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Elementary Excitations at Semiconductor Surfaces with Controlled Adsorption

Research Project

Project/Area Number 09640386
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field 固体物性Ⅰ(光物性・半導体・誘電体)
Research InstitutionIwate University

Principal Investigator

INAOKA Takeshi  Iwate University, Faculty of Engineering, Associate Professor, 工学部, 助教授 (40184709)

Project Period (FY) 1997 – 1999
Project Status Completed (Fiscal Year 1999)
Budget Amount *help
¥2,000,000 (Direct Cost: ¥2,000,000)
Fiscal Year 1999: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 1998: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 1997: ¥700,000 (Direct Cost: ¥700,000)
KeywordsSemiconductor Surface / Adsorption / Carrier-Depletion Layer / Surface Elementary Excitation / Surface Plasmon / Surface Polar Phonon / Density-Functional Theory / Dielectric-Response theory / キャリア蓄積層 / 表面光学フォノン / 誘電応答 / 表面励起 / 電子構造 / 表面バンド湾曲 / キャリア密度分布
Research Abstract

With increase in adsorption coverage, a carrier-depletion or carrier-accmulation layer is often formed at a doped semiconductor surface. At the first stage of the present work, using the local-density approximation (LDA), we have analyzed the variation in ground and thermal-equilibrium states in the depletion-layer (D-L) formation process. We have found the variation and the temperature effect in the carrier-density profile. Next, on the basis of the calculated result of thermal-equilibrium states and by means of the time-dependent LDA, we have made a systematic analysis of evolution of surface elementary excitations in the D-L formation process. The elementary excitations studied here are two coupled carrier plasmon (PL)-polar phonon (PH) modes A and B and the surface polar-PH mode C involving screening charges due to presence of carriers. The major results are summarized as follows :
(1) We have examined the evolution of the energy dispersion and the energy-loss intensity of each mode … More in the D-L formation process. In the mode A or B, an initial upward dispersion branch shifts downward, and evolves into a warped one.
(2) The variation in coupling character of PL and PH in the D-L formation process has been clarified by investigating the phase relation and the amplitude ratio of the carrier and the PH components in the induced charge-density distribution.
(3) The contour-map analysis of the induced charge-density distribution has exhibited a significant variation in spatial structure of the mode A or B in the D-L formation process. In the mode C, it has shown how the surface polar phonon propagates along the surface dragging screening charges and how the screening-charge distribution varies in the process.
(4) Our analysis has given a clear explanation of the experimental result of high-resolution electron energy-loss spectroscopy (HREELS).
In addition, our kinematic analysis of HREELS with the specular-reflection geometry has indicated that, with a grazing incident angle fixed and with the incident energy varied in a broad range, we can scan a narrowed probing dispersion region to make a close observation of the dispersion relation of such surface-excitation modes as studied here.
It has become a future problem to analyze the evolution of surface elementary excitations in an accumulation-layer formation process. Less

Report

(4 results)
  • 1999 Annual Research Report   Final Research Report Summary
  • 1998 Annual Research Report
  • 1997 Annual Research Report
  • Research Products

    (20 results)

All Other

All Publications (20 results)

  • [Publications] Takeshi INAOKA: "Microscopic Structure of Dipolar Surface Plasmons in Spherical Small Particles in a Broad Size Range"Journal of the Physical Society of Japan. 66. 3908-3921 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Takeshi INAOKA: "Evolution of Electron States at Doped Semiconductor Surfaces in a Depletion-Layer Formation Process"Surface Science. 431. 156-167 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Takeshi INAOKA et al.: "Thickness Dependence of Carrier-Electron States in Doped Semiconductor Films"Journal of the Physical Society of Japan. 68. 4009-4013 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Takeshi INAOKA: "Elementary Excitations at Doped Polar Semiconductor Surfaces with Carrier-Depletion Layers"Applied Surface Science. 169/170. 51-56 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Takeshi INAOKA: "Evolution of Elementary Excitations at a Doped Polar Semiconductor Surface in a Depletion-Layer Formation Process"Physical Review B. 63(印刷中). (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Takeshi INAOKA: "Kinematic Analysis of a Dispersion Region Probed in Reflection Electron-Energy-Loss Spectroscopy"Surface Science. (印刷中). (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Takeshi INAOKA: "Microscopic Structure of Dipolar Surface Plasmons in Spherical Small Particles in a Broad Size Range"J.Phys.Soc.Jpn. 66-12. 3908-3921 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Takeshi INAOKA: "Evolution of Electron States at Doped Semiconductor Surfaces in a Depletion-Layer Formation Process"Surface Science. 431-(1/3). 156-167 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Takeshi INAOKA, Atsushi NISHIDA and Masayuki HASEGAWA: "Thickness Dependence of Carrier-Electron States in Doped Semiconductor Films"J.Phys.Soc.Jpn.. 68-12. 4009-4013 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Takeshi INAOKA: "Elementary Excitations at Doped Polar Semiconductor Surfaces with Carrier-Depletion Layers"Applied Surface Science. 169. 51-56 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Takeshi INAOKA: "Evolution of Elementary Excitations at a Doped Polar Semiconductor Surface in a Depletion-Layer Formation Process"Physical Review B. 63 (in press).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Takeshi INAOKA: "Kinematic Analysis of a Dispersion Region Probed in Reflection Electron-Energy-Loss Spectroscopy"Surface Science. (in press).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Takeshi INAOKA: "Microscopic Structure of Dipolar Surface Plasmons in Spherical Small Particles in a Broad Size Range"Journal of the Physical Society of Japan. 66・12. 3908-3921 (1997)

    • Related Report
      1999 Annual Research Report
  • [Publications] Takeshi INAOKA: "Evolution of Electron States at Doped Semiconductor Surfaces in a Depletion-Layer Formation Process"Surface Science. 431・(1-3). 156-167 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] Takeshi INAOKA: "Thickness Dependence of Carrier-Electron States in Doped Semiconductor Films"Journal of the Physical Society of Japan. 68・12. 4009-4013 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] Takeshi INAOKA: "Elementary Excitations at Doped Polar Semiconductor Surfaces with Carrier-Depletion Layers"Applied Surface Science. 印刷中. (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] "その他、投稿中のもの1編、投稿準備中のもの2編"

    • Related Report
      1999 Annual Research Report
  • [Publications] Takeshi INAOKA: "Microscopic Structure of Dipolar Surface Plasmons in Spherical Small Particles in a Broad Size Range" Journal of the Physical Society of Japan. 66・12. 3908-3921 (1997)

    • Related Report
      1998 Annual Research Report
  • [Publications] Takeshi INAOKA: "Evolution of Electron States at Doped Semiconductor Surfaces in a Depletion-Layer Formation Process" Surface Science. (発表予定). (1999)

    • Related Report
      1998 Annual Research Report
  • [Publications] Takeshi INAOKA: "Microscopic Structure of Dipolar Surface Plasmons in Spherical Small Particles in a Broad Size Range" Journal of the Physical Society of Japan. 66・12. 3908-3921 (1997)

    • Related Report
      1997 Annual Research Report

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Published: 1997-04-01   Modified: 2020-05-15  

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