高誘電体薄膜の超高清浄シリコン基板上への形成

• Project/Area Number: 09750380
• Research Category: Grant-in-Aid for Encouragement of Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: 電子デバイス・機器工学
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: 大見 俊一郎 東工大, 精密工学研究所, 助手 (30282859)
• Project Period (FY): 1997
• Project Status: Completed (Fiscal Year 1997)
• Budget Amount: ¥1,200,000 (Direct Cost: ¥1,200,000); Fiscal Year 1997: ¥1,200,000 (Direct Cost: ¥1,200,000)