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Preparation of Crystalline Compound Semiconductor in Large Area on the Glass using Low Temperature Growth Technique

Research Project

Project/Area Number 09555113
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section展開研究
Research Field 電子デバイス・機器工学
Research InstitutionTokyo National College of Technology

Principal Investigator

OHYAMA Masanori  Department of Electrical Engineering, Tokyo National College of Technology, Professor, 電気工学科, 教授 (50042685)

Co-Investigator(Kenkyū-buntansha) MATSUDA Syouhei  Awamura Corp., Research Assistant, 技術部第二部, 研究員
FUJITA Yasuhiko  Tokyo Metropolitan University of Technology, Professor, 電子システム, 教授 (70099357)
OHNO Hideki  Department of General Physics, Tokyo National College of Technology, Assistant Professor, 一般物理, 助教授 (20300543)
Project Period (FY) 1997 – 1999
Project Status Completed (Fiscal Year 1999)
Budget Amount *help
¥10,300,000 (Direct Cost: ¥10,300,000)
Fiscal Year 1999: ¥2,400,000 (Direct Cost: ¥2,400,000)
Fiscal Year 1998: ¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 1997: ¥6,400,000 (Direct Cost: ¥6,400,000)
Keywordslow temperature crystal growth / compound semiconductor / heteroepitaxy / dry process / ion assist / optical material / electron beem deposition / sputtering / 低温成長 / ヘチロエピタキシー / 光センサー材料 / ヘテロエピタキシャル / イオンプレーティング / 化合物半導体 / 電子ビーム / 薄膜成長機構 / 機能性材料
Research Abstract

The development of processing semiconductor using homoepitaxial growth has been achieved in technology for the electric devices and other material. In recently, there has been demand to better development of heteroepitaxial growth on the glass of compound semiconductor for photoelectric device. Accordingly a thin film processing technique is necessary for II - VI, III - VI group compound semiconductor of applications to electric material. Considering the research in this method, this study produces semiconductor (ZnS, GaS, GaSe) by the hydrogen ion and electron assist graphoepitaxial growth on the glass. The characteristic of this research is to examine influence of hydrogen ion to thin film growth process in the low temperature crystal growth. The hydrogen ion assist method is available to produce crystal of compound semiconductor on the glass. In this research, it was found that crystalline films are obtained by reactive hydrogen ion at low temperature. The hydrogenous reactive graphoepitaxial growth technique used in this research is useful in deposition of crystalline compound semiconductor.

Report

(4 results)
  • 1999 Annual Research Report   Final Research Report Summary
  • 1998 Annual Research Report
  • 1997 Annual Research Report
  • Research Products

    (23 results)

All Other

All Publications (23 results)

  • [Publications] Masanori Ohyama: "Electrical and Optical Properties on GaSe Thin Films of III-VI Compound Semiconductor"Trans. OF Material Science and Physics. 8. 1-4 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 大山昌憲,大野秀彦,他: "RFスパッタリングによるGaSe薄膜の作製と基礎物性"表面技術協会講演要旨集. 98. 95-96 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 大山昌憲,大野秀彦,他: "RFスパッタリングによるGaS薄膜の作製と基礎物性"表面技術協会講演要旨集. 98. 97-98 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 大山昌憲,大野秀彦,藤田安彦,他: "RFスパッタリングによる硫化ガリウム薄膜"日本真空協会講演予稿集. 39. 93-94 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 大山昌憲,大野秀彦,藤田安彦,他: "RFスパッタリングによるセレン化ガリウム薄膜"日本真空協会講演予稿集. 39. 95-96 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 大山,大野,藤田,松田,池原: "化合物半導体薄膜の低温結晶成長技術"国立東京工業高等専門学校研究報告書. 31. 25-28 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Masanori Ohyama: "Electrical and Optical Properties on GaSe Thin Films of III-VI Compound Semiconductor"Trans.Of Material Science and Physics. Vol.8. 1-4 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Masanori Ohyama, Hidehiko Ohno and et.al.: "Basic Material Phenomena of GaSe film prepared by RF Sputtering method"Proceeding of The Surface Finishing Society of Japan Meeting. Vol.98. 95-96 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Masanori Ohyama, Hidehiko Ohno and et.al.: "Basic Material Phenomena of GaS film prepared by RF Sputtering method"Proceeding of The Surface Finishing Society of Japan Meeting. Vol.98. 97-98 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Masanori Ohyama, Hidehiko Ohno, Yasuhiko Fujita and et.al.: "Gallium Selenide film prepared by RF Sputtering method"Proceeding of The Vacuum Society of Japan Meeting. Vol.39. 93-94 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Masanori Ohyama, Hidehiko Ohno, Yasuhiko fujita and et.al.: "Gallium Sulfide Film prepared by RF Sputtering method"Proceeding of the Vacuum Society of Japan Meeting. Vol.39. 95-96 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M.Ohyama, H.Ohno, Y.Fujita, S.Matsuda and E., Ikehara: "The Low Temperature for a Crystal Growth of the Compound Semiconductor"Research Report of Tokyo National College of Technology. Vol.31. 25-28 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Masanori Ohyama: "Electrical and Optical Properties on GaSe Thin Films of III-VI compound Semiconductor"Trans of Material Science and Physics. 8. 1-4 (1997)

    • Related Report
      1999 Annual Research Report
  • [Publications] 大山昌憲、大野秀彦、他: "RFスパッタリングによるGaSe薄膜の作成と基礎物性"表面技術協会講演要旨集. 98. 95-96 (1998)

    • Related Report
      1999 Annual Research Report
  • [Publications] 大山昌憲、大野秀彦、藤田安彦、他: "PFスパッタリングによる硫化ガリウム薄膜"日本真空協会講演予稿集. 39. 93-94 (1998)

    • Related Report
      1999 Annual Research Report
  • [Publications] 大山昌憲、大野秀樹、藤田安彦、他: "PFスパッタリングによるセレン化ガリュウム薄膜"日本真空協会講演予稿集. 39. 95-96 (1998)

    • Related Report
      1999 Annual Research Report
  • [Publications] 大山、大野、藤田、松田、池原: "化合物半導体薄膜の低温結晶成長技術"国立東京工業高等専門学校研究報告書. 31. 25-28 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] Masanori OHYAMA: "Electrical and Optical Properties on GaSe Thin Films of III-VI Compound Semiconductor" Trans.of Material Science and Phgsics. 8. 1-4 (1997)

    • Related Report
      1998 Annual Research Report
  • [Publications] 大山昌憲、大野秀彦、他: "RFスパッタリングによるGaS薄膜の作製と基礎物性" 表面技術協会講演要旨集. 98. 95-96 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 大山昌憲、大野秀樹、他: "RFスパッタリングによるGaSe薄膜作成と基礎物性" 表面技術協会講演要旨集. 98. 97-98 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 大山昌憲、大野秀彦、藤田安彦、他: "RFスパッタリングによる硫化ガリウム薄膜" 日本真空協会講演予稿集. 39. 93-94 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 大山昌憲、大野秀樹、藤田安彦、他: "RFスパッタリングによるセレン化ガリュウム薄膜" 日本真空協会講演予稿集. 39. 95-96 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] M.OHYAMA,H.OHNO,Y.FUJITA: "Fundamental Properties of Gase Thin Films Prepared by Reactive RF Sputtering" Sino-Japanese Symposium on Sustainable Development Advance and Technology. Aug.8-10 (1997)

    • Related Report
      1997 Annual Research Report

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Published: 1997-04-01   Modified: 2016-04-21  

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