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Basic Research on the Continuous Film Formation by Using Discharge Micro-Sputtering

Research Project

Project/Area Number 09650798
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Material processing/treatments
Research InstitutionScience University of Tokyo in YAMAGUCHI

Principal Investigator

NAKAYAMA Toshio  Science University of Tokyo Professor in YAMAGUCHI, Materials Science & Engineering, 基礎工学部, 教授 (40084397)

Co-Investigator(Kenkyū-buntansha) 西川 英一  東京理科大学, 工学部, 講師 (80277277)
Project Period (FY) 1997 – 1998
Project Status Completed (Fiscal Year 1998)
Budget Amount *help
¥2,900,000 (Direct Cost: ¥2,900,000)
Fiscal Year 1998: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 1997: ¥2,400,000 (Direct Cost: ¥2,400,000)
KeywordsMicro Sputtering / Micro Etching / Thin Film Formation / Miri Processing / micro Processing / Continuous formation / Penning Discharge Micro-Sputtering / マイクロスパッタリング / ミクロン加工 / 炭化物薄膜 / 窒化物薄膜 / 付着力 / 対摩耗性
Research Abstract

Using the micro sputtering technique, continuous thin film formation was carried out by the movement of the substrate put in vacuum vessel along straight line. In the thin film formation, slide glass (38×12mm) is used the substrate, and negative electrode target 99.99% purity silver (Ag), and it was carried out as an experimental condition under equilibrious argon gas pressure 3×10-2Pa, impressed voltage 1.3kV, discharge current 5mA, the experiment was done during 2 minutes for one time. When the size of the duct equipped the negative electrode did it with 1.5×3mm and 0.5×3mm, it was that the each l.5mm substrate respectively moved, and it was possible to form the thin silver film of 1.5X20mm and 0,5X17m for formation time in the 30 minutes, The longitudinal film thickness distribution was almost uniform 900A. As this result, it was confirmed that a thin film could be formed by continuing, by the movement of the substrate in the straight line. Continuously, the examination of the continuous etching was also carried out for etching mode of the micro sputtering technique. For single crystal silicon substrate, it was possible to describe the etching pattern of the curve in spot sutra of etching size φ100 μm and φ25 μm by the rotation of the substrate using the Ag negative electrode. On the basis of the above-mentioned fact, the equipment which could continuously carry out new etching and sputtering was designed, and it was produced experimentally, and the experiment was carried out. As the result, it was proven that to sputter on etched plane by the traverse of the substrate further was possible. For copper and silver, the linear relation was almost obtained between the vapor deposition film thickness and discharge time.

Report

(3 results)
  • 1998 Annual Research Report   Final Research Report Summary
  • 1997 Annual Research Report
  • Research Products

    (12 results)

All Other

All Publications (12 results)

  • [Publications] 西川英一・中山登史男・他: "マイクロスパッタリング技術によるカーボン薄膜、Si薄膜の作成"1998年春季第45回応用物理学関係連合講演集. 67 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] 西川英一・中山登史男: "固体炭素源を用いたマイクロスパッタリング法によるTic薄膜の作成"真空. 発表予定. (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] 中山登史男・西川英一: "マイクロ・スパッタリング法による連続薄膜形成機の試作"日本機械学会論文集. 投稿予定. (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] 高岡智宏・バンシン: "マイクロ・スパッタリング法による化合物薄膜の形成と評価"1999年度卒業研究論文(東京理科大学工学部電気工学科). 61-65 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] "マイクロ・スパッタリング法によるシリコン薄膜の形成とその評価"1998年度卒業研究論文(東京理科大学工学部電気工学科). 136-140 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Eiichi Nishikawa, Toshio Nakayama.: "Preparation of a Thin-Film of Carbon Compoun by Micro-Sputtering"Proc. Of the 45th Japaneese Joint Conf. for The Applied Physics. 67. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Eiichi Nishikawa, Toshio Nakayama.: "Preparation of a Thin-Film of Si by micro-Sputtering"Proc. Of the 45th Japaneese Joint Conf. for The Applied Physics.. 68. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] 秋元大基,大久保淳一: "マイクロスパッタリングによる炭素系薄膜の形成" 東京理科大学工学部第2部電気工学科卒論要旨集. 176-180 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 一森照光,斉藤慎二: "マイクロスパッタリングによるSi薄膜の形成" 東京理科大学工学部第2部電気工学科卒論要旨集. 171-175 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 草垣 明(中山登史男): "ペニング放電スパッタリング法による連続薄膜形成装置の試作および薄膜形成" 山口東京理科大学 平成10年度卒業研究論文. 1 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 中山登史男・西川英一 他: "マイクロスパッタリングによるカーボン系薄膜の作成" 真空. (3月号予定). (1999)

    • Related Report
      1997 Annual Research Report
  • [Publications] 中山登史男・西川英一 他: "微小部位への耐蝕性シリコン系薄膜の形成" 表面科学. (7月号予定). (1999)

    • Related Report
      1997 Annual Research Report

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Published: 1997-04-01   Modified: 2016-04-21  

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