| Project/Area Number |
09650056
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied optics/Quantum optical engineering
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| Research Institution | Ritsumeikan University |
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Principal Investigator |
UKITA Hiroo Ritsumeikan University, Photonics, Professor, 理工学部, 教授 (00278491)
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| Co-Investigator(Kenkyū-buntansha) |
OKADA Masakatsu Ritsumeikan University, Photonics, Professor, 理工学部, 教授 (90247809)
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| Project Period (FY) |
1997 – 1998
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| Project Status |
Completed (Fiscal Year 1998)
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| Budget Amount *help |
¥3,100,000 (Direct Cost: ¥3,100,000)
Fiscal Year 1998: ¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 1997: ¥1,600,000 (Direct Cost: ¥1,600,000)
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| Keywords | tunable laser diode / external-cavity laser diode / photothermal effect / InP / microcantilever / bimorph structure / thermal strain / antireflection coating / バイモルブ膜 / GaAs系 |
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| Research Abstract |
A wavelength measuring method, which uses a laser diode (LD) attached on a flying slider and a mirror (semi-transparent optical disk) for an extremely short-external-cavity, is proposed.
Not only the wavelength but also the side-mode suppression ratio, the spectrum line width and the mode interval are experimentally investigated, with the external-cavity length, the reflectivity of the LD facet, and the drive current as parameters. We achieved a range of 23nm by changing the external-cavity length for a 1.3 mum wavelength laser diode with antireflection coating on the facet facing the external mirror.
The photothermal deflection of a microcantilever is much increased with a bimorph and an antireflection structure. The deflection is more than half wavelength by the temperature rise of 100ﾟC which is expected by an optical absorptance of over 98% for the antireflection coating of Au/Si_3N4/Au fabricated on the bimorph structure.
As a result, the designed cantilever monolithically integrated on gallium arsenide (GaAs, 2lambda=0.83 mum) or indium phosphide (InP, lambda=1.3 mum) will be used for the external-cavity length change of a tunable laser diode.
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