain Boundary Diffusion in Aluminum under Hydrostatic Stress" JSME International Journal,Ser.A. 41・1. 10-15 (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] 北村隆行: "体拡散クリープ下の粒界キャビティ成長の数値解析" 日本機械学会論文集,A編. 64・618. 373-378 (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] Takayuki Kitamura: "Numerical Simulation on Cavity Growth under Interaction between Interface Diffusion and Lattice Diffusion in a LSI Conductor" Stress Induced Phenomena in Metallization,American Institute of Physics. 418. 341-346 (1998)

    • Related Report
      1997 Annual Research Report

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Published: 1997-04-01   Modified: 2016-04-21  

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