| Project/Area Number |
09450125
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Japan Advanced Institute of Science and Technology |
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Principal Investigator |
HORITA Susumu Japan Advanced Institute of Science and Technology, Hokuriku, the school of Materials Science, Associate Professor, 材料科学研究科, 助教授 (60199552)
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| Co-Investigator(Kenkyū-buntansha) |
MASUDA Astushi Japan Advanced Institute of Science and Technology, Hokuriku, the school of Mate, 材料科学研究科, 助手 (30283154)
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| Project Period (FY) |
1997 – 1998
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| Project Status |
Completed (Fiscal Year 1998)
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| Budget Amount *help |
¥6,800,000 (Direct Cost: ¥6,800,000)
Fiscal Year 1998: ¥1,700,000 (Direct Cost: ¥1,700,000)
Fiscal Year 1997: ¥5,100,000 (Direct Cost: ¥5,100,000)
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| Keywords | Yttria-Stabilized Zirconia / Silicon / Heteroepitaxial Growth / Reactive Sputtering / Sputtering / PZT / Ir / Ferroelectric Memory |
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| Research Abstract |
(1) We hardly observed the difference on the C-V characteristics of the epitaxial YSZ films on Si substrates deposited by reactive sputtering with the cooling rates of 0.1 to 1000K/s at 800ﾟC.However, the break down characteristics were good for the films produced with the cooling rates of 1 to 10 K/s.
(2) We observed that the stronger ion drift in the C-V characteristics of the epitaxial YSZ films on Si deposited with heavier plasma radiation.
(3) It was found that the PZT films on epitaxial YSZ films deposited at 460 and 470ﾟC were heteroepitaxial monoclinic (110) PZT films. The leakage current of the monoclinic PZT film step-annealed at 300, 325 and 3500 C was less than 1X10^<-7> A/cm^2. Its C-V characteristics showed the hysteresis loop due to the ferroelectric property.
(4) We obtained the heteroepitaxial Ir films on epitaxial (100) YSZ layers. When the deposition rates were later than 0.42 nm/min and faster than 1.2 nm/mm, the orientation of the deposited Ir films were (100) and (111), respectively, It was found that the surface crystalline quality of the epitaxial (100) Ir film was much better than that of the epitaxial YSZ film.
(5) We obtained the epitaxial (100) and (Ill) PZT films on the epitaxial (100) Ir film at 600ﾟC and the epitaxial (111) Ir film at 650ﾟC, respectively.
(6) When the degree of the (001) orientation of the epitaxial PZT film became stronger and the crystalline quality became better, the remanent polarization became larger and the leakage current became lower.
(7) We found that the Si oxide layer between the YSZ layer and the Si substrate made the dielectric constant of the buffer layer decrease. This Si oxide layer formation can be suppressed by controlling the Zr+Y metal film deposition process.
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