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Optimum design and evaluation by spectroscopic ellipsometry of optical thin films for DUV lithography

Research Project

Project/Area Number 09650048
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied optics/Quantum optical engineering
Research InstitutionShizuoka University

Principal Investigator

YAMAGUCHI Tomuo  Shizuoka University, Professor, 教授 (40010938)

Project Period (FY) 1997 – 1999
Project Status Completed (Fiscal Year 1999)
Budget Amount *help
¥3,400,000 (Direct Cost: ¥3,400,000)
Fiscal Year 1999: ¥900,000 (Direct Cost: ¥900,000)
Fiscal Year 1998: ¥1,100,000 (Direct Cost: ¥1,100,000)
Fiscal Year 1997: ¥1,400,000 (Direct Cost: ¥1,400,000)
KeywordsDUV Lithography / Super resolution masks / Single tone phase shifting mask / a-SiNX / Spectroscopic ellipsometry / in-situ monitoring of film growth / substrate temperature monitoring / RF sputtering / empirical dielectric constants / a-SiN_X / 位相反転マスク / Al_<1-X>Cr_XO_Y
Research Abstract

Amorphous silicon nitride films were investigated as an example of optical thin films for super resolution masks and anti-reflection coatings for suppressing halation in a photo-resist for practical ultimate optical lithography using ArF excimer laser (wavelength 193 nm).
Half-tone phase shifting masks for super resolution consists of semi-transparent masking area where the phase shift becomes π against the transparent area so that sharp boundaries are realized. In order to design single tone phase shifting masks and anti-reflection coatings for ArF lithography, optical constants of the film material at 193 nm should be known. We developed a method for estimating optical constants at 193 nm from the spectroellipsometric data for wavelength longer than 240 nm.
We also developed an in situ spectroellipsometer and a method of monitoring temperature and thickness of a-SiNx during RF sputtering. Films sputtered in an atmosphere of Ar and NィイD22ィエD2 mixture exhibit a composition which changes systematically between a-Si and a-SiィイD23ィエD2NィイD24ィエD2 according to the gas composition. Those films are found to be hopeful for the both purposes.

Report

(4 results)
  • 1999 Annual Research Report   Final Research Report Summary
  • 1998 Annual Research Report
  • 1997 Annual Research Report
  • Research Products

    (30 results)

All Other

All Publications (30 results)

  • [Publications] 山口十六夫: "非晶質材料の経験的誘電関数と膜厚揺らぎモデル"表面科学. 18. 676-680 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] A.H.Jayatissa, T.Yamaguchi, K.Sawada, M.Aoyama, and F.Sato: "Characterization of interface layer of silicon on sapphire using spectroscopic ellipsometry"Jpn.J.Appl.Phys.. 36[12A]. 7152-7155 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Z.-T.Jiang, T.Ymaguchi, K.Ohshimo, M.Aoyama, and L.Asinovsky: "The application of silicon rich nitride films for use as deep-ultraviolet lithography phase-shifting masks"Jpn.J.Appl.Phys.. 37[2]. 571-576 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Z.-T.Jiang, K.Ohshimo, M.Aoyama, and T.Yamaguchi: "A study of Cr-Al oxides for single-layer halftone phase-shifting masks for deep-ultraviolet region photolithography"Jpn.J.Appl.Phys.. 37[7]. 4008-4013 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Z.-T.Jiang, T.yamaguchi, M.Aoyama, Y.Nakanishi, L.Asinovsky: "Spectroellipsometric characterzation of thin silicon nitride films"Thin Solid Films. 313-314. 298-302 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] L.Asinovsky, F.Shen, and T.Yamaguchi: "Characterization of the optical properties of PECVD SiN_x films using ellipsometry and reflectometry"Thin Solid Fiims. 313-314. 198-204 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T. Yamaguchi: "Empirical Dielectric Function for Amorphous Materials and Fluctuated Thickness Model"J. Surf. Sci. Jpn.. 18[11](in Japanese). 676-680 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] A. H. Jayatissa, T. Yamaguchi, K. Sawada, M. Aoyama, and F. Sato: "Characterization of interface layer of silicon on sapphire using spectroscopic ellipsometry"Jpn. J. Appl. Phys.. 36[12A]. 7152-7155 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Z.-T. Jiang, T. Yamaguchi, K. Ohshimo, M. Aoyama, and L. Asinovsky: "The application of silicon rich nitride films for use as deep-ultraviolet lithography phase-shifting masks"Jpn. J. Appl. Phys.. 37[2]. 571-576 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Z.-T. Jiang, K. Ohshimo, M. Aoyama, and T. Yamaguchi: "A study of Cr-Al oxides for single-layer halftone phase-shifting masks for deep-ultraviolet region photolithography"Jpn. J. Appl. Phys.. 37[7]. 4008-4013 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Z.-T. Jiang, T. Yamaguchi, M. Aoyama, Y. Nakanishi, L.: "Asinovsky, Spectroellipsometric characterization of thin silicon nitride films"Thin Solid Films. 313-314. 298-302 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] L. Asinovsky, F. Shen, and T. Yamaguchi: "Characterization of the optical properties of PECVD SiNx films using ellipsometry and reflectometry"Thin Solid Films. 313-314. 198-204 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 山口十六夫: "分光エリプソメトリによる表面・簿膜の解析"表面科学. 21(改定済). (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] 江尻哲夫、森本茂豊、Kamil Postava,青山満、山口十六夫: "分光エリプソメトリにおける多変数解析の解の単一性"静大電研報告. 34(改定済). (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] 森本茂豊、藤田吉紀、青山満、山口十六夫: "分光エリプソメトリによるRFスパッタa-SiN簿膜の堆積過程モニタリング"静大電研報告. 33. 119-121 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] N.Saito,Y.Inui,T.Yamaguchi,I.Nakaaki: "Indium doping of amorphous SiC : H films prepared by reactive magnetron co-sputtering"Thin Solid Films. 353. 189-193 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] L.Asinovsky,M.Broomfield,F.Shen,A.Smith,T.Yamaguchi: "Characterization of the Optical properties of PECVD SiNx films using ellipsometry and reflectometry"Thin Solid Films. 313/314. 198-204 (1998)

    • Related Report
      1999 Annual Research Report
  • [Publications] Z.-T.Jiang,K.Ohshimo,M.Aoyama,and T.Yamaguchi: "A study of Cr-Al Oxides for Single-layer Halftone Phase-shifting Masks for Deep-ultraviolet Region Photolithography"Jpn.J.Appl.Phys.. 36(7A). 4008-4013 (1998)

    • Related Report
      1999 Annual Research Report
  • [Publications] A.H.Jayatissa, T.Yamaguchi, H.Kinoshita and T.Hando: "Spectropic ellipsometric characterization of diamondlike carbon films" J.Vac.Sci.Technol.A16〔2〕. 746-748 (1998.3/4)

    • Related Report
      1998 Annual Research Report
  • [Publications] Tomuo Yamaguchi, Masahiro Nasu, Zhong Tao Jiang, Michiharu Tabe, Yozo Kanda: "Spectroellipsometric characterization of SIMOX with nm thick top Si layer" Thin Solid Films. 313/314. 264-269 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] Zhong Tao Jiang, Mitsuru Aoyama, Yoichiro Nakanishi, Tomuo Yamaguchi, Leo Asinovsky: "Spectroellipsometric characterization of thin silicon films" Thin Solid Films. 313/314. 298-302 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] L.Asinovsky, M.Broomfield, F.Shen, A.Smith, T.Yamaguchi: "Characterization of the Optical properties of PECVD SiNx films using ellipsometry and reflectometry" Thin Solid Films. 313/314. 198-204 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] Z.-T.Jiang, K.Ohshimo, M.Aoyama,and T.Yamaguchi: "A study of Cr-Al Oxides for Single-layer Halftone Phase-shifting Masks for Deep-ultraviolet Region Photolithography" Jpn.J.Appl.Phys.36〔7A〕. 4008-4013 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] Shouichi Uchiyama, Yoshihiro Ishigami, Masashi Ohta, Minoru Niigaki, Hirofumi Kan, Yoichiro Nakanishi and Tomuo Yamaguchi: "Growth of AlN films by Magnetron Sputtering" J.Cryst.Growth. 189/190. 448-451 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] Z.-T.Jiang, M.Aoyama, L.Asinovsky and T.Yamaguchi: "Investigation of Silicon Rich Nitride Phase-shifting Mask Material for 193nm Lithography" 3rd Intern.Symp.on 193nm Lithography(Hakodate),Digest of Abstract. 125-126 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] Z.-T.Jiang, T.Yamaguchi, E.Kim, S.Hong, K.No, Y.S.Kang, S.J.Park and Y-B Koh: "Application of DV-Xα to the Cr_2O_3-Al_2O_3 mask materials for Deep-UV Lithography" Bulletin of the society for discrete variational-Xα. 10[2]. 22-26 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] 山口十六夫: "非晶質材料の経験的誘電率関数と膜厚揺らぎモデル" 表面科学. 18[11]. 676-680 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] H.Jayatissa, T.Yamaguchi, K.Sawada and M.Aoyama: "Characterization of interface layer of silicon on sapphire using spectroscopic ellipsometry" Jpn.J.Appl.Phys.36[12A]. 7125-7155 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] Z.-T.Jiang, T.Yamaguchi, M.Aoyama and T.Hayashi: "Possibility of simultaneous monitoring of temperature and surface layer thickness of Si substrate by In situ spectroscopic ellipsometry" Jpn.J.Appl.Phys.37[2]. 674-678 (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] Z.-T.Jiang, T.Yamaguchi, K.Ohshimo, M.Aoyama and L.Asinovsky: "The application of silicon rich nitride films for use as deep-ultraviolet lithography phase-shifting masks" Jpn.J.Appl.Phys.37[2]. 628-633 (1998)

    • Related Report
      1997 Annual Research Report

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Published: 1997-04-01   Modified: 2016-04-21  

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