Fundamental study for quantum effect devices using nanocrystalline silicon formed in single crystalline insulator
| Project/Area Number |
09650348
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | TOKYO INSTITUTE OF TECHNOLOGY |
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Principal Investigator |
WATANABE Masahiro Associatc Proffesor, Research Center for Quantum Effect Electrinics, Tokyo Institute of Tech., 量子効果エレクトロニクス研究センター, 助教授 (00251637)
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| Project Period (FY) |
1997 – 1998
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| Project Status |
Completed (Fiscal Year 1998)
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| Budget Amount *help |
¥3,400,000 (Direct Cost: ¥3,400,000)
Fiscal Year 1998: ¥1,300,000 (Direct Cost: ¥1,300,000)
Fiscal Year 1997: ¥2,100,000 (Direct Cost: ¥2,100,000)
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| Keywords | nanocrystalline silicon / Calcium fluoride / super heterosturcture / quantum confinement / photoluminescence / current injection luminescence / single crystal / photonic materal |
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| Research Abstract |
The purpose of this study is to demonstrate new optical properties originated from nanometer size silicon crystals formed in single crystalline calcium fluoride (CaF2), which is a wide band gap ionic material, In such kind of material systems, srong quantum confinement can be expected due to large conduction band discontinuity at the heterointerface, which leads fascinating changes of eletctron-photon interaction from the bulk material.
Results obtained in this study are as follows.
i) Formation technique of nanocrystalline silicon has been developed using molecular beam epitaxy based technique with partially ionized beam of CaF_2 and codeposition of CaF_2 and Si.
ii) Visible photoluminescence and electroluminescence was observed at room temperature. Formation condition was optimized by luminescence intensity and surface morphology using the growth temperature, growth rate, flux ratio.
iii) Rapid thermal annealing process was introduced for improving luminescence intensity and uniformity. Dependence of luminescence on annealing time, temperature increasing rate, ambient gas was also clarified.
iv) Current injection luminescence was demonstrated using current restriction structure with current blocking SiO_2 layer and transparent conducting ITO electrode fabricated using photolithography and wet chemical etching. Current injection luminescene of the sample was stable even at room temperature at least more than six hours. From this result, nanocrystalline silicon embedded in single crystalline CaF_2 has stable heterointerface, which is atractive for photonic materials on silicon substrate.
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Report
(3 results)
Research Products
(16 results)
