• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

局所酸化濃縮による歪みGe-On-Insulator基板の形成

Research Project

Project/Area Number 09F09271
Research Category

Grant-in-Aid for JSPS Fellows

Allocation TypeSingle-year Grants
Section外国
Research Field Applied materials science/Crystal engineering
Research InstitutionKyushu University

Principal Investigator

中島 寛  九州大学, 産学連携センター, 教授

Co-Investigator(Kenkyū-buntansha) YANG H  九州大学, 産学連携センター, 外国人特別研究員
Project Period (FY) 2009 – 2011
Project Status Completed (Fiscal Year 2011)
Budget Amount *help
¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 2011: ¥900,000 (Direct Cost: ¥900,000)
Fiscal Year 2010: ¥900,000 (Direct Cost: ¥900,000)
Fiscal Year 2009: ¥300,000 (Direct Cost: ¥300,000)
Keywords半導体物性 / 電子・電気材料 / 結晶工学 / 先端機能デバイス / 絶縁膜
Research Abstract

本研究では、SOI上にSiGe結晶薄膜をエピタキシャル成長させ、それを酸化することにより歪みSiGe-On-Insulator(SGOI)基板を作成する手法の確立を目的としている。H23年度は、SGOI層への歪み制御の研究を実施し、以下の成果を得ている。
(1)SGOI層への歪み導入のため、初期Si_<0.93>Ge_<0.07>膜厚の異なる基板(初期膜厚:80、160、250、400nm)をGe濃度50%まで濃縮(濃縮後膜厚:11、23、35、56nm)し、歪み率(εc)と正孔移動度(μh)との相関を調べた。その結果、SiGe膜厚が薄い程、高いεcと高いμhを有する基板が形成できることを示した。これは、高い圧縮歪みと高い結晶性に起因する。
(2)初期Si_<0.93>Ge_<0.07>膜厚が80nmの基板に対して、酸化濃縮によりGe濃度の異なるSGOI基板を作成し、εcのGe濃度依存性を調べた。その結果、εcはGe濃度が50%以上で急激に低下して歪みが緩和すること、それに伴って積層欠陥や微小な双晶等の欠陥が生成されることを明らかにした。
(3)FhのGe濃度依存性は、Ge濃度50%以上でほぼ一定値(μh=570cm^2/Vs)に保たれた。これは、Geの高濃度化による移動度向上、歪み効果の低減による移動度劣化が共存した結果と解釈される。従って、高品質SGOI形成にはGe濃度50%が最適で、その場合のεcとμhはそれぞれ1.7%と570cm^2/Vsである。

Current Status of Research Progress
Current Status of Research Progress

2: Research has progressed on the whole more than it was originally planned.

Reason

歪みによる移動度向上は、歪みSGOI基板の作製プロセスを適正化してSi比で3倍を達成した。

Strategy for Future Research Activity

歪みSGOI基板に関する研究は完了とする。初期SiGe膜厚と歪み、移動度との相関が明確化したので、新たな研究要素はない。今後は、Geの局所領域に歪みを導入して移動度向上を図る。

Report

(3 results)
  • 2011 Annual Research Report
  • 2010 Annual Research Report
  • 2009 Annual Research Report
  • Research Products

    (24 results)

All 2011 2010 2009 Other

All Journal Article (10 results) (of which Peer Reviewed: 9 results) Presentation (11 results) Remarks (3 results)

  • [Journal Article] Influence of SiGe layer thickness and Ge fraction on compressive strain and holemobility in a SiGe-on-insulator substrate fabricated by the Ge condensation technique2011

    • Author(s)
      H.Yang, D.Wang, H.Nakashima
    • Journal Title

      Thin Solid Films

      Volume: Vol.520,No.8 Issue: 8 Pages: 3283-3287

    • DOI

      10.1016/j.tsf.2011.10.078

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effect of Al2O3 Deposition and Subsequent Annealing on Passivation of Defectsin Ge-rich SiGe-on-Insulator2011

    • Author(s)
      H.Yang, M.Iyota, S.Ikeura, D.Wang, H.Nakashima
    • Journal Title

      Key Engineering Material

      Volume: Vol.470 Pages: 79-84

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al2O3 deposition and subsequent post-annealing2011

    • Author(s)
      H.Yang, M.Iyota, S.Ikeura, D.Wang, H.Nakashima
    • Journal Title

      Solid State Electronics

      Volume: 印刷中

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Defect evaluation and control of SiGe-on-insulator substrate fabricated by the Gecondensation technique2010

    • Author(s)
      H.Yang, D.Wang, H.Nakashima
    • Journal Title

      Proceeding of The Forum on the Science and Technology of Silicon Materials 2010

      Pages: 438-448

    • Related Report
      2010 Annual Research Report
  • [Journal Article] Hole-Mobility Enhancement in Ultrathin Strained Si_0.5Ge_0.5-on-Insulator Fabricated by Ge Condensation Technique2010

    • Author(s)
      H.Yang, D.Wang, H.Nakashima
    • Journal Title

      Proceeding of 10th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2010)

      Volume: O05_06 Pages: 1-3

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Defect characterization and control for SiGe-on-insulator (Invited)2010

    • Author(s)
      D.Wang, H.Yang, H.Nakashima
    • Journal Title

      Proceeding of 10th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2010)

      Volume: I12_08 Pages: 1-4

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Passivation of Electrically Active Defects in Ge-Rich SiGe-on-Insulator by Al2O3 Deposition and Subsequent Post-Deposition Annealing2010

    • Author(s)
      H.Yang, M.Iyota, S.Ikeura, D.Wang, H.Nakashima
    • Journal Title

      Applied Physics Express

      Volume: Vol.3 Pages: 71302-71303

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Defect control by Al-deposition and the subsequent post-annealing for SiGe-on-in sulator substrates with different Ge fractions2010

    • Author(s)
      H.Yang, D.Wang, H.Nakashima, K.Hirayama, S.Kojima, S.Ikeura
    • Journal Title

      Thin Solid Films Vol.518

      Pages: 2342-2345

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Defect-Induced Deep Levels in SiGe-On-Insulator Substrate Fabricated using Ge Condensation Technique2009

    • Author(s)
      H.Yang, D.Wang, H.Nakashima
    • Journal Title

      Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials

      Pages: 396-397

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Optical and Electrical Characterization of Defects in SiGe-on-Insulator2009

    • Author(s)
      H.Nakashima, D.Wang, H.Yang
    • Journal Title

      The Electrochemical Society Transactions Vol.25, No.7

      Pages: 99-114

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Presentation] Mobility and strain evaluations of SiGe-on-insulator substrates with different SiGe layer thickness and Ge fraction2011

    • Author(s)
      H.Yang, D.Wang, H.Nakashima
    • Organizer
      7^<th> Int.Conf.on Si Epitaxy and Heterostructures
    • Place of Presentation
      Leuven, Belgium
    • Year and Date
      2011-08-29
    • Related Report
      2011 Annual Research Report
  • [Presentation] Defect evaluation and control of SiGe-on-insulator substrate fabricated by the Gecondensation techniaue2010

    • Author(s)
      H.Yang, D.Wang, H.Nakashima
    • Organizer
      The Forum on the Science and Technology of Silicon Materials
    • Place of Presentation
      岡山大学
    • Year and Date
      2010-11-15
    • Related Report
      2010 Annual Research Report
  • [Presentation] Hole-Mobility Enhancement in Ultrathin Strained Si_<0.5>Ge_<0.5>-on-Insulator Fabricated by Ge Condensation Technique2010

    • Author(s)
      H.Yang, D.Wang, H.Nakashima
    • Organizer
      The 10th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2010)
    • Place of Presentation
      Shanghai, China
    • Year and Date
      2010-11-04
    • Related Report
      2010 Annual Research Report
  • [Presentation] Defect characterization and control for SiGe-on-insulator (Invited)2010

    • Author(s)
      D.Wang, H.Yang, H.Nakashima
    • Organizer
      The 10th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2010)
    • Place of Presentation
      Shanghai, China
    • Year and Date
      2010-11-04
    • Related Report
      2010 Annual Research Report
  • [Presentation] 酸化濃縮SiGe-On-lnsulator基板の欠陥評価と制御2010

    • Author(s)
      中島寛、楊海貴、王冬
    • Organizer
      日本学術振興会「結晶加工と評価技術第145委員会」第124回研究会
    • Place of Presentation
      明治大学
    • Year and Date
      2010-10-19
    • Related Report
      2010 Annual Research Report
  • [Presentation] Effect of Al_2O_3 deposition and the subsequent annealing on passivation of defects in Ge-rich SiGe-on-insulator2010

    • Author(s)
      H.Yang, D.Wang, H.Nakashima
    • Organizer
      International Symposium on Technology Evolution for Silicon Nano-Electronics
    • Place of Presentation
      東京工業大学
    • Year and Date
      2010-06-03
    • Related Report
      2010 Annual Research Report
  • [Presentation] Effective Passivation of defects in Ge-rich SiGe-on-insulator substrates by Al_2O_3 deposition and the subsequent post-annealing2010

    • Author(s)
      H.Yang, D.Wang, H.Nakashima
    • Organizer
      5th International SiGe Technology and Device Meeting
    • Place of Presentation
      Stockholm, Sweden
    • Year and Date
      2010-05-25
    • Related Report
      2010 Annual Research Report
  • [Presentation] Al_2O_3PDAによる酸化濃縮SiGe-On-Ihsulator基板中の欠陥制御2010

    • Author(s)
      井餘田昌俊、池浦奨悟、楊海貴、王冬、中島寛
    • Organizer
      2010年春季第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-17
    • Related Report
      2009 Annual Research Report
  • [Presentation] 酸化濃縮法で作成したSiGe-On-Ihsulator基板中の欠陥制御2009

    • Author(s)
      井餘田昌俊、池浦奨悟、楊海貴、王冬、中島寛
    • Organizer
      2009年応用物理学会九州支部学術講演会
    • Place of Presentation
      熊本大学
    • Year and Date
      2009-11-22
    • Related Report
      2009 Annual Research Report
  • [Presentation] Defect-Induced Deep Levels in SiGe-on-Insulator Substrate Fabricated using Ge Condensation Technique2009

    • Author(s)
      H.Yang, D.Wang, H.Nakashima
    • Organizer
      2009 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Sendai, Japan
    • Year and Date
      2009-10-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] Optical and Electrical Characterizations of Defects in SiGe-on-Insulator(Invited)2009

    • Author(s)
      H.Nakashima, D.Wang, H.Yang
    • Organizer
      216^<th> Electrochemical Society Meeting
    • Place of Presentation
      Vienna, Austria
    • Year and Date
      2009-10-06
    • Related Report
      2009 Annual Research Report
  • [Remarks]

    • URL

      http://astec.kyushu-u.ac.jp/nakasima/naka_home.htm

    • Related Report
      2011 Annual Research Report
  • [Remarks]

    • URL

      http://astec.kyushu-u.ac.jp/nakasima/naka_home.htm

    • Related Report
      2010 Annual Research Report
  • [Remarks]

    • URL

      http://astec.kyushu-u.ac.jp/nakasima/naka_home.htm

    • Related Report
      2009 Annual Research Report

URL: 

Published: 2009-04-01   Modified: 2024-03-26  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi