| Project/Area Number |
09555092
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | HOKKAIDO UNIVERSITY |
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Principal Investigator |
HASHIZUME Tamotsu Hokkaido Univ., RCIQE,Ass.Pro., 量子界面エレクトロニクス研究センター, 助教授 (80149898)
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| Co-Investigator(Kenkyū-buntansha) |
FUJIKURA Hajime Grad.School of Eng., Hokkaido Univ., Ass.Pro., 工学研究科, 助教授 (70271640)
SEKI Shouhei Oki Electric Ind.Co., Group Leader, 研究開発本部・半導体研究所, グループリーダー (
WU Nan-jan Fac.of Electro-Communications, Univ.of Electro-Communications, Ass.Pro., 電気通信学部, 助教授 (00250481)
AKAZAWA Masamichi Grad.School of Eng., Hokkaido Univ., Ass.Pro., 工学研究科, 助教授 (30212400)
HASEGAWA Hideki Grad.School of Eng., Hokkaido Univ., Pro., 工学研究科, 教授 (60001781)
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| Project Period (FY) |
1997 – 1998
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| Project Status |
Completed (Fiscal Year 1998)
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| Budget Amount *help |
¥7,400,000 (Direct Cost: ¥7,400,000)
Fiscal Year 1998: ¥4,000,000 (Direct Cost: ¥4,000,000)
Fiscal Year 1997: ¥3,400,000 (Direct Cost: ¥3,400,000)
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| Keywords | indium phosphide / Schottky barrier / interface control / electrochemical process / ultrathin Si control layer / HEMT |
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| Research Abstract |
The purpose of this study is to fabricate a high-speed InAlAs/InGaAs HEMT with Schottky gate using in-situ electrochemical process and to fabricate an insulated-gate InAIAs/InGaAs HEMT with low-power consumption using ultrathin Si interface-control technique. The main results obtained are listed below :
(1) A novel in-situ pulsed-mode electrochemical process enables us to produce good Schottky contacts on InP, InAlAs and lnGaAs with carrier transport properties according to the thermionic emission model.
(2) A Ti/n-InP contact formed by sputtering showed good ohmic characteristics after rapid thermal annealing at 500 ﾟC.
(3) A SiN/SiIn-InP structure with the minimum interface state density as low as 2x 10^<10> cm^<-2> was successfully fabricated by epitaxial growth of ultrathin Si interface control layer and its partial nitridation using ECR N_2 plasma.
(4) A small-signal response of a passivated InGaAs structure was observed over a wide frequency range from 1Hz to microwave frequencies. The complicated frequency dependence of the MIS admittance can be well fitted into an equivalent circuit based on the disorder-induced gap state (DIGS) model.
(5) A novel insulated gate InAlAs/InGaAs HEMT structure was realized by use of Si interface control layer. The minimum interface state density of 2x1010 cm^<-2> eV^<-1> was achieved.
(6) It was found that a transconductance gm of the fabricated HEMT with the Si interface control
layer was enhanced more 10 times than that of the HEMT without Si layer.
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