| Project/Area Number |
10355007
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (A)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 展開研究 |
|---|
| Research Field |
機械工作・生産工学
|
|---|
| Research Institution | Osaka University |
|---|
Principal Investigator |
MORI Yuzo Dep. of Precision Science and Technology, Osaka Univ. Prof., 工学研究科, 助教授 (00029125)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
SANO Yasuhisa Dep. of Precision Science and Technology, Osaka Univ. Research Asst., 工学研究科, 助手 (40252598)
YAMAMURA Kazuyz Dep. of Precision Science and Technology, Osaka Univ. Research Asst., 工学研究科, 助手 (60240074)
YAMAUCHI Kazuto Dep. of Precision Science and Technology, Osaka Univ. Assoc. Prof., 工学研究科, 助教授 (10174575)
|
|---|
| Project Period (FY) |
1998 – 1999
|
| Project Status |
Completed (Fiscal Year 1999)
|
| Budget Amount *help |
¥24,300,000 (Direct Cost: ¥24,300,000)
Fiscal Year 1999: ¥4,500,000 (Direct Cost: ¥4,500,000)
Fiscal Year 1998: ¥19,800,000 (Direct Cost: ¥19,800,000)
|
|---|
| Keywords | plasma CVM / atmospheric pressure / radical / high-speed rotary electrode / numerical controlled / synchrotron radiation / plane mirror / SOI / 薄膜化 |
|---|
| Research Abstract |
Plasma CVM is a machining method using the radical formed by the plasma over the atmospheric pressure. The very high-density radical is formed by utilizing the high pressure plasma, and it is possible to limit the plasma generation region to the vicinity of the electrode which the high electric field affects, because of the small mean free path of the gas. Therefore, it is possible to combine processing efficiency and shape control which are equal to the mechanical machining. In this study, to make the new shape generating processing system based on the purely chemical principle, following items were practiced.
1) Design and production of the numerical controlled plasma CVM machining system using the high-precise high-speed rotary electrode were carried out.
2) Basic data on each machining parameter which give large effect in the localization of machining area, machining speed and machined surface roughness, were acquired.
3) The plane mirror made of the silicon for synchrotron radiation beam line, was processed. Though the flatness of the mirror got by the mechanical polishing was 158nm (p-v), as a result of correction processing by this system, 22.5nm (p-v) was achieved.
4) Film thinning of the silicon layer in SOI (Silicon On Insulator) wafer which was next generation semiconductor substrate was done. As a result of film thinning by this system, it succeeded in thinning the SOI layer of 0.2μm thickness to 0.04μm.
|
