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A Study on Transport Mechanism in High-Temperature Superconductor Josephson Junctions and Their Application to 60K-Electronics

Research Project

Project/Area Number 09450142
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field 電子デバイス・機器工学
Research InstitutionNagoya University

Principal Investigator

FUJIMAKI Akira  Nagoya Univ., Grad.School of Eng., Assoc.Professor, 工学研究科, 助教授 (20183931)

Co-Investigator(Kenkyū-buntansha) AKAIKE Hiroyuki  Nagoya Univ., Center for Cooperative Research in Advance Science and Technology., 先端技術共同研究センター, 助手 (20273287)
INOUE Masumi  Nagoya Univ., Grad.School of Eng., Assist.Professor, 工学研究科, 講師 (00203258)
HAYAKAWA Hisao  Nagoya Univ., Grad.School of Eng., Professor, 工学研究科, 教授 (60189636)
Project Period (FY) 1997 – 1998
Project Status Completed (Fiscal Year 1998)
Budget Amount *help
¥3,100,000 (Direct Cost: ¥3,100,000)
Fiscal Year 1998: ¥3,100,000 (Direct Cost: ¥3,100,000)
KeywordsHigh-temperature superconductor / Josephson Junctions / localized states / 金属-絶縁体転移
Research Abstract

The purpose of this work is to understand the transport mechanisms in Josephson junctions based on high-temperature superconductors, leading to 'usable' Josephson junctions operating at 60 K.We study electrical properties of Yba_2Cu_3O_7 ramp-edge Josephson junctions with PrBa_2Cu_30_7-based barriers having different resistivities. Experimental results show that the transport mechanism of the pair particles is direct tunneling, whereas that of quasipartioles is resonant tunneling in addition to the direct tunneling. We also find that the high density of the localized states in the barriers reduces the quality parameter, IcRn products, where Ic and Rn are a critical current and a junction resistance, respectively. In fact, high IoRn values are obtained up to 6mV in the junctions with highly resistive Ga-doped PBCO barriers.
We face the several drawbacks to the development of the usable junctions. The most serious one is the large spread of the junction parameters such as Ic, Rn. We find that the deposition of the barriers or counter-electrodes increase the spread. To break this situation, we have developed the Josephson junctions without artificial barriers and succeeded in the reduction of the spread.

Report

(3 results)
  • 1998 Annual Research Report   Final Research Report Summary
  • 1997 Annual Research Report
  • Research Products

    (8 results)

All Other

All Publications (8 results)

  • [Publications] M.Horibe,K.Kawai,A.Fujimaki,H.Hayakawa: "Ramp-edge Josephson junctions using barriers of various resistivities" IEICE Trans.Electronics. Vol.E81-C,No.10. 1526-1531 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] S.Hontsu,M.Nakamori,H.Tabata,A.Fujimaki,J.Ishii,T.Kawai: "Formation of c-axis oriented YBa_2Cu_3O_<7-y> thin film on amorphous substrates with Al(lll) buffer layer" Japan.J.Appl.Phys.Pt 1,. Vol.37,No.8. 4358-4361 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] M.Horibe, K.Kawai, A.Fujimaki and H.Hayakawa: "Ramp-edge Josephson junctions using barriers of various resistivities" IEICE Trans.Electronics. vol.E81-C. 1526-1531 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] S.Hontsu, M.Nakamori, H.Tabata, A.Fujimaki, J.Ishii, T.Kawai: "Formation of c-axis oriented YBa2Cu3O7-y thin film on amorphous substrate with Al (111) buffer layr" Japan.J.Applied Physics. Vol.37, No.8. 4358-4361 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] M.Horibe,K.Kawai,A.Fujimaki,H.Hayakawa: "Ramp-edge Josephson junctions using barriers of various resistivities" IEICE Trans.Electronics. Vol.E81-C,No.10. 1526-1531 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] S.Hontsu,M.Nakamori,H.Tabata,A.Fujimaki,J.Ishii,T.Kawai: "Formation of c-axis oriented YBa_2Cu_3O_<7-y> thin film on amorphous substrates with Al(111) buffer layer" Japan J.Appl.Phys.Pt1. Vol.37,No.8. 4358-4361 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] J.Q.Wang, M.Maruyama, T.Ota, H.Terai, M.Inoue, A.Fujimaki, H.Hayakawa: "Electrical Properties of YBCO/Ca-YBCO/YBCO Trilayer Josephson junctions Using C-axis Oriented Films" IEEE Trans.Applied Supercond.Vol.7, No.2. 2948-2951 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] A.Fujimaki, M.Kusunoki, M.Kito, S.Yoshida, H.Andoh, H.Hayakawa: "New Vortex Flow Transistors Made of YBa2Cu3Oy Thin Films" IEEE Trans.Applied Supercond.Vo.7, No.2. 2399-2402 (1997)

    • Related Report
      1997 Annual Research Report

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Published: 1998-04-01   Modified: 2016-04-21  

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