| Project/Area Number |
09450269
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Material processing/treatments
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| Research Institution | Niigata University |
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Principal Investigator |
OHASHI Osamu Graduate School of Science and Technology, Niigata University Professor, 大学院・自然科学研究科, 教授 (00283002)
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| Co-Investigator(Kenkyū-buntansha) |
YOSHIOKA Takayuki Graduate School of Science and Technology, Niigata University Research Associates, 大学院・自然科学研究科, 助手 (30303176)
MATSUBARA Koji Faculty of Engineering, Niigata University Research Associates, 工学部, 助手 (20283004)
NITTA Isami Graduate School of Science and Technology, Niigata University Assistant Professor, 大学院・自然科学研究科, 助教授 (30159082)
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| Project Period (FY) |
1997 – 1999
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| Project Status |
Completed (Fiscal Year 1999)
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| Budget Amount *help |
¥14,100,000 (Direct Cost: ¥14,100,000)
Fiscal Year 1999: ¥1,600,000 (Direct Cost: ¥1,600,000)
Fiscal Year 1998: ¥5,100,000 (Direct Cost: ¥5,100,000)
Fiscal Year 1997: ¥7,400,000 (Direct Cost: ¥7,400,000)
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| Keywords | Silicon / Diffusion bonding / p-n junction / Direct bonding / Ion bombardment / Single crystal / Oxide film / PN接合 / 表面被膜 |
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| Research Abstract |
In order to make a p-n junction without epitaxial growth method, a diffusion bonding of p-type silicon single crystal to n-type one was tried. The effect of bonding conditions such as bonding temperature, surface treatment and misorientation angle at bonding interface on the electric characteristics of the joint was investigated. Joints were made using samples prepared with a (100) crystal plane at bonding surface. All the samples were joined in a vacuum and an air using radio frequency heating.
The electric device with a rectifying action was made by the diffusion bonding. The joints was formed above bonding temperature 800℃ and the current voltage characteristics depended on the temperature, the thickness of oxide film and the misorientation angle at interface. The rectifying action deteriorated with an increase in the bonding temperature and the oxide film on bonded silicon crystal. The electric characteristics of the joints depended on the misorientation angle at bonding interface. It was found that low-angle boundaries and coincidence boundaries were better for the rectifying action than random high-angle boundaries.
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