| Project/Area Number |
09650035
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
表面界面物性
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| Research Institution | Kanazawa Institute of Technology |
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Principal Investigator |
MINAMI Tadatsugu Kanazawa Institute of Technology, Engineering, Professor, 工学部, 教授 (70113032)
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| Co-Investigator(Kenkyū-buntansha) |
MIYATA Toshihiro Kanazawa Institute of Technology, Engineering, Lecturer, 工学部, 講師 (30257448)
TAKATA Shinzo Kanazawa Institute of Technology, Engineering, Professor, 工学部, 教授 (70064467)
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| Project Period (FY) |
1997 – 1998
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| Project Status |
Completed (Fiscal Year 1998)
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| Budget Amount *help |
¥3,400,000 (Direct Cost: ¥3,400,000)
Fiscal Year 1998: ¥1,100,000 (Direct Cost: ¥1,100,000)
Fiscal Year 1997: ¥2,300,000 (Direct Cost: ¥2,300,000)
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| Keywords | Thin film / Sputtering / Transparent conductive film / Multicomponent oxide / Zinc oxide / Indium oxide / Tin oxide / ITO |
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| Research Abstract |
A number of transparent conductive oxide (TCO) films consisting of binary compounds such as ZnO, In_20_3 and SnO_2 ternary compounds such as Zn_2In_2O_5, In_4Sn_30_<12>, GaIn0_3, ZnSn0_3, and MgIn_2O_4 and multicomponent oxides composed of combinations of binary compounds or ternary compounds were tested for stability in various atmospheres at high temperatures. The TCO films were prepared by magnetron sputtering on quartz substrates at room temperature or 350ﾟC and tested in air, argon gas or a vacuum at temperatures up to 1000ﾟC.Concerning the stability of their electrical properties, SnO_2, SnO_2 : Sb and In_4Sn_30_<12> films prepared at 350ﾟC were stable in air at temperatures up to 900ﾟC.TCO films such as In_20_3, ITO, SnO_2, SnO_2 : Sb and In_4Sn_30_<12> were stable in an Ar gas atmosphere at temperatures up to 900ﾟC.The stability of multicomponent oxide films was controlled by changing the composition of films. In partictular, the stability was improved as the Sn content in TCO films was increased, but it was decreased as the Zn, Mg and/or Ga contents were increased. The resistivity increase found in TCO films that contained Zn was attributed to grain boundary scattering resulting from oxygen adsorption. As a result, the chemical stability at high temperatures was mainly determined by the metal elements contained in the TCO film ; high stability was exhibited in TCO films rich in Sn.
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