Development of Anisotropic Dry Etching Process Using Laser Cooling Method
| Project/Area Number |
09555046
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
機械工作・生産工学
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| Research Institution | Osaka University |
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Principal Investigator |
YASUTAKE Kiyoshi Graduate School of Engineering, Osaka University, Associate Professor, 大学院・工学研究科, 助教授 (80166503)
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| Co-Investigator(Kenkyū-buntansha) |
KAKIUCHI Hiroaki Graduate School of Engineering, Osaka University, Research Assistant, 大学院・工学研究科, 助手 (10233660)
YOSHII Kumayasu Graduate School of Engineering, Osaka University, Professor, 大学院・工学研究科, 教授 (30029152)
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| Project Period (FY) |
1997 – 1999
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| Project Status |
Completed (Fiscal Year 1999)
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| Budget Amount *help |
¥7,800,000 (Direct Cost: ¥7,800,000)
Fiscal Year 1999: ¥1,200,000 (Direct Cost: ¥1,200,000)
Fiscal Year 1998: ¥1,400,000 (Direct Cost: ¥1,400,000)
Fiscal Year 1997: ¥5,200,000 (Direct Cost: ¥5,200,000)
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| Keywords | anisotropic dry etching / NFィイD23ィエD2 plasma / neutral F radical beam / laser collimation / laser cooling / metastable lifetime / ECR plasma / stimulated light force / 半導体ドライエッチング / Fラジカルビーム / ECRラジカル源 / フッ素ラジカル |
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| Research Abstract |
A new method of anisotoropic dry etching using a laser-collimated neutral F radical beam has been proposed. Using this method, no damage nor pattern distortion by the charged particles is expected in the miniaturized Si devices.
(1) For generation of F radicals, we made 13.56 MHz plasma source to decompose NFィイD23ィエD2 gas. NFィイD23ィエD2 is the best matching for the present purpose judged from the view points of radical generation efficiency, easy handling, and no decomposition products.
(2) The wavelength for the closed laser cooling cycle was determined to be 685.793nm by the precision emission spectrum analysis of NFィイD23ィエD2 plasma.
(3) The lower state of laser cooling cycle (3pィイD14ィエD1DィイD30(/)7/2ィエD3【tautomer】3sィイD14ィエD1PィイD25/2ィエD2) is the metastable state. Therefore, the metastable lifetime τィイD2FィエD2 of 3sィイD14ィエD1PィイD25/2ィエD2 state is the key factor to accomplish successful laser collimation of F radical beam using spontaneous light force. So far, however, no reliable report on τィイD2FィエD2 has been published. We have made a new approach to measure τィイD2FィエD2 of 3sィイD14ィエD1PィイD25/2ィエD2 state to get τィイD2FィエD2=3.7±0.5μs.
(4) Based on the short lifetime of 3sィイD14ィエD1PィイD25/2ィエD2 state, it is not a practical way to collimate F radical beam using spontaneous light force. However, the powerful laser collimation method using stimulated light force can be used to collimate F radical beam.
(5) We have developed a highly efficient ECR (electron cyclotron resonance) microwave plasma source of F radical beam. Compared to the RF radical source, 20-fold increase of the Si etching rate and 80-fold increase of the 685.793nm emission intensity of F radicals have been achieved by the developed ECR source.
(6) We measured the Si etching rates with and without the ion retarding bias voltage applied to the Si wafer. It was concluded that a practical etching rate by neutral F radicals would be obtainable for semiconductor manufacturing process.
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Report
(4 results)
Research Products
(3 results)
