| Project/Area Number |
09650363
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | KYUSHU UNIVERSITY |
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Principal Investigator |
NAKASHIMA Hiroshi ADVANCED SCIENCE AND TECHNOLOGY CENTER FOR COOPERATIVE RESEARCH,KYUSHU UNIVERSITY,ASSOCIATE PROFESSOR, 先端科学技術共同研究センター, 助教授 (70172301)
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| Co-Investigator(Kenkyū-buntansha) |
FURUKAWA Katsuhiko ADVANCED SCIENCE AND TECHNOLOGY CENTER FOR COOPERATIVE RESEARCH,KYUSHU UNIVERSIT, 先端科学技術共同研究センター, 助手 (40264121)
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| Project Period (FY) |
1997 – 1998
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| Project Status |
Completed (Fiscal Year 1998)
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| Budget Amount *help |
¥3,400,000 (Direct Cost: ¥3,400,000)
Fiscal Year 1998: ¥1,400,000 (Direct Cost: ¥1,400,000)
Fiscal Year 1997: ¥2,000,000 (Direct Cost: ¥2,000,000)
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| Keywords | SILICON / VERY THIN FILM / ECR PLASMA / LOW TEMPERATURE FORMATION OF THIN FILM / ELECTRICAL FUNCTIONALITY / SPUTTERING / 低温薄膜形成 |
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| Research Abstract |
This research aimed to establish techniques for fabricating very thin and high quality Si-based insulating films at low temperature by using sputtering-type ECR plasma and to find the functionality of the deposited films, The results are summarized as follows :
1.we have established the deposition techniques of SiO_2 having breakdown field 0110 MV/cm at low temperature of 130ﾟC
2.We have succeeded in the fabrication of very thin SiO_2 having a thickness of 9 nm which showed high breakdown characteristics of 9 MV/cm interface state densities of less than 1CHIl0^<1I>cm^<-2>eV^<-1>, and fixed charge of less than 1CHIl0^<1I>cm^<-2>.
3.We have succeeded in the fabrication of SiON films having breakdown characteristics of 13 MV/cm at low temperature of 130ﾟC by optimizing the plasma from mixture gases of oxygen and nitrogen.
4.Dense SiN film was deposited by using sputtering-type ECR plasma at room temperature. The refractive index, chemical etching rate, IR characteristics of the SiN films had almost the same as that deposited by CVD at 900 ﾟC.
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