| Project/Area Number |
09450131
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | HIROSHIMA UNIVERSITY |
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Principal Investigator |
SHINGUBARA Shoso Hiroshima University, Dept. E&E, Associate Professor, 工学部, 助教授 (10231367)
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| Co-Investigator(Kenkyū-buntansha) |
SAKAUE Hiroyuki Hiroshima University, Dept. E&E, Research Associate, 工学部, 助手 (50221263)
TAKAHAGI Takayuki Hiroshima University, Dept. E&E, Professor, 工学部, 教授 (40271069)
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| Project Period (FY) |
1997 – 1998
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| Project Status |
Completed (Fiscal Year 1998)
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| Budget Amount *help |
¥13,500,000 (Direct Cost: ¥13,500,000)
Fiscal Year 1998: ¥4,500,000 (Direct Cost: ¥4,500,000)
Fiscal Year 1997: ¥9,000,000 (Direct Cost: ¥9,000,000)
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| Keywords | Single Electron / SET / semiconductor / insulator / ultra thin film / tunneling barrier / multi-layered film / トレネル酸化膜 / トンネル酸化膜 / 量子ドット |
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| Research Abstract |
We have studied the multiply connected SETs by sequential depositions of semiconductor and insulator into a nano holes. This SET is formed in a Si nano hole which is formed by RIE (reactive ion etching) of polysilicon on Si substrate and subsequent dry oxidation to shrink the hole diameter. Quantum dots are fabricated by alternating sequence of Si LPCVD deposition, etching-back, and oxidation. Finally, we have fabricated multiple Q-Dots with a surrounding side gate, and measured electrical characteristics. Unfortunately, the most devices exhibited serious leakage current between a top gate and dots. The failure mechanisms are considered to come from poor reproducibility of etching-back process using CDE. Al ; ternative approach to reduce leakage current was investigated by RIE etching-back, and suppression of the leakage current was obtained. However, the initially proposed fabrication process of SETs have difficulties in controlling dots size uniformly, and alternative approach using anodically oxidized aluminum nano holes array was investigated further, and a new methods to fabricated two dimensional array of SETs is proposed.
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