| Project/Area Number |
09650372
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka Institute of Technology |
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Principal Investigator |
YODO Tokuo Osaka Institute of Technology, Faculty of Engineering, Associated Professor, 工学部, 助教授 (70288752)
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| Project Period (FY) |
1997 – 1998
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| Project Status |
Completed (Fiscal Year 1998)
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| Budget Amount *help |
¥3,200,000 (Direct Cost: ¥3,200,000)
Fiscal Year 1998: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 1997: ¥2,500,000 (Direct Cost: ¥2,500,000)
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| Keywords | OEIC / ECR plasma / epitaxial growth / galium arsenide on silicon / galium nitride / nitride semiconductor / GaAsN alloy / lattice matching / OEIC / GaAs on Si / 格子不整合 / 界面電荷整合性 / エピタヤンヤル成長 / Gabs_<1-X>N_Y / 窒化物 / エピタキシャル成長 / GaAs_<1-x>N_x |
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| Research Abstract |
In this research, we tried to grow epitaxial films of GaAs_<1-x>xN_x alloy on nominal Si(001) substrates using ECR-MBE method. The alloy composition (x) of GaAs_<1-x>xN_x on Si with lattice matching is estimated to be about 20 %. The GaAs_<1-x>xN_x alloy with alloy composition of 15 % did not separate GaAs and GaN phases and form uniform alloy, but the crystalline quality of GaAs_<1-x>xN_x alloy was very bad. The GaAs_<1-x>xN_x alloy with alloy compositions of more than 15% separated GaAs and GaN phases because of miscibility gap. Moreover, the crystalline quality of the alloy was greatly degraded despite of close lattice matching with Si. The crystalline quality of the films begins to be degraded from about 5 % by increasing the alloy composition, probably because of mixture of zincblende GaAs_<1-x>xN_x alloy and hexagonal GaAs_<1-x>xN_x in GaAs_<1-x>xN_x alloy.
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