| Project/Area Number |
09650342
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | University of Tsukuba |
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Principal Investigator |
NATORI Kenji University of Tsukuba, Institute of Applied Physics, Professor, 物理工学系, 教授 (20241789)
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| Co-Investigator(Kenkyū-buntansha) |
SANO Nobuyuki University of Tsukuba, Institute of Applied Physics, Lecturer, 物理工学系, 講師 (90282334)
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| Project Period (FY) |
1997 – 1998
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| Project Status |
Completed (Fiscal Year 1998)
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| Budget Amount *help |
¥2,800,000 (Direct Cost: ¥2,800,000)
Fiscal Year 1998: ¥600,000 (Direct Cost: ¥600,000)
Fiscal Year 1997: ¥2,200,000 (Direct Cost: ¥2,200,000)
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| Keywords | Quantum dot / Resonant tunneling / Single electron transistor / Ultra-small device / Mesoscopic device |
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| Research Abstract |
The mechanism of the electron resonant transport through a semiconductor quantum dot, and the current-voltage characteristics of a single electron transistor (SET) was investigated. So far, lots of problems have been pointed out for farther down-sizing of the conventional device in integrated electronics, and the SET is attracting an increasing attention as a promising candidate for future successor. As the device size of a SET is scaled down, the island part of the device shifts from a classical system in thermal equilibrium to a quantum mechanical system with discrete energy levels, and the conventional theory of the device operation loses its validity. We have derived a model Hamiltonian describing the property of a simple scaled-down SET including only a single spin-degenerate quantum level, and discussed the transport mechanism. A current map is worked out so as to provide the current value for an arbitrary pair of the gate bias and the drain bias. Such an information is useful for application of the device to the circuit composition. It was shown that the carrier flow dynamics through the dot play an important role in controlling the current magnitude. A more realistic model of an ultra-small SET, fabricated with the silicon rectangular parallelepiped quantum dot is investigated and the current-voltage characteristics is simulated by the Monte Carlo method. The influence of the dot level structure, especially the level degeneracy, on the current-voltage characteristics is analyzed. Also the effect of temperature as well as that of the relative magnitude of tunneling related to the source and the drain is studied. This project has made it possible to understand the overall , though approximate, device behavior of the ultra-small SET for a wide range of the gate bias and the drain bias variation.
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