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Silicon Self-Diffusion Using Isotopically Enriched ^<28>Si Epitaxial Layers

Research Project

Project/Area Number 10305030
Research Category

Grant-in-Aid for Scientific Research (A).

Allocation TypeSingle-year Grants
Section一般
Research Field 電子デバイス・機器工学
Research InstitutionKeio University

Principal Investigator

MATSUMOTO Satoru  Keio University, Facaluty of Science and Technology, Professor, 理工学部, 教授 (00101999)

Co-Investigator(Kenkyū-buntansha) ITOH Kohei  Keio University, Facaluty of Science and Technology, Assistant Professor, 理工学部, 専任講師 (30276414)
KUWANO Hiroshi  Keio University, Facaluty of Science and Technology, Professor, 理工学部, 教授 (10051525)
Project Period (FY) 1998 – 2000
Project Status Completed (Fiscal Year 2000)
Budget Amount *help
¥39,600,000 (Direct Cost: ¥39,600,000)
Fiscal Year 2000: ¥10,600,000 (Direct Cost: ¥10,600,000)
Fiscal Year 1999: ¥11,600,000 (Direct Cost: ¥11,600,000)
Fiscal Year 1998: ¥17,400,000 (Direct Cost: ¥17,400,000)
Keywordssilicon / self-diffusion / enriched isotope / point defect / vacancy / self-interstitial / Fermi level effect / process modeling / 格子間原子
Research Abstract

In Si LSI process such as oxidation, ion implantation and so on, point defects (vacancy and Si self-interstitial) exist in non-thermal state. With the shirink of device dimension, control of these processes becomes more and more important. Generally, the behavior of point defects in semiconductor can be investigated by self-diffusion. However, it is very difficult to perform the experiment on self-diffusion in Si because of its very short half life. In this work, we determined Si self diffusion coefficient using isotopically enriched ^<30>SiH_4 gas source and clarified the role of point defects in Si self-diffusion. Main results of the work are as follows. (i) We succeeded to grow the isotopically pure ^<30>Si epitaxial layers for the first time. (ii) Using the hetero-structures of ^<30>Si/ natural Si, Si self diffusion coefficient was determined at temperatures of 850-1050℃ by estimating the ^<30>Si concentration profiles in natural Si with SIMS.(iii) Doping dependence on Si self diffusion (Fermi level effect) was investigated and clarified the role of point defect on Si self diffusion. Three different Si substrates (heavily As doped Si=3x10^<19>cm^<-3>, heavijy B doped Si=2x10^<19>cm^<-3>, and B doped Si=1x10^<16>cm^<-3>) were prepared. Si self-diffusion coefficient in extrinsic p-type Si is twice larger than that of intrinsic Si, while self diffusion coefficient in extrinsic n-type Si is almost same as that of intrinsic Si. In extrinsic n-type Si, excess vacancies exist due to the Fermi level effect. However the present results indicate that the role of vacancy on Si self-diffusion is very small at lower temperatures (850, 900℃) because of little influence of heavily n-type doping on self-diffusion coefficient. It clarifies that the general opinion-vacancy is dominant in Si self-diffusion at lower temperature region-cannot hold.

Report

(4 results)
  • 2000 Annual Research Report   Final Research Report Summary
  • 1999 Annual Research Report
  • 1998 Annual Research Report
  • Research Products

    (82 results)

All Other

All Publications (82 results)

  • [Publications] Y.Nakabayashi: "Self-Diffusion in Extrinsic Silicon Using Isotopically Enriched ^<30>Si Layer"Jpn.J.Appl.Phys.. 40. (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Nakabayashi: "Epitaxial Growth of ^<30>Si Layers on a Natural Si(100) Substrate Using Enriched ^<30>SiH_4"Jpn.J.Appl.Phys. 39. L1133-L1134 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Tsubo: "Phosphorus Diffusion from Doped Polysilicon through Ultra-Thin SiO_2 Films into Si substrate"Jpn.J.Appl.Phys. 39. L955-L957 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.Yamamoto: "Effect of Boron on Solid Phase Epitaxy of Ge on Si(111) surface"Jpn.J.Appl.Phys. 39. 4545-4548 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.Ezoe: "The effect of elevated silicon substrate temperature on TiSi_2 formation from a Ti film"Thin Solid Films. 369. 244-247 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.Akane: "Characterization of gas-source MBE growth of strain-compensated Si GeC/Si(001)"J.Crystal Growth. 203. 80-86 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.Yamamoto: "Initial stage of Si(111)-B surface reconstruction studied by scanning tunneling microscopy"Appl.Surf.Sci.. 130-132. 1-4 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] S.Matsumoto: "Stress in Silicon Nitride Films and its Effect on Boron Diffusion in Silicon"Defect and Diffusion Forum. 153-155. 25-45 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.Ishii: "Growth of Ge on H-terminated Si(111) surface"Thin Solid Films. 336. 34-38 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.Ishikawa: "Low temperature epitaxial growth of Si on Si(111) by gas-source MBE with heat-pulse annealing"Thin Solid Films. 336. 232-236 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.Ezoe: "Scanning tunneling microscopy study of initial growth of titanium silicide on Si(111)"Appl.Surf.Sci. 130-132. 13-17 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] H.Okumura: "Low temperature growth of Si on Si(111) by gas-source MBE with rapid thermal annealing"Appl.Sur.Sci. 135. 121-125 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.Shimizu: "Fraction of Interstitialcy Component of Phosphorus and Antimony Diffusion in Silicon"Jpn.J.Appl.Phys.. 37. 1184-1189 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Zaitsu: "Boron Diffusion in Compressively Stressed FZ-Si induced by Si_3N_4 Films"J.Electrochem. Soc.. 145. 258-263 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] J.W.Seo: "Lateral Solid Phase Recrystallization from the crystal Seed in Ge-Ion-Implanted Amorphous Silicon Films"Jpn.J.Appl.Phys.. 40. (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] J.W.Seo: "Lateral Solid-Phase Recrystallization from the crystal Seed Selectively Formed by Excimer Laser Annealing"Jpn.J.Appl.Phys.. 39. 5063-5068 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] W.J.Cho: "Effects of Denudation Anneal of Silicon Wafer on the characteristics of Ultra Large-Scale Integration Devices"Jpn.J.Appl.Phys. 39. 3277-3280 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] H.Takahashi: "Origination of Infrared Photoluminescence of Nanocrystalline Si in SiO_2 Films"Jpn.J.Appl.Phys. 39. 3473-3477 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] W.J.Cho: "Effects of crystal originated particles on Breakdown characteristics of ultra thin gate oxide"Jpn.J.Appl.Phys.. 38. 6184-6187 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] J.W.Seo: "Lateral Solid Phase Recrystallization from the crystal Seed Selectvely Formed by Excimer Laser Annealing in Ge-Ion Implanted a-Si Films"J.Electrochem. Soc.. 98-22. 51-59 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.M.Itoh: "Isotopically Engineered Semiconductors"Physica E. (in printing). (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] M.Watanabe: "Localization Length and Impurity Dielectric Susceptibility in the Critical Regine of the Metal-Insulator Transition"Phys.Rev.B. B62. R2255-R2258 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] M.Nakajima: "Comparison of Coherent and Inoherent LO Phonons in Isotope ^<70>Ge/^<74>Ge Superlattice"J.dumia. 87-89. 942-944 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.Takyu: "Growth and Characterization of the Istopically Enriched ^<28>Si Bulk Single Crystal"Jpn.J.Appl.Phys. 38. L1493-L1495 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] M.Watanabe: "Critical Exponent for Localization Length in Neutron-Transmutation-Doped ^<70>Ge:Ga"Ann.Phys.. 8. 273-276 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 伊藤公平: "半導体同位体工学"固体物理. 33. 965-978 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.Morita.: "Growth and characterization of ^<70>Ge/^<74>Ge I sotope superlattice."Thin Solid Films. 369. 405-408 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 松本智(分担): "「半導体大事典」"工業調査会. 2011(437-446) (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 松本智(分担): "「次世代ULSIプロセス技術」"(株)リアライズ. 825(319-324) (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] S.Matsumoto(分担): "ENCYCLO PEDIA OF MATERIALS : Science and Technology"PERGAMON (全11巻)(未定). (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Nakabayashi, T.Segawa, O.Hirman and S.Matsumoto, J.Murota, K.Wada and T.Abe: "Self-Diffusion in Extrinsic Silicon Using Isotopically Enricjed ^<30>Si Layer"Jpn.J.Appl.Phys.. Vol.40. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Nakabayashi, T.Segawa, O.Hirman and S.Matsumoto, J.Murota, K.Wada and T.Abe: "Epitaxial Growth of ^<30>Si Using Enriched ^<30>SiH_4"Jpn.J.Appl.Phys.. Vol.39. 1133-1134 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Tsubo, K..Saitou, S.Matsumoto: "Phosphorus Diffusion from Doped Polysilicon through Ultra-Thin SiO2 Films into Si Substrates"Jpn.J.Appl.Phys.. Vol.39. L955-957 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.Yamamoto, K.Ezoe, K.Ishii and S.Matsumoto: "Effect of Boron on Solid Phase Epitaxy of Ge on Si (111) surface"Jpn.J.Appl.Phys.. Vol.39. 4545-4548 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.Ezoe, S.Matsumoto et al.: "The effect of elevated silicon substrate temperature on TiSi_2 formation from a Ti film"Thin Solid Films. Vol.369. 244-247 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.Akane, M.Sano, H.Okumura, T.Ishikawa and S.Matsumoto.: "Characterization of gas-source molecular beam epitaxial growth of strain-compensated SiGeC/Si (001) heterostructure"J.Crystal Growth. Vol.203. 80-86 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.Yamamoto, M.Ezoe and S.Matsumoto: "Initial stage of Si (111)-B surface reconstruction studied by scanning tunneling microscopy"Appl.Surf.Sci.. Vol.130-132. 1-4 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] S.Matsumoto, E.Arai and T.Abe: "Stress in Silicon Nitride Films and its Effect on Boron Diffusion in Silicon"Defect and Diffusion Forum. Vol.153-155. 25-45 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.Ishii, H.Kuriyama, K.Ezoe, T.Yamamoto, M.Ikeda, S.Matsumoto: "Growth of Ge on H-terminated Si (111) surface"Thin Solid Films. Vol.336. 34-38 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.Ishikawa, H.Okumura, T.Akane, S.Matsumoto: "Low temperature epitaxial growth of Si on Si (111) by gas-source MBE with heat-pulse annealing"Thin Solid Films. Vol.336. 232-236 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.Ezoe, H.Kuriyama, T.Yamamoto, S.Ohara, S.Matsumoto: "Scanning tunneling microscopy study of initial growth of titanium silicide on Si (111)"Appl.Surf.Sci.. Vol.130-132. 13-17 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] H.Okumura, T.Ishikawa, T.Akane and S.Matsumoto: "Low temperature growth Of Si on Si (111) by gas-source MBE with rapid thermal annealing : AFM study Of surface morphology"Appl.Sur.Sci.. Vol.135. 121-125 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.Shimizu, Y.Zaitsu, T.Takagi and S Matsumoto: "Fraction of Interstitialcy Component of Phosphorus and Antimony Diffusion in silicon"Jpn.J.Appl.Phys.. Vol.37. 1184-1189 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Zaitsu, T.Shimizu and S.Matsumoto: "Boron Diffusion in Compressively Stressed FZ-Si induced by Si_3N_4 Films"J.Electrochem.Soc.. 145. 258-263 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] J.W.Seo, Y.Kokubo, , and H.Kuwano et al: "Lateral Solid Phase Recrystallization from the Crystal Seed in Ge-Ion-Implanted Amorphous Silicon Films by Repitition Rapid Thermal Annealing"Jpn J.Appl.Phys. Vol.40, Part 1. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] J.W.Seo, S.Akiyama, , M.Kanaya and H.Kuwano: "Lateral Solid-Phase Recrystallization from the Crystal Seed Selectively Formed by Eximer Laser Annealing in Ge-Ion-Implanted Amorphous Silicon Films"Jpn.J.Appl.Phys.. Vol.39, Part 1. 5063-5068 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] W.J.Cho and H.Kuwano: "Effects of Denudation Anneal of Silicon Wafer on the Characteristics of Ultra Large-Scale Integration Devices"Jpn.J.Appl.Phys.. Vol.39, Part 1. 3277-3280 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] H.Takahashi, H.Kuwano et al: "Origination of Infrared Photoluminescence of Nanocrystalline Si in SiO_2 Films"Jpn.J.Appl.Phys.. Vol.39, Part 1. 3474-3477 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] W.J.Cho, K.S.Lee and H.Kuwano: "Effects of crystal originated particles on Breakdown characteristics of ultra thin gate oxide"Jpn.J.Appl.Phys. Vol.38. 6184-6187 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] J.W.Seo, Y.Aya and H.Kuwano: "Lateral Solid Phase Recrystallization (L-SPR) from the Crystal Seed Selectively Formed by Exicimer Laser Annearing (ELA) in Ge-Ion Implanted a-Si Films"J.Electrochem.Soc.Proc. 98-22. 51-59 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.M.Itoh and E.E.Haller: "Isotopically Engineered Semiconductors? New Media for the Investigation of Nuclear Spin Related Effects in Solids"Physica E.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] M.Watanabe, K.M.Itoh et al: "Localization Length and Impurity Dielectric Susceptibility in the Critical Regime of the Metal-Insulator Transition in Homogeneously Doped P-Type Ge"Phys.Rev.B. 62. R2255-R2258 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.Morita, K.M.Itoh, et al: "Growth and Characterization of 70Gen"74Gen Isotope Superlattices. Thin Solid Films 369. 405-408 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] M.Nakajma, K.M.Itoh et al: "Comparison of Coherent and Incoherent LO Phonons In Isotopic 70Ge/74Ge Superlattices"J.Lumin. 87-89. 942-944 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.Takyu, K.M.Itoh et al: "Growth and Characterization of the Isotopically Enriched 28Si Bulk Single Crystal"Jpn.J.Appl.Phys. 38. L1493-L1495 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] M.Watanabe, K.M.Itoh, Y.Ootuka, and E.E.Haller: "Critical Exponent for Localization Length in Neutron-Transmutation-Doped 70Ge : Ga"Ann.Phys. (Leipzig). 8, Spec.Issue SI-3-SI-9. 273-276 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Nakabayashi: "Self-Diffusion in Extrinsic Silicon Using Isotopically Enriched ^<30>Si Layer"Jpn.J.Appl.Phys. 40(未完). (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y.Nakabayashi: "Epitaxial Growth of Pure ^<30>Si Layers on a Natural Si(100) Substrate Using Enriched ^<30>SiH_4"Jpn.J.Appl.Phys.. 39. L1133-L1134 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y.Nakabayashi: "Silicon Self-Diffusion using enriched ^<30>SiH_4"Proc.of 3rd International Symposium on Advanced Si Materials. 146-151 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.Ishikawa: "Fabrication of boron delta-doped structures in Si by solid phase epitaxy"25th International Conference on the physics of Semiconductors. 751 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y.Tsubo: "Phosphorus Diffusion from Doped Polysilicon through Ultra-Thin SiO_2 Films into Si Substrates"Jpn.J.Appl.Phys. 39. L955-L957 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.Yamaoto: "Effect of Boron on Solid Phase Epitaxy of Ge on Si(III) surface"Jpn.J.Appl.Phys.. 39. 4545-4548 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] K.Ezoe: "The effect of elevated solicon substrate temperature on TiSi_2 formation from a Ti film"Thin solid Films. 369. 244-247 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] J.W.Seo: "Lateral Solid-Phase Recrystallization from the Crystal Seed Selectively Formed by Excimer Laser Annealing in Ge-Implanted Silicon Films"Jpn.J.Appl.Phys. 39. 5063-5068 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] W.J.Cho: "Effects of Denudation Anneal of Silicon Wafer on the Characteristics of Ultra Large-Scale Integration Devices"Jpn.J.Appl.Phys.. 39. 3277-3280 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] H.Takahashi: "Origination of Infrared Photoluminescence of Nanocrystalline Si in SiO_2 Films"Jpn.J.Appl.Phys. 39. 3474-3477 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] M.Watanabe: "Localization Length and Impurity Dielectric Susceptibility in the Critical Regime of Metal-Insulator Transition in P-Ge"Phys.Rev.. B62. R2255-R2258 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] K.Morita: "Growth and Characterization of ^<70>Ge/^<74>Ge Isotope Superlattice"Thin Solid Films. 369. 405-408 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] M.Nakajima: "Comparison of Coherent and In coherent LO Phonons in Isotopic ^<70>Ge/^<74>Ge Superlattice"J.Lumin. 87-89. 87-89 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 松本智(分担): "半導体大事典"工業調査会. 2011(437-446) (1999)

    • Related Report
      2000 Annual Research Report
  • [Publications] 松本智: "次世代ULSIプロセス技術"(株)リアライズ社. 825(319-324) (1999)

    • Related Report
      2000 Annual Research Report
  • [Publications] S.Matsumoto(分担): "ENCYCLOPEDIA OF MATERIALS : SCIENCE AND TECHNOLOGY"PERGAMON・全11巻未定. (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.Akane: "Characterization of gas-source molecular beam opitaxial growth of strain-compen sated Si_<1-x-y>GexCy/Si(001)heterostructure"Journal of Crystal Growth. 203. 80-86 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] T.Tsubo: "Phosphorus diffusion from doped poly Si through alta thir SiO_2 films into Si substrates"Proc.of the 5th Int' Sympo.on Process Physics and Modeling in Semiconductor Technology. 99-2. 116-122 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] K.Saitou: "Effect of Si_3 N_4 film on TED,Loss and Activation of P in CZ-Si"Abstract of the 1999 Joint Int' Meeting of the Electrochemical society. 1291 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] M.Tajima: "Anomalous Photoluminescence in SOI wafers and its application to wafer characterization"Abstract of 8th Int.Conf.on Defect-Recognition,Imaging and Physics in Semiconductors. 90 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] H.Okumura: "Low temperature growth of Si on Si(111) by gas-source MBE with rapid thermal annealing : AFM study on surface morphology" Applied Surface Science. 135. 121-128 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] T.Ishikawa: "Low temperature epitaxial growth of Si on Si(111) by gas-source MBE with heat-pulse annealing" Thin Solid Films. 336. 232-235 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] T.Shimizu: "Fraction of Interstitialcy Component of Phosphorus and Antimony Diffusion in Silicon" Jpn.J.Appl.Phys.Vol.37 No.3. 1184-1187 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] Y.Zaitsu: "Boron Diffusion in Compressively Stressed Float Zone-Silicon Induced by Si_3 N_4 Films" J.Electrochem.Soc.Vol.145 No.1. 258-264 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] S.Matsumoto: "Stress in Silicon Nitride Films and its Effect on Boron Diffusion in Silicon" Defects and Diffusion Forum. 153-155. 25-44 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 伊藤 公平: "半導体同位体工学" 固体物理. Vol.33 No.12. 965-978 (1998)

    • Related Report
      1998 Annual Research Report

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Published: 1998-04-01   Modified: 2016-04-21  

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