Preparation of parallel type high density magnetic random access memory
| Project/Area Number |
09650386
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | Shimane University |
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Principal Investigator |
NAWATE Masahiko Shimane University, Cooperative Research Center, Associate Professor, 地域共同研究センター, 助教授 (10198400)
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| Co-Investigator(Kenkyū-buntansha) |
ITO Takashi Shimane University, Interdisciplinary Faculty of Science and Engineering, Profes, 総合理工学部, 教授 (20032609)
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| Project Period (FY) |
1997 – 1998
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| Project Status |
Completed (Fiscal Year 1998)
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| Budget Amount *help |
¥3,400,000 (Direct Cost: ¥3,400,000)
Fiscal Year 1998: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 1997: ¥2,600,000 (Direct Cost: ¥2,600,000)
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| Keywords | random access memory / MRAM / parallel type / microfabrication / magnetic material / giant magnetoresistance / sandwich structure / 磁気ランダムアクセスメモリ |
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| Research Abstract |
Prototype of Magnetic Random Access Memory (MRAM) was prepared by using thin film deposition and microfabrication techniques. MRAM of 1 bit pattern was made from magnetoresistive layer (FeCo/Cu/FeCo sandwich structure), upper and lower insulating layers and upper and lower electrode wires. Insulating layers were inserted in order to make partial electric contact between the magnetoresitive layer and electrodes, so that the electric current for read-out runs through the magnetoresistive layer along the film plane, which is necessary for effective detection. Writing operation was carried out with external electromagnet and the memory operation was confirmed.
In preparing the MRAM device the most important technique is the microfabrication. Vacuum Evaporation with Creeping Substrate (VECS) technique was also invented in this study, to improve the fabrication technique.
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Report
(3 results)
Research Products
(18 results)
