| Project/Area Number |
09450130
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka University |
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Principal Investigator |
HIYAMIZU Satoshi Osaka Univ. Grad. School of Eng.Sci., Professor, 基礎工学研究科, 教授 (50201728)
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| Co-Investigator(Kenkyū-buntansha) |
KITADA Takahiro Osaka Univ. Grad. School of Eng.Sci., Research Assoc., 基礎工学研究科, 助手 (90283738)
SHIMOMURA Satoshi Osaka Univ. Grad. School of Eng.Sci., Assoc. Prof., 基礎工学研究科, 助教授 (30201560)
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| Project Period (FY) |
1997 – 1998
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| Project Status |
Completed (Fiscal Year 1998)
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| Budget Amount *help |
¥13,800,000 (Direct Cost: ¥13,800,000)
Fiscal Year 1998: ¥3,400,000 (Direct Cost: ¥3,400,000)
Fiscal Year 1997: ¥10,400,000 (Direct Cost: ¥10,400,000)
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| Keywords | self-organized quantum wire / GaAs quantum wire / InGaAs quantum wire / MBE growth / (775)B GaAs substrate / (553)A GaAs substrate / (221)A GaAs substrate |
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| Research Abstract |
High-density and highly uniform GaAs/(GaAs)ィイD24ィエD2(AlAs)ィイD22ィエD2 self-organized quantum wires (QWRs) formed on (775)B GaAs substrates were applied to laser diodes (wavelength of 0.7 μm). Self-organized (775)B InGaAs/(GaAs)ィイD2mィエD2(AlAs)ィイD2nィエD2 pseudomorphic QWRs and InGaAs/InAlAs QWRs were fabricated for longer wavelength light emission.
1. High-density GaAs QWR lasers on the (775)B GaAs substrates
Graded-index separate-confinement heterostructure lasers with the high-density GaAs/(GaAs)ィイD24ィエD2(AlAsィイD2)2ィエD2 QWRs in an active region were fabricated on (775)B GaAs substrates. The (775)B QWR lasers showed laser oscillation at room temperature (20 ℃) under pulse current. The threshold current density was as low as 3 kA/cmィイD12ィエD1. This is the first report for self-organized QWR. Lasers fabricated with the use of naturally formed surface (or interface) corrugation, which indicates their excellent optical properties.
2. InィイD20.15GィエD2aィイD20.85ィエD2 As/GaAs QWRs grown on (553)A, and (221)A GaAs substrates
Surface corrugation with a period of 20 nm and a height of 1.5 nm of an InィイD20.15ィエD2GaィイD20.85ィエD2As layer grown on the (553)A and (221)A GaAs substrates was used to form QWRs. The emission peak wavelengths of the (553)A and (221)A In0.15Ga0.85As/GaAs QWRs were longer than 860 nm. A full width at half maximum (FWHM) of the photoluminescence (PL) was as low as 7.8 meV, which is the smallest for self-organized QWRs.
3. InGaAs QWRs on (775)B GaAs substrates.
InィイD20.1ィエD2GaィイD20.9ィエD2As/(GaAs)ィイD26ィエD2(AlAs)ィイD21ィエD2 QWRs with an emission wavelength of 830 nm, a polarization degree of 0.1 and PL - FWHM = 12 meV were fabricated.
4. InGaAs/InAlAs QWR structures on (775)B InP substrates
InGaAs/InAlAs QWRS lattice-matched to (775)B InP substrates was fabricated, which exhibited the first 1.3 μm range light emission for self-organized QWRs.
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