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3C*6H Polytypic Transition Mechanism of SiC and Factors Affecting on Phase Transformation

Research Project

Project/Area Number 09640663
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Inorganic chemistry
Research InstitutionNagoya University

Principal Investigator

SEO Wonseon  Grad.School of Eng., Nagoya Univ., Assistant Professor, 大学院・工学研究科, 助手 (30242829)

Co-Investigator(Kenkyū-buntansha) SUZUKI Yutaka  Grad.School of Eng., Nagoya Univ., Assistant Professor, 大学院・工学研究科, 助手 (60023214)
KUWABARA Katsumi  Grad.School of Eng., Nagoya Univ., Assistant Professor, 大学院・工学研究科, 講師 (40023262)
KOUMOTO Kunihito  Grad.School of Eng., Nagoya Univ., Professor, 大学院・工学研究科, 教授 (30133094)
Project Period (FY) 1997 – 1998
Project Status Completed (Fiscal Year 1998)
Budget Amount *help
¥3,000,000 (Direct Cost: ¥3,000,000)
Fiscal Year 1998: ¥1,200,000 (Direct Cost: ¥1,200,000)
Fiscal Year 1997: ¥1,800,000 (Direct Cost: ¥1,800,000)
KeywordsSilicon Carbide / Phase Transformation / Stacking Faults / Mechanism / Grain Growth / Carbothermal Reduction / Dislocation
Research Abstract

Carefully controlled experiments were carried out to clarify phase transformation mechanism. The effects of stacking fault, the impurity, and morphology on the phase transformation were also investigated. The following conclusions can be drown from the present study.
1)Previous phase transformation mechanism
Though polytypic transformations in SiC have been studied by many researchers, the transformation mechanisms are still controversial because there is no indisputable evidence for the proposed mechanisms. However, recent development of HREM technique and single crystal growth technique give us a chance to clarify the polytypic transformation mechanism for SiC.
2) Factors affecting on the phase transformation
The impurity, stacking faults, and grain morphology are closely related to the phase transformation of SiC.The 3C*4H transformation occur directly for the starting powder with high stacking fault density, while 3C*6H transformation occur for the starting powder with low stacking fault density. It is considered that stacking faults is acted as a seed for 3C*4H phase transformation.
3)New phase transformation mechanism
From the observation of HREM in partially transformed SiC single crystal, we confirmed that polytypic transformation is caused by the slip of separated successive 2 layers and their repetition. Transformation is accomplished by slip due to only dislocation without forming the specialized habit plane and glide plane.

Report

(3 results)
  • 1998 Annual Research Report   Final Research Report Summary
  • 1997 Annual Research Report
  • Research Products

    (11 results)

All Other

All Publications (11 results)

  • [Publications] W.S.Seo,K.Koumoto,S.Arai: "Effects of B,C,and Fe Content on the Stacking Fault Formation during Synthesis of β-Sic Particles in the System SiO_2-C-H_2" J.Am.Ceram.Soc.81・5. 1255-1261 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] W.S.Seo,K.Koumoto: "Factors Affecting Stacking Fault Formation during Synthesis of β-Sic Powder by carbothermal Reduction" The 9th International Conference on HTMC. IX. 487-494 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] W.S.Seo,K.Koumoto: "Stacking Fault and Growth Direction of β-Sic Whisker Synthesized by Carbothermal Reduction" Key Engineering Materials. 159-160. 95-100 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] W.S.Seo, K.Koumoto, S.Arai: "Effects of B,C,and Fe Content on the Stacking Fault Formation during Synthesis of beta-SiC Particles in the System SiO_2-C-H_2" J.Am.Ceram.Soc.81[5]. 1255-1261 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] W.S.Seo, K.Koumoto: "Factors Affecting Stacking Fault Formation during Synthesis of beta-SiC Powder by Carbothermal Reduction" The 9th International Conference on HTMC IX,Univ.Park, PA. 487-494 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] W.S.Seo, K.Koumoto: "Stacking Fault and Growth Direction of beta-SiC Whisker Synthesized by Carbothermal Reduction" Key Engineering Materials. Vols., 159-160. 95-100 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] W.S.Soo,K.Koumoto,S.Arai: "Effects of B,C,and Fe Content on the Stacking Fault Formation during Synthesis of β-Sic Particles in the System SiO_2-C-H_2" J.Am.Ceram.Soc.81・5. 1255-1261 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] W.S.Soo,K.Koumoto: "Stacking Fault and Growth Direction of β-Sic Whisker Synthesized by Carbothrmal Reduction" Key Engineering Materials. 159-160. 95-100 (1999)

    • Related Report
      1998 Annual Research Report
  • [Publications] W.S.Seo, K.Koumoto, S.Arai: "Effects of B,C,and Fe Content on the Stacking Fault Formation during Synthesis of β-SiC Particles in the System SiO_2-C-H_2" in press (J.Am.Ceram.Soc.)

    • Related Report
      1997 Annual Research Report
  • [Publications] W.S.Seo, K.Koumoto: "Factors Affecting Stacking Fault Formation during Carbothermel Reduction" The 9th International Conference on High Temperature Material Chemistry IX. 487-494 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] W.S.Seo, K.Koumoto: "Stacking Fault and Growth Direction of β-SiC Whisker Synthesized by Carbothermal Reduction" International Symposium on Novel Synthesis and Processing of Ceramics. Kurvme Japan (in press).

    • Related Report
      1997 Annual Research Report

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Published: 1997-04-01   Modified: 2016-04-21  

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