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Development of an apparatus for electron beam assisted chemical machining of diamond tools

Research Project

Project/Area Number 09650148
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field 機械工作・生産工学
Research InstitutionTokyo University of Science

Principal Investigator

MIYAMOTO Iwao  Tokyo University of Science, Department of Applied Electronics, Professor, 基礎工学部, 教授 (10084477)

Co-Investigator(Kenkyū-buntansha) KIYOHARA Syuji  Tokyo University of Science in Yamaguchi, Department of Applied Electronics, Assistant, 基礎工学部, 教授 (40299326)
清原 修二  山口東京理科大学, 基礎工学部, 助手 (90200360)
Project Period (FY) 1997 – 1998
Project Status Completed (Fiscal Year 1998)
Budget Amount *help
¥3,100,000 (Direct Cost: ¥3,100,000)
Fiscal Year 1998: ¥1,200,000 (Direct Cost: ¥1,200,000)
Fiscal Year 1997: ¥1,900,000 (Direct Cost: ¥1,900,000)
KeywordsDiamond tools / Electron beam assisted chemical etching apparatus / Diamond electronic devices / Diamond probe / Three dimensional profile generation / Fine pattern / ダイヤモンド / 電子ビーム援用化学加工 / 穴,線,矩形パターン / 酸素ガス / 水素ガス / 損傷 / 超微細加工 / ラマン分光
Research Abstract

At first, we developed an apparatus for the electron beam assisted chemical machining (EBACE). Then, machining characteristics of diamond by the EBACE was investigated in order to apply the EBACE to finishing ultra-precision diamond tools and to delineating fine patterns into electronic diamond devices. Last year, we developed the machining stage for making the three dimensional profile on the top of a diamond probe. From the experiments, following results are obtained.
(1) Hole, line and rectangular patterns were successfully fabricated by EBACE with hydrogen and oxygen gases.
(2) In the case of fabrication of the rectangular pattern with hydrogen gas, the etched depths are proportional to the etching time also the etched depth increases with a decrease of the heam scan speed and acceleration voltage of beam.
(3) From Raman spectroscopy, it is conclude that the single crystal diamond chip machined with EBACE has no damage.
(4) The three dimensional protrusion on the top of a diamond probe was successfully fabricated utilizing the developed machining stage. Moreover, fine patterns were delineated into electronic diamond devices.

Report

(3 results)
  • 1998 Annual Research Report   Final Research Report Summary
  • 1997 Annual Research Report
  • Research Products

    (9 results)

All Other

All Publications (9 results)

  • [Publications] J.Taniguchi, I.Miyamoto et al.: "Utilizing of hydrocarbon contamination for prevention of the surface charge-up at electron-beam assisted chemical etching of a diamond chip"Nuclear Instruments and Methods in Physics Research B. 121. 507-509 (1977)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] J.Taniguchi, I.Miyamoto et al.: "Electron Beam Assisted Chemical Etching of Single-Crystal Diamond Substrates with Hydrogen Gas"Japanese Journal of Applied Physics. 36. 7691-7695 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] J.Taniguchi, I.Miyamoto et al.: "Field emission from electron-beam-irradiated bulk diamond"Journal of Applied Surface Science. 146. 299-304 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] J. Taniguchi and I. Miyamoto et al.: "Utilizing of hydrocarbon contamination for prevention of the surface charge-up at electron-beam assisted chemical etching of a diamond chip"Nuclear Instruments and Methods in Physics Research B. 121. 507-509 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] J. Taniguchi and I. Miyamoto et al.: "Electron Beam Assisted Chemical Etching of Single-Crystal Diamond Substrates with Hydrogen Gas"Japanese Journal of Applied Physics. 36, Part1, No. 12B. 7691-7695 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] J. Taniguchi and I. Miyamoto et al.: "Field emission from electron-beam-irradiated bulk diamond"Journal of Applied Surface Science. 146. 299-304 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Jun Taniguchi ほか: "Electron Beam Assisted Chemical Etching of Single-Crystal Diamond Substrates" Jpn.J.Appl.Phys.36. 7691-7695 (1997)

    • Related Report
      1998 Annual Research Report
  • [Publications] Jun Taniguchi ほか: "Field emission from electron-irradiated bulk daimond" J.Appl.Surf.Sci. 掲載決定.

    • Related Report
      1998 Annual Research Report
  • [Publications] J.Taniguchi, et al.: "Electron Beam Assisted Chemical Etching of Single-Crystal Diamond Substrates with Hydrogen Gas" Jpn.J.Appl.Phys.36,12B. 7691-7695 (1977)

    • Related Report
      1997 Annual Research Report

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Published: 1997-04-01   Modified: 2016-04-21  

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