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Research on photoreceptor materials for the ultra-high-density laser printer

Research Project

Project/Area Number 09555104
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section展開研究
Research Field Electronic materials/Electric materials
Research InstitutionSendai National College of Technology

Principal Investigator

HAGA Koichi  Sendai national college of technology, professor, 教授 (30270200)

Co-Investigator(Kenkyū-buntansha) WATANABE Hideo  Sendai national college of technology, headmaster, 校長 (70005255)
Project Period (FY) 1997 – 1999
Project Status Completed (Fiscal Year 1999)
Budget Amount *help
¥9,600,000 (Direct Cost: ¥9,600,000)
Fiscal Year 1999: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 1998: ¥2,700,000 (Direct Cost: ¥2,700,000)
Fiscal Year 1997: ¥6,200,000 (Direct Cost: ¥6,200,000)
Keywordszinc oxide / conductivity / photoreceptor / Litium doping / MO-CVD / organic material / ZnO / 低電子制御 / 積層薄膜 / ドーピング / スパッタリング / 価電子制御
Research Abstract

This report is a summary of the research project of "Research on photoreceptor materials for the ultra-high-density laser printer" advanced by the Ministry of Education Scientific research subsidy (basic research (B) (2)) from 1997 to 1999 fiscal year.
Recently, the input equipment such as high minute digital cameras and scanners are increasing according to the development of the image processing technology. Many of printers as output equipment are obtaining a minute image of about 1200dpi. However, these printers do not reach at the level of the chloridization silver photograph with the resolution of 3600dpi or more. It was necessary to change near-ultraviolet laser light source to obtain the laser printer had this resolution.
In this research, the zinc oxide was examined as a photoreceptor material by using the near-ultraviolet light as a light source for the laser printer. As the preparing method of the zinc oxide, it was assumed the sputtering method with easy preparing method and the MO-CVD method which was able to be progressed industrially, and was clarified crystalline, a composition, and electricity and an optical characteristic to the zinc oxide films obtained by these preparing methods.
Li doped zinc oxide films prepared by MO-CVD methods exhibited a large dark-conductivity of 3.72x10ィイD16ィエD1(Ω・cm). Lithium was used as p-type dopant source. As for the optical sensitivity required from the ratio of photoconductivity (σp) and dark conductivity (σd), the values of 3.71x10ィイD12ィエD1 was obtained, and rise and decay photoresponse was very quick. It was confirmed to be able to apply the zinc oxide films to the photoreceptor for the ultra-high-density laser printer.

Report

(4 results)
  • 1999 Annual Research Report   Final Research Report Summary
  • 1998 Annual Research Report
  • 1997 Annual Research Report
  • Research Products

    (9 results)

All Other

All Publications (9 results)

  • [Publications] K. Haga, F. Katahira, H. Watanabe: "Preperation of ZnO films by atmospheric pressure chemical-vapor deposition using zinc acetylacetonate and ozone"Thin Solid Films. 343-344. 145-147 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K. Haga, P. S. Wijesena and H. Watanabe: "Group III impurity doped ZnO films prepared by atmospheric pressure chemical-vapor deposition using zinc acetylacetonate and oxygen"Applied Surface Science. (in press). (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K. Haga, M. Kamidaira, Y. Kashiwaba, T. Sekiguchi and H. Watanabe: "ZnO thin films prepared by remote plasma enhanced CVD me thod"J. crystal Growth. (in press). (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K.Haga, F.Katahira, H.Watanabe: "Preparation of ZnO films by atmospheric pressure chemical-vapor deposition using zinc acetylacetonate and ozone"Thin Solid Films. 343-344. 145-147 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K.Haga, P.S.Wijesena and H.Watanabe: "Group III impurity doped ZnO films prepared by atmospheric pressure chemical-vapor deposition using zinc acetylacetonate and oxygen"Applied Surface Science. (in press). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K.Haga, M.Kamidaira, Y.Kashiwaba, T.Sekiguchi and H.Watanabe: "ZnO thin films prepared by remote plasma enhanced CVD method"J. Crystal Growth. (in press). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K Haga,P S Wijesena,H Watanabe: "Group III impurity doped ZnO films prepared by atmospheric pressure chemical-vapor deposition using zinc acetylacetonate and oxygen"Applied Surface Science. (in press). (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] K Haga,M Kamidaira,Y Kashiwaba,T Sekiguchi,H Watanabe: "ZnO thin films prepared by remote plasma enhanced CVD method"J. Crystal Growth. (in press). (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] K.Haga,F.Katahira,H.Watanabe: "Preperation of ZnO films by atmospheric pressure chemical-vapor deposition using zinc acetylacetonate and ozone" Thin Solid Films. 337. 1-3 (1999)

    • Related Report
      1998 Annual Research Report

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Published: 1997-04-01   Modified: 2016-04-21  

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