プラズマプロセスにより作製したシリコン量子ドットの物性評価と電子デバイスへの応用

• Project/Area Number: 09750343
• Research Category: Grant-in-Aid for Encouragement of Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: Electronic materials/Electric materials
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: 伊藤 明 東工大, 工学部, 助手 (30282833)
• Project Period (FY): 1997
• Project Status: Completed (Fiscal Year 1997)
• Budget Amount: ¥1,900,000 (Direct Cost: ¥1,900,000); Fiscal Year 1997: ¥1,900,000 (Direct Cost: ¥1,900,000)