| Project/Area Number |
09650354
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Shizuoka University |
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Principal Investigator |
SUKEGAWA Tokuzo Shizuoka Univ., Res.Inst.of Electron., Prof., 電子工学研究所, 教授 (30006225)
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| Co-Investigator(Kenkyū-buntansha) |
KIMURA Masakazu Shizuoka Univ., Res.Inst.of Electron., Res.Asso., 電子工学研究所, 助手 (50177929)
TANAKA Akira Shizuoka Univ., Res.Inst.of Electron., Asso.Prof., 電子工学研究所, 助教授 (50022265)
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| Project Period (FY) |
1997 – 1998
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| Project Status |
Completed (Fiscal Year 1998)
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| Budget Amount *help |
¥3,300,000 (Direct Cost: ¥3,300,000)
Fiscal Year 1998: ¥1,100,000 (Direct Cost: ¥1,100,000)
Fiscal Year 1997: ¥2,200,000 (Direct Cost: ¥2,200,000)
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| Keywords | liquid phase epitaxy / gallium nitride / negative electron affinity / compositional conversion / NEA |
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| Research Abstract |
High efficient NEA (Negative Electron Affinity) devices are required as a cold emitter realizing high speed processing and/or high performance display, which are eager in recent information-oriented society. GaN with wide bandgap energy is a promising material for the devices. However, at the present, GaN devices are fabricated on a sapphire substrate which is electrical non-conductive. This is the most severe problem in developing GaN devices. To overcome this problem, this research project has been made to develop the preparation technique of a GaN thick layer on a GaP semiconductor substrate.
We used the "Compositional conversion technique" which was developed by us to grow an alloy layer with desired composition on a lattice mismatched substrate. The principle is based on the difference in chemical bond strength of the materials. In this research, GaAs or GaP is converted to GaN with strong bonds through chemical reaction with NH_3.
In the experiments, we tried two possibilities : 1) GaAs layers grown on a GaP substrate were treated in NH_3 gas at the temperature range of 650ﾟC to 850ﾟC to convert only the GaAs layer to GaN, and 2) the surface of GaP substrates was directly nitrided at higher temperature range of about 1000ﾟC, In the former case, whole of the GaAs layer with 5mum thickness could be converted to GaN after 1 hour at 850ﾟC.In the later case, GaN layers with 3mum thickness could be formed after 1 hour at 1000ﾟC.Using these GaN layers on GaP substrates, we tried the growth of GaN on it by evaporation method, and very thick GaN layers, exceeded 100mum, could be obtained.
Thus, the GaN layers on a semiconductor GaP substrate available to GaN growth has been developed. These fruits should make progress in NEA devices and other GaN
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