| Project/Area Number |
09450275
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Metal making engineering
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| Research Institution | Tohoku University |
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Principal Investigator |
WASEDA Yoshio Tohoku University, Institute for Advanced, Materials Processing, Professor, 素材工学研究所, 教授 (00006058)
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| Co-Investigator(Kenkyū-buntansha) |
OKABE Toru Tohoku University, Institute for Advanced, Materials Processing, Research Associ, 素材工学研究所, 助手 (00280884)
YAMANE Hishanori Tohoku University, Institute for Advanced, Materials Processing, Associate Profe, 素材工学研究所, 助教授 (20191364)
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| Project Period (FY) |
1997 – 1998
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| Project Status |
Completed (Fiscal Year 1998)
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| Budget Amount *help |
¥9,000,000 (Direct Cost: ¥9,000,000)
Fiscal Year 1998: ¥3,400,000 (Direct Cost: ¥3,400,000)
Fiscal Year 1997: ¥5,600,000 (Direct Cost: ¥5,600,000)
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| Keywords | Nitride / Gallium / Lithiour / Thermodynamics / New synthesis process / Complex nitrides / センサー / 相平衡 |
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| Research Abstract |
GaN is an important functional material because of its ability to emit short wave length light. Although nitriding of gallium metal by nitrogen gas is thermodynamically feasible at moderate temperatures, it is practically difficult under a normal pressure because incipient reaction leads to a layer of GaN which forms an effective barrier to further reaction. In this communication, we show that a complex nitride such as Li_3GaN_2 can act as a reaction mediator during nitriding of gallium alloys with nitrogen gas. GaN is synthesized without direct physical contact between gallium and nitrogen gas. Feasibility of this reaction is confirmed by measuring thermodynamic properties of Li_3GaN_2, and mechanism of this reaction is discussed using an isothermal chemical potential diagram constructed from the results of the present study. For example, the Gibbs energy of formation of Li_3GaN_2 is determined by measuring electromive force measurement using galvanic cell, and potential range of nitrogen chemical potential under GaN I Li_3GaN_2 two phase equilibrium is discussed. New approach for analyzing the feasibility of GaN synthesis through a mediator is demonstrated.
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