| Project/Area Number |
09450119
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | HOKKAIDO UNIVERSITY |
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Principal Investigator |
SUEMUNE Ikuo Hokkaido Univ., Res. Inst. For Elect. Sci., Prof., 電子科学研究所, 教授 (00112178)
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| Co-Investigator(Kenkyū-buntansha) |
UESUGI Katsuhiro Hokkaido Univ., Res. Inst, for Elect. Sci., Res. Associate, 電子科学研究所, 助手 (70261352)
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| Project Period (FY) |
1997 – 1999
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| Project Status |
Completed (Fiscal Year 1999)
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| Budget Amount *help |
¥14,100,000 (Direct Cost: ¥14,100,000)
Fiscal Year 1999: ¥4,000,000 (Direct Cost: ¥4,000,000)
Fiscal Year 1998: ¥3,900,000 (Direct Cost: ¥3,900,000)
Fiscal Year 1997: ¥6,200,000 (Direct Cost: ¥6,200,000)
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| Keywords | blue semiconductor lasers / quantum dots / blue-shift / nanolithography / AFM / selective growth / MOMBE / MOVPE |
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| Research Abstract |
The special type of the density of states in quantum dots and wires are expected to have the capability to improve the performance of semiconductor lasers. The researches toward this direction are now mainly promoted on the infrared InGaAS systems. However for the applications such as the high-density optical information processing and storage and also for increasing the absorption coefficient of Silicon photodetectors to have small integrated photonic devices in optoelectronic integrated circuits, visible and especially short wavelength semiconductor lasers with high performance and high efficiency are necessary. Excitons and excitonic molecules confined in quantum dots are predicted to have the large oscillator strength or large optical gain. Therefore if such a situation is prepared with wide bandgap semiconductors with their large exciton binding energies, the possibility to realize such a high-performance short wavelength lasers will be high.
In this project, CdSe, ZnSe, CdS wide b
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andgapsemiconductor quantum dots were studied. The instability due to the Ostwald ripening in CdSe dots, much higher stability in ZnSe and CdS quantum dots, the blue shift of the light emission in ZnSe quantum dots due to the quantum confinement effect, the study of the type II band lineup in CdS/ZnSe heterostructures, the role of the energy conservation in the energy relaxation processes in the CdS quantum dots during the longitudinal optical phonon emission were studied. It was also shown that CdS/ZnMgCdS heterostructures are type I and this will prove to be effective to have the higher luminescence efficiency. For the purpose of realizing the strong coupling between the quantum dots and the optical field, AFM nanolithography was developed and the fabrication of quantum dot array with the period of 100nm could be fabricated. The stimulated emission based on these structures are now under study, but the stimulated emission in doped GaN was observed in the ultra-violet wavelength region. Less
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