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Investigation on Pileup of Arsenic and Antimony Ion-implanted into Silicon

Research Project

Project/Area Number 09650358
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionHIROSHIMA UNIVERSITY

Principal Investigator

SHIBAHARA Kentaro  Hiroshima University, Research Center for Nanodevices and Systems Assoc. Prof., ナノデバイス・システム研究センター, 助教授 (50274139)

Co-Investigator(Kenkyū-buntansha) YOKOYAMA Shin  Hiroshima University, Research Center for Nanodevices and Systems Prof., ナノデバイス・システム研究センター, 教授 (80144880)
Project Period (FY) 1997 – 1998
Project Status Completed (Fiscal Year 1998)
Budget Amount *help
¥3,200,000 (Direct Cost: ¥3,200,000)
Fiscal Year 1998: ¥1,400,000 (Direct Cost: ¥1,400,000)
Fiscal Year 1997: ¥1,800,000 (Direct Cost: ¥1,800,000)
KeywordsSilicon / Ion Implantation / Arsenic / Antimony / Pileup / ヒ素
Research Abstract

Systematic evaluation on depth profiles and electrical characteristics of SbィイD1+ィエD1 or AsィイD1+ィエD1 implanted layer were carried out for various ion implantation conditions and annealing conditions. The obtained quantitative data will be a base to construct the models to describe behavior of the dopants during annealing. We proposed the Sb pileup model that Sb is transported by recrystallization caused by annealing in an amorphized layer produced by SbィイD1+ィエD1 ion implantation. By relatively low temperature (800-900 ℃) RTA (Rapid Thermal Processing), Sb pileup is suppressed. In the case of As, RTA was not effective for the pileup suppression. Sheet resistance of Sb implanted layer was improved by using RTA and increasing SbィイD1+ィエD1 dose to 500 Ω/sq. maintaining junction depth around 20 nm.

Report

(3 results)
  • 1998 Annual Research Report   Final Research Report Summary
  • 1997 Annual Research Report
  • Research Products

    (9 results)

All Other

All Publications (9 results)

  • [Publications] K.Shibahara: "Improvement in Sb-Doped Ultrashallow Junction Sheet Resistance by Dopant Pileup Reduction at the SiO 2/Si Interface"Jpn.J.Appl.Phys.. (in printing). (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] K.Shibahara: "Dopant Loss Origins of Low Energy Implanted Arsenic and Antimony for Ultra Shallow Junction Formation"Mat.Res.Soc.Symp.Proc.. Vol.532. 23-28 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] K.Shibahara: "Improvement in Sheet Resistance of Sb-Doped Ultra Shallow Junction by Dopant Pileup Reduction at the SiO2/Si"Extend.Abst.of the 1999 Int.Conf.on Solid State Devices and Materials (SSDM'99). 514-515 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] K.Egusa: "Influence of High Dose Low Energy Ion Implantation on Dopant Depth Profile"Proc.of 1998 Int.Conf.on Ion Implantation Tech.(IIT'98). (in printing). (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] K. Shibahara, K. Egusa and K. Kamesaki: "Improvement in Sb-Doped Ultrashallow Junction Sheet Resistance by Dopant Pileup Reduction at the SiO2/Si Interface"Jpn. J. Appl. Phys. (in printing). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] K. Shibahara, H. Furumoto, K. Egusa, M. Koh and S. Yokoyama: "Dopant Loss Origins of Low Energy Implanted Arsenic and Antimony for Ultra Shallow Junction Formation"Mat.. Res. Soc. Symp. Proc.. Vol.532. 23-28 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] K. Shibahara, K. Egusa and K. Kamesaki: "Improvement in Sheet Resistance of Sb-Doped Ultra Shallow Junction by Dopant Pileup Reduction at the SiO2/Si"Extend. Adst. Of the 1999 Int. Conf. On Solid State Devices and Materials (SSDM'99). 514-515 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] K. Egusa and K. Shibahara: "Influence of High Dose Low Energy Ion Implantation on Dopant Depth Profile"Proc. Of 1998 Int. Conf. On Ion Implantation Tech. (IIT'98). (in printing). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] K.Shibahara: "Dopant Loss Origins of Low Energy Implanted Arsenic and Antimony for Ultra Shallow Junction For mation" Materials Research Society Symposium Proceedings. 525. 23-28 (1998)

    • Related Report
      1998 Annual Research Report

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Published: 1997-04-01   Modified: 2016-04-21  

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