| Project/Area Number |
09450137
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | The University of Tokyo |
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Principal Investigator |
HOH Koichiro The University of Tokyo, VLSI Design and Education Center, Director, Professor, 大規模集積システム設計教育研究センター, 教授 (60211538)
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| Co-Investigator(Kenkyū-buntansha) |
FUJISHIMA Minoru University of Tokyo, The School of Engineering, Lecturer, 大学院・工学系研究科, 講師 (60251352)
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| Project Period (FY) |
1997 – 1998
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| Project Status |
Completed (Fiscal Year 1998)
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| Budget Amount *help |
¥14,000,000 (Direct Cost: ¥14,000,000)
Fiscal Year 1998: ¥6,100,000 (Direct Cost: ¥6,100,000)
Fiscal Year 1997: ¥7,900,000 (Direct Cost: ¥7,900,000)
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| Keywords | MOSFET / Schottky barrier / tunneling current / titanium silicide / short channel / SOI / complementary mode / 短チャンネル / ニッケルシリサイド |
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| Research Abstract |
The Schottky Barrier Tunneling Transistor (SBTT) was proposed by Sze in 1968, which recently has been revived as a possible breakthrough of the physical limitation of conventional MOSFETs. We have proposed a non-doped SOI-MOSFET using Schottky contacts at source and drain junctions as a new type of the SBTT.By analyzing the equivalent circuit of the SBTT numerically, we have shown that the SBTTs will have a comparable driving current to conventional MOSFETs when low barrier metals are applied to source and drain. Based on the analysis, we have fabricated the SBTT where lightly doped p-type SOI is used for the channel in order to reduce stand-by current and titanium silicide is used for source and drain. The reason of our choice of the titanium suicide is that the Schottky barrier height is about a half of the bandgap of silicon, which suits for the realization of a symmetrical band diagram for electrons and holes. As a result, we have successfully realized both p- and n-type operation on the same substrate by only changing the gate material while using the common material for drain and source.
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