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Control of Silicon quantum structures and its application to room-temperature device operation

Research Project

Project/Area Number 10305026
Research Category

Grant-in-Aid for Scientific Research (A).

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionHIROSHIMA UNIVERSITY

Principal Investigator

MIYAZAKI Seiichi  Facul.Eng., HIROSHIMA UNIVERSITY, Associate Professor, 工学部, 助教授 (70190759)

Co-Investigator(Kenkyū-buntansha) MURAKAMI Hideki  Facul.Eng., HIROSHIMA UNIVERSITY, Research Associate, 工学部, 助手 (70314739)
KOHNO Atsushi  Fukuoka University, Facul.Science, Lecturer, 理学部, 講師 (30284160)
Project Period (FY) 1998 – 2000
Project Status Completed (Fiscal Year 2000)
Budget Amount *help
¥36,600,000 (Direct Cost: ¥36,600,000)
Fiscal Year 2000: ¥8,600,000 (Direct Cost: ¥8,600,000)
Fiscal Year 1999: ¥11,900,000 (Direct Cost: ¥11,900,000)
Fiscal Year 1998: ¥16,100,000 (Direct Cost: ¥16,100,000)
KeywordsSilicon / Quantum Effect / Quantum Dots / Low Pressure CVD / Location Control / Scanning Probe Microscope / Tunnel Current / 量子構造 / 自己組織化形成 / 原子間力顕微鏡 / 選択成長 / 表面化学結合
Research Abstract

Self-assembling formation of silicon quantum dots (SiQDs) on ultrathin SiO_2 by low pressure CVD using silane (SiH_4) has been studied, and the formation mechanism for positioning SiQDs has been proposed and a practical process to control the arrangement of the SiQDs has been developed. In addition, for multiply-stacked SiQDs covered with very thin SiO_2, specific non-linear conductance and its temporal variation have been measured at room temperature. The major results and achievements of this research are as follows :
(1) Since Si-OH bonds on the SiO_2 surface act as reactive sites in SiH_4-LPCVD, the position control of the Si-OH bonds enables us to control the arrangement of the SiQDs on SiO_2.
(2) Area-selective nucleation for the Si dot arrangement is degraded seriously by surface contamination due to physisorption of hydrocarbons and/or water molecules, which is inevitable in exposure to clean room air.
(3) Surface modification techniques using a scanning probe microscope such as A … More FM or STM have been applied to form the Si-OH bonds out the SiO_2 surface intentionally at a certain position or area. Based on these techniques, a contamination-free process for the selective nucleation has been developed to realize highly-selective growth and precise positioning of the SiQDs.
(4) The double barrier structures of a SiQDs array sandwiched with ultrathin SiO_2 layers have been characterized by simultaneously-measured AFM topographic and current images, The results show that the resonant tunneling through each of the SiQDs depends on not only the dot size but also the difference in electron charging among the neighboring dots.
(5) The amount of electron charging into the SiQDs can be derived from the change in the local surface potential measured by operating an AFM tip with a Kelvin probe mode.
(6) The electron transport through multiply-stacked SiQDs covered with SiO_2, which were prepared by repeating the dot formation and the surface oxidation, has been studied and distinct random telegraph noise (RTN) in tunneling current, through coupled SiQDs has been measured even at room temperature. The bias voltage dependence of the frequency and the current variation in the RTN suggests that the observed RTN phenomenon can be interpreted in terms of electron charging and discharging in the dots being the neighbor of the tunneling path for coupled quantum dots. Less

Report

(4 results)
  • 2000 Annual Research Report   Final Research Report Summary
  • 1999 Annual Research Report
  • 1998 Annual Research Report
  • Research Products

    (43 results)

All Other

All Publications (43 results)

  • [Publications] 宮崎誠一: "シリコン量子ドットの自己組織化形成と発光特性"応用物理. 67・7. 807-811 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] A.Kohno: "Single Electron Charging to a Si Quantum Dot Floating Gate in MOS Structures"Ext.Abs.of the 1998 Int.Conf.on Solid State Deices and Materials. 174-175 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] S.A.Ding: "Quantum confinement effect in self-assembled nanometer silicon dots"Applied Physics Letters. 73. 3881-3883 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] S.Miyazaki: "Self-Assemblling of Si Quantum Dots and Ites Application to Floating Gate MOS Memory"Proc.of Intern.Microprocesses and Nanotechnology Conf.. 84-85 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] S.Miyazaki: "Luminescence Study of Self-ASssembled Silicon Quantum Dots"Mat.Res.Soc.Symp.Proc.. 536. 44-50 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] S.Miyazaki: "Nucleation Site Control in Self-Assembling of Silicon Quantum DOts on Ultrathin SiO_2/c-Si"Abstracts of Intern.Symp.on Surface Science for Micro-and Nano-Device Fabrication. Tu-2-C-3 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] N.Shimizu: "Charging States of Si Quantum Dots as Detected by AFM/Kelvin Prove Technique"Japanese Journal of Applied Physics. 39.4B. 2318-2320 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] S.Miyazaki: "Control of Self-Assembling Formation of Nanometer Silicon Dots by Low Pressure Chemical Vapor Deposition"Thin Solid Films. 369. 55-59 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] M.Hirose: "Tunneling in Ultrathin Gate Oxides and Related Properties of Silicon Nanodevices"Abstracts of Silicon Nanoelectronics Workshop. 6-6A (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] A.Kohno: "Transient Characteristics of Electron Charging in Si-Quantum-Dots Floating Gate MOS Memories"Ext.Abs.of the 2000 Int.Conf.on Solid State Devices and Materials. 124-125 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] S.Miyazaki: "Nucleation Site Control in Self-Assembling Si Quantum Dots on Ultrathin SiO_2/c-Si"Proc.of 25th Int.Conf.on the Physics of Semiconductors. (to be published). (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 香野淳: "シリコン量子ドットフローティングゲートMOS構造の電子注入とメモリ機能"信学技報. 103-108 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] S.Miyazaki: "Self-Assembling formation of silicon quantum dots and thir luminescence properties"OYOBUTSURI. 807-811 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] A.Kohno: "Single Electron Charging to a Si Quantum Dot Floating Gate in MOS Structures"Ext.Abs.of the 1998 Int.Conf.on Solid State Deices and Materials. 174-175 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] S.A.Ding: "Quantum confinement effect in self-assembled nanometer silicon dots"Applied Physics Letters. 73. 3881-3883 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] S.Miyazaki: "Self-Assemblling of Si Quantum Dots and Ites Application to Floating Gate MOS Memory"Proc.of Intern.Microprocesses and Nanotechnology Conf.. 84-85 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] S.Miyazaki: "Luminescence Study of Self-ASssembled Silicon Quantum Dots"Mat.Res.Soc.Symp.Proc.. 536. 44-50 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] S.Miyazaki: "Nucleation Site Control in Self-Assembling of Silicon Quantum DOts on Ultrathin SiO_2/c-Si"Abstracts of Intern.Symp.on Surface Science for Micro- and Nano-Device Fabrication. Tu-2-C-3. (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] N.Shimizu: "Charging States of Si Quantum Dots as Detected by AFM/Kelvin Prove Technique"Japanese Journal of Applied Physics. 39.4B. 2318-2320 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] S.Miyazaki: "Control of Self-Assembling Formation of Nanometer Silicon Dots by Low Pressure Chemical Vapor Deposition"Thin Solid Films. 369. 55-59 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] M.Hirose: "Tunneling in Ultrathin Gate Oxides and Related Properties of Silicon Nanodevices"Abstracts of Silicon Nanoelectronics Workshop. 6-6A. (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] A.Kohno: "Transient Characteristics of Electron Charging in Si-Quantum-Dots Floating Gate MOS Memories"Ext.Abs.of the 2000 Int.Conf.on Solid State Devices and Materials. 124-125 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] S.Miyazaki: "Nucleation Site Control in Self-Assembling Si Quantum Dots on Ultrathin SiO_2/c-Si"Proc.of 25th Int.Conf.on the Physics of Semiconductors. (to be published). (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] A.Kohno: "Electron charging characteristics and memory function of silicon quantum-dot floating gate MOS structures"Technical Report of Institute of Electronics, Information and Communication Engineering. 103-108 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] N.Shimizu: "Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique"Japanese Journal of Applied Physics. 39,4B. 2318-2320 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] S.Miyazaki: "Control of Self-Assebling Formation of Nanometer Silicon Dots by Low Pressure Chemical Vapor Deposition"Thin Solid Films. 369. 55-59 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] M.Hirose: "Tunneling in Ultrathin Gate Oxides and Related Properties of Silicon Nanodevices"Abstracts of Silicon Nanoelectronics Workshop. 6-6A (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] A.Kohno: "Transient Characteristics of Electron Charging in Si-Quantum-Dots Floating Gate MOS Memories"Ext.Abs.of the 2000 Int.Conf.on Solid State Devices and Materials. 124-125 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] S.Miyazaki: "Nucleation Site Control in Self-Assembling Si Quantum Dots on Ultrathin SiO_2/c-Si"Proc.of 25th Int.Conf.on the Physics.of Semiconductors. (印刷中). (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] Seiichi Miyazaki: "Silf-Assembling of Silicon Quantum Dots and Its Application to Floating Gate Memory"Digest of Papers of 1999 Intern.Microprocesses and Nanotechnology Conf.. 84-85 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] Naoji Shimizu: "Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique"Extended Abstract of Intern. Conf. on Solid State Devices and Materials. 80-81 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] Seiichi Miyazaki: "Nucleation Site Control in Self-Assembling of Si Quantum Dots on Ultrathin SiO_2/c-Si"Abstracts of Intern.Symp. on Surface Sci. for Micro and Nano-Device Fabrication. 102-103 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] Seiichi Miyazaki: "Self-Assembling of Si Quantum Dots-Nucleation Site,Size and Areal Density Control-"Abstracts of Workshop on Silicon Nanodevices. 1-4 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] Seiichi Miyazaki: "Luminescence Study of Self-Assembled Silicon Quantum Dots"Mat.Res.Soc.Symp.Proc.. 536. 45-50 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] Seiichi Miyazaki: "Control of Self-Assembling Formation of Nanometer Silicon Dots by Low Pressure Chemical Vapor Deposition"Thin Solid Films. (印刷中). (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] Naoji Shimizu: "Charging States of Si Quantum Dots as Detected by the AFM/Kelvin Probe Technique"Jpn.J.Appl.Phys.. (印刷中). (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] Seiichi Miyazaki: "Self-Assembling of Sl Quantum Dots and Its Application to Floating Gate Memory(invited)" Proc.of Intern.Microprocesses and Nanotechnology Conf.(1999)

    • Related Report
      1998 Annual Research Report
  • [Publications] Khairurrijal: "Electron Field Emission from a Silicon Substrate Based on a Generalized Airy Function Approach" J.Vac.Sci.Technol.B17(2). (1999)

    • Related Report
      1998 Annual Research Report
  • [Publications] Seiichi Miyazaki: "Luminescence Study of Self-Assembled,Silicon Quantum Dots" Mat.Res.Soc.Symp.Proc.536. (1999)

    • Related Report
      1998 Annual Research Report
  • [Publications] Seiichi Miyazaki: "Optical Properties of Self-Assembled,Nanometer Silicon Dots" Proc.of the 5th China-Japan Symp.on Thin Films. 37-42 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] Sun-an Ding: "Quantum Confinement Effect in Self-Assembled,Nanometer Silicon Dots" Appl.Phys.Lett.73. 3881-3883 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] Astushi Kohno: "Single Electron Charging to a Si Quantum Dot Floating Gate in MOS Structures" Extende Abstracts of the 1998 Intern.Conf.on Solid State Devices and Materials. 174-175 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 宮崎 誠一(Seiichi Miyazaki): "シリコン量子ドットの自己組織化形成と発光特性" 応用物理. 第67巻 第7号. 807-811 (1998)

    • Related Report
      1998 Annual Research Report

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Published: 1998-04-01   Modified: 2016-04-21  

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