| Project/Area Number |
09480094
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
エネルギー学一般・原子力学
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| Research Institution | HOKKAIDO UNIVERSITY |
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Principal Investigator |
NARITA Masakuni Hokkaido Univ., Grad. School of Eng., Pro., 大学院・工学研究科, 教授 (00001313)
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| Co-Investigator(Kenkyū-buntansha) |
FUJITA Fumiyuki Hokkaido Univ., Grad. School of Eng., Inst., 大学院・工学研究科, 助手 (10002312)
SAWAMURA Teruko Hokkaido Univ., Grad. School of Eng., Asso. Pro., 大学院・工学研究科, 助教授 (30001316)
AKIMOTO Tadashi Hokkaido Univ., Grad. School of Eng., Inst., 大学院・工学研究科, 助手 (10001314)
SAWAMURA Sadashi Hokkaido Univ., Grad. School of Eng., Pro., 大学院・工学研究科, 教授 (70002011)
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| Project Period (FY) |
1997 – 1999
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| Project Status |
Completed (Fiscal Year 1999)
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| Budget Amount *help |
¥10,300,000 (Direct Cost: ¥10,300,000)
Fiscal Year 1999: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 1998: ¥2,500,000 (Direct Cost: ¥2,500,000)
Fiscal Year 1997: ¥6,800,000 (Direct Cost: ¥6,800,000)
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| Keywords | arametric x-ray / monochromatic x-ray / variable wavelength / Si single crystal / relativistic charged particle / electron linear accelerator / surface orientation / K edge / パラメトリックスX線 / 硬X線 / ブラック条件 / K端吸収 / ブラッグ条件 / 可変エネルギーX線 |
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| Research Abstract |
When relativistic charged particles pass through a crystal, x-rays are emitted in the vicinity of Bragg directions. This phenomenon is known as parametric x-ray (PXR) radiation.
The purpose of the study is to generate PXR by the electron linear accelerator (LlNAC) and silicon single crystals, and to make a monochromatic hard x-ray field of good quality and variable wavelength for material research and other applications. The features of PXR were considered by theoretical calculations and experiments.
The PXR in energy from 15 to 30keV was experimentally obtained, and the observed photon intensity was 10ィイD1-5ィエD1〜10ィイD1-6ィエD1 photons per electron at the maximum angular distribution. The PXR intensity increased approximately linearly with the electron energy at the range of several 10MeV of the electron energy. The PXR energy increased linearly with the crystal rotation angle that depended on the reflection plane and the observation angle and not depended on the electron energy. The obtained counts of PXR increased by the large observation angle even if the energy was decreased.
The use of PXR was examined from PXR energy, energy resolution, intensity, and other properties. We are measuring the photoelectric absorption cross section around K edge for several materials. Furthermore, we discussed the possibilities for the use of PXR to the structural analysis of high purity materials such as InP and other semiconductors.
The obtained properties of PXR means that a monochromatic x-ray source of variable wavelength can be made easily by the LINAC and the crystal.
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