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Photo-Induced Structural Change in Hydrogenated Amorphous Silicon

Research Project

Project/Area Number 09650357
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionOsaka University

Principal Investigator

OKAMOTO Hiroaki  Osaka University Faculty of Engineering Science, Professor, 基礎工学研究科, 教授 (90144443)

Co-Investigator(Kenkyū-buntansha) HATTORI Kiminori  Osaka University Faculty of Engineering Science, Associate Professor, 基礎工学研究科, 助教授 (80228486)
Project Period (FY) 1997 – 1998
Project Status Completed (Fiscal Year 1998)
Budget Amount *help
¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 1998: ¥1,300,000 (Direct Cost: ¥1,300,000)
Fiscal Year 1997: ¥2,300,000 (Direct Cost: ¥2,300,000)
KeywordsAmorphous Semiconductor / Photo-Induced Degradation / Polarized Electroabsorption / Structural Change / Density / Internal Stress / 偏光エレクトロアブソ-プション
Research Abstract

Polarized electroabsorption (PEA) method has been used to study photo-induced structural changes in hydrogenated amorphous silicon.The field-modulated absorption consists of two components, one of which is the true polarization-dependent electroabsorption serving as an indicator of the structural disorder, and the other is the thermoabsorption originated in the temperature modulation due to Joule heating.The thermoabsorption component has to be removed from the observed field-modulated absorption signal to make an accurate and reliable evaluation of structural disorder in terms of the polarization dependence of the electroabsorption signals, since an increase in the sample resistance owing to the light-induced degradation should give a large impact on the magnitude of the thermoabsorption signal.The phase-separation procedure has been applied to deconvolute the observed field-modulated absorption signal into two components, leading to a result that about 15-25% of the observed signal a … More rises from the thermoabsorption effect for the Tauc gap region.Nevertheless, any essential alternation is not needed for our previous PEA result that the structural disorder is increased upon light-exposure.The internal stress as well as mass density have been measured to provide alternative evidences for the photo-induced structural change by the use of the bending-beam method and floatation method, respectively.It is found from these results that amorphous silicon films expand and the density tends to decrease upon light-exposure.The dynamics of the change in the PEA disorder, internal stress, mass density and metastable defect density under light exposure have been systematically investigated in order to resolve the essential link among them.The change in internal stress as well as mass density appears to be strongly dependent on the duration of light exposure pulse even through the accumulated exposure time is fixed, whereas such a peculiar behavior does not occur for the PEA disorder.The experimental findings lead us to an idea that the photo-induced increase in the net-work disorder shall result in an accumulation of the local net-work stress, and then a creation of metastable defects.The causality relation is formulated in the simplistic physical basis, which gives a clear-cut interpretation for the observed dynamics of the photo-induced structural change and creation of metastable defects in a semi-qualitative manner.If our new idea were true, then the removal of the photo-induced degradation should be established by interrupting the link ; increases in the new-work disorder, accumulation of local net-work stress, and creation & stabilization of metastable defects. Less

Report

(3 results)
  • 1998 Annual Research Report   Final Research Report Summary
  • 1997 Annual Research Report
  • Research Products

    (18 results)

All Other

All Publications (18 results)

  • [Publications] 清水 耕作: "Reversible Photo-Induced Structural Change in a-Si : H" Jpn.J.Appl.Phys.36. 29-32 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] 清水耕作: "A Study on Reversible Photo-induced Structural Change in a-Si : H by Polarized Electroabsorption" Tech.Digest of the 9th International Photovoltaci Science and Engineering Conference,Miyazaki. 563-564 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] 清水耕作: "Photo-induced Structural Change and defect creation in Hydrogenated Amorphous Silicon" J.Non-Cryst.Solids. 227-230. 267-271 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] 清水耕作: "Photo-induced Structural Changes in Hydrogenated Amorphous Silicon" Material Research Society Symposium Proceedings of Amorphous Silicon Technology-1998. (in press).

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] 服部公則: "Photomodulated electron-spin resonance in amorphous Silicon" J.Appl.Phys.84. 4974-4978 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] 岡本博明: "アモルファス半導体の光吸収スペクトル" 固体物理. 32. 63-68 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] 岡本博明: "アモルファスシリコンにおける光誘起特性変化" 応用物理. 99. 1041-1046 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] K.Shimizu, T.Shiba, T.Tabuchi and H.Okamoto: ""A Study on Reversible Photo-induced Structural Change in a-Si : H by Polarized Electroabsorption"" Tech.Digest of the 9th International Photovoltaci Science-and Engineering Conference, Miyazaki. 563-564 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] K.Shimizu, T.Shiba, T.Tabuchi and H.Okamoto: ""Reversible Photo-Induced Structural Change in Hydrogenated Amorphous Silicon" Jpn.J.Appl.Phys. 36. 29-32 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] K.Shimizu, T.Tabuchi, M.Iida and H.Okamoto: ""Photo-induced Structural Change and defect creation in Hydrogenated Amorphous Silicon"" 17th Intern.Conf.on Amorphous Semiconductors-Science & Technology, Budapest, 1997 ; J.Non-Cryst.Solids 227-230. 267-271 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] K.Shimizu, T.Tabuchi, K.Hattori, H.Kida and H.Okamoto: ""Photo-induced Structural Changs in Hydrogenated Amorphous Silicon"" Material Research Society Symposium Proceedings of Amorphous Silicon Technology-1998, California. (in press.). (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] K.Hattori, Y.Ota, K.Sato and H.Okamoto: ""Photomodulated electron-spin resonance in amorphous silicon"" J.Appl.Phys.84. 4974-4978 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] H.Okamoto: ""Optical Absorption Spectrum of Amorphous Semiconductors" (in Japanese.)" Solid State Phys.32. 63-68 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] H.Okamoto: ""Photo-Induced Structural Changes in Hydrogenated Amorphous Silicon" (in Japanese.)" Oyo Buturi. 66. 1041-1046 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] 清水耕作: "Photo-induced Structural Change and defect creation in Hydrogenated Amorphous Silicon" J. Non-Cryst. Solids. 227-230. 267-271 (1997)

    • Related Report
      1998 Annual Research Report
  • [Publications] 清水耕作: "Photo-induced Structural Changes in Hydrogenated Amorphous Silicon" Material Research Society Symposium Proceedings of Amorphous Silicon Technology-1998. in press.

    • Related Report
      1998 Annual Research Report
  • [Publications] 服部公則: "Photomodulated electron-spin resonance in amorphous silicon" J. Appl. Phys.

    • Related Report
      1998 Annual Research Report
  • [Publications] 清水耕作: "Reversible Photo-Induced Structural Change in a-Si:H" Jpn.J.Appl.Phys.36. 29-32 (1997)

    • Related Report
      1997 Annual Research Report

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Published: 1997-04-01   Modified: 2016-04-21  

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