| Project/Area Number |
10305029
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| Research Category |
Grant-in-Aid for Scientific Research (A).
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | Osaka University |
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Principal Investigator |
GAMO Kenji Osaka University, Graduate School of Engineering Science, Professor, 大学院・基礎工学研究科, 教授 (70029445)
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| Co-Investigator(Kenkyū-buntansha) |
WAKAYA Fujio Osaka University, Graduate School of Engineering Science, Research Associate, 大学院・基礎工学研究科, 助手 (60240454)
YANAGISAWA Junichi Osaka University, Graduate School of Engineering Science, Lecturer, 大学院・基礎工学研究科, 講師 (60239803)
YUBA Yoshihiko Osaka University, Graduate School of Engineering Science, Associate Professor, 大学院・基礎工学研究科, 助教授 (30144447)
IWABUCHI Shuichi Nara Women's University, Faculty of Science, Professor, 理学部, 教授 (40294277)
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| Project Period (FY) |
1998 – 2000
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| Project Status |
Completed (Fiscal Year 2000)
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| Budget Amount *help |
¥29,600,000 (Direct Cost: ¥29,600,000)
Fiscal Year 2000: ¥4,400,000 (Direct Cost: ¥4,400,000)
Fiscal Year 1999: ¥12,600,000 (Direct Cost: ¥12,600,000)
Fiscal Year 1998: ¥12,600,000 (Direct Cost: ¥12,600,000)
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| Keywords | single-electron transistor / Coulomb blockade / environmental impedance / ultra-small tunnel junction / electromagnetic environment effect |
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| Research Abstract |
In order to discuss the effects of environmental impedance on Coulomb blockade, we established a basic theory in which we can calculate transport properties of a single-electron transistor (SET) with arbitrary environmental impedance. We calculated numerically transport properties of SETs self-consistently and showed that SETs can be controlled by environmental impedance modulation. Moreover, we estimated the maximum parasitic capacitance, because environmental impedance becomes low due to parasitic capacitance in actual devices.
We fabricated SETs controlled by environmental impedance modulation, using a GaAs/AlGaAs heterostructure and electron-beam lithography technique and measured transport properties at low temperature. We succeeded in controlling actually the transport properties by modulating the environmental impedance.
We also fabricated SETs with different parasitic capacitance and showed that SET can not be controlled when the capacitance becomes large.
We established a theory for three-terminal devices in which all charges and environmental impedances were treated quantum mechanically. Using the theory, we discussed charge fluctuations and asymmetric environment effects.
Controlling charge fluctuations is quite important in single electronics because SETs are severely affected by charge fluctuation.
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