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Lower-Temperature Deposition of Poly-crystalline Silicon Film by High-Density Plasma

Research Project

Project/Area Number 09558055
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section展開研究
Research Field プラズマ理工学
Research InstitutionNagoya University

Principal Investigator

TOYODA Hirotaka  Nagoya Univ., Electrical Eng., Assistant Prof., 工学研究科, 講師 (70207653)

Co-Investigator(Kenkyū-buntansha) KITAGAWA Masatoshi  Matsushia Electric, Senior Researcher, 中央研究所, 主任研究員
NAKAMURA Keiji  Chubu Univ., Electrical Eng., Associate Prof., 工学部, 助教授 (20227888)
SUGAI Hideo  Nagoya Univ., Electrical Eng., Prof., 工学研究科, 教授 (40005517)
Project Period (FY) 1997 – 1999
Project Status Completed (Fiscal Year 1999)
Budget Amount *help
¥6,700,000 (Direct Cost: ¥6,700,000)
Fiscal Year 1999: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 1998: ¥2,000,000 (Direct Cost: ¥2,000,000)
Fiscal Year 1997: ¥4,000,000 (Direct Cost: ¥4,000,000)
Keywordspoly-crystalline silicon / inductively-coupled plasma / lower temperature deposition / high-density plasma / high speed deposition / large area deposition
Research Abstract

Poly-crystalline silicon is one of candidate of the future materiel for thin film transistor. However, deposition technique which satisfies large area, high-speed, lower temperature is not yet established. Purpose of this research is to establish new technique which meets with the above requirement.
Followings are main results of this research project.
1) Experimental demonstration of poly-crystalline silicon by inductively-coupled plasma.
By using an internal-antenna inductively-coupled plasma, we have demonstrated deposition of poly-crystalline silicon deposition. Film evaluation is carried out by using X-ray diffraction analysis (XRD) and transparent electron microscopy (TEM). The XRD result have indicated that the crystalline of the film is (220) oriented and that the grain size is up to 150nm. The TEM result have shown that the film has columnar morphology.
2) Investigation of ionic composition in the plasma
By using quadrupole mass spectrometer, we have investigated ionic composition in the high-density silane plasma, and have found that the SiHx+ ionic component can be sufficiently high enough to explain the film deposition rate. Furthermore, it is also found that the SiHx+ ionic composition is roughly constant irrespective to silane flow rate ratio. This suggests that the crystallization of the film does not depend on the SiHx+ ionic composition.
3) Reproducibility of film crystallization
We have found that the reproducibility of the film crystallization can be improved by controlling the vessel wall condition. This suggests that the key species (presumably H atom) for the film crystallization critically depends on the wall condition.

Report

(4 results)
  • 1999 Annual Research Report   Final Research Report Summary
  • 1998 Annual Research Report
  • 1997 Annual Research Report
  • Research Products

    (12 results)

All Other

All Publications (12 results)

  • [Publications] M. Goto et al.: "Low Temperature Growth of Amorphous and Polycrystalline Silicon Films from a Modified Inductively Coupled Plasma"Jpn. J. Appl. Phys.. 36, No.6A. 3714-3720 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K. Goshima et al.: "Low Temperature Deposition of Poly-Crystalline Silicon Films from a Modified Inductively-Coupled Silane Plasma"Jpn. J. Appl. Phys.. 38, No.6A. 3655-3659 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M. Goto, H. Toyoda, M. Kitagawa, T. Hirao and H. Sugai: "Low Temperature Growth of Amorphous and Polycrystalline Silicon Films from a Modified Inductively Coupled Plasma"Jpn. J. Appl. Phys.. 36(6A). 3714-3720 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K. Goshima, H. Toyoda, T. Kojima, M. Nishitani, M. Kitagawa, H. Yamazoe and H. Sugai: "Low Temperature Deposition of Poly-Crystalline Silicon Films from a Modified Inductively-Coupled Silane Plasma"Jpn. J. Appl. Phys.. 38(6A). 3655-3659 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M.Goto et al.: "Low Temperature Growth of Amorphous and Polycrystalline Silicon Films from a Modified Inductively Coupled Plasma"Jpn.J.Appl.Phys.. 36,No.6A. 3714-3720 (1997)

    • Related Report
      1999 Annual Research Report
  • [Publications] K.Goshima et al.: "Low Temperature Deposition of Poly-Crystalline Silicon Films from a Modified Inductively-Coupled Silane Plasma"Jpn.J.Appl.Phys.. 36,No.6A. 3655-3659 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] 豊田他: "誘導結合型プラズマにおける多結晶シリコン薄膜の低温形成-大粒圭化と高速堆積-" 第45回応用物理学関係連合講演会予稿集. 2. 923-923 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 豊田他: "多結晶シリコン薄膜の低温形成用誘導結合シランプラズマの診断" 第45回応用物理学会学術講演会予稿集. 1. 78-78 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] M.Goto et al.: "Low Temperature Growth of Amorphous and Polycrystalline Silicon Films from a Modified Inductively Coupled Plasma" Jpn. J. Appl. Phys.36. 3714-3720 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] K. Goshim et al.: "Low-Temperature Formation of poly-Si Films by Inductively-Coupled Silane Plasma" Proc. 1st Asian Pacific Int. Sympo. on the Basic and Application of Plasma Technol.183-186 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] H. Toyoda et al.: "Lower Temperature Deposition of poly-Crystalline Silicon Films by a High-Density Inductive Plasma" Proc.1997 Symp. on Dry Process. 193-198 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] H. Toyoda et al.: "LowTemperature Formation of poly-Si Films by Inductively-Coupled Plasma" Proc. Symp. on Plasma Processing. 56-59 (1998)

    • Related Report
      1997 Annual Research Report

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Published: 1997-04-01   Modified: 2016-04-21  

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