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Development and Photonic Integration of Efficient and Stable Silicon-Based LED

Research Project

Project/Area Number 10355015
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section展開研究
Research Field 電子デバイス・機器工学
Research InstitutionTokyo University of Agriculture & Technology

Principal Investigator

KOSHIDA Nobuyoshi  Tokyo Univ. of A&T, Prof., 工学部, 教授 (50143631)

Co-Investigator(Kenkyū-buntansha) KOYAMA Hideki  Tokyo Univ. of A&T, Res. Assoc., 工学部, 助手 (40234918)
KOMODA Takuya  Matsushita Elect. Works, Senior Researcher, ウエルラボ, 主査技師
SUDA Yoshiyuki  Tokyo Univ. of A&T, Assoc. Prof., 工学部, 助教授 (10226582)
Project Period (FY) 1998 – 1999
Project Status Completed (Fiscal Year 1999)
Budget Amount *help
¥24,500,000 (Direct Cost: ¥24,500,000)
Fiscal Year 1999: ¥3,900,000 (Direct Cost: ¥3,900,000)
Fiscal Year 1998: ¥20,600,000 (Direct Cost: ¥20,600,000)
Keywordsporous silicon / nanocrystalline silicon / quantum confinement / visible luminescence / silicon LED / quantum efficiency / optical wave guide / photonic integration / 量子効率
Research Abstract

To develop efficient and stable silicon-based LED and make the technological foundation of monolithic photonic integration more solid, experimental studies have been conducted in terms of fabrication technique, surface passivation, and related optoelectronic characterization. The major results and their significances are summarized as follows.
1. Drastic improvement in the efficiency of Si-based LEDs
By introducing a post-anodization electrochemical treatment, the leakage component in the porous silicon diode current is successfully reduced, and carrier injection into luminescent nanocrystalline silicon becomes very efficient. As a result, the external quantum efficiency is enhanced to beyond 1%. Also, an external power efficiency of 0.4% close to a practical level can be obtained from a diode with an appropriate device configuration. These are the highest values to date in this field. Some key issues for stabilization of LED operation and for tuning the emission band have also been clarified. Especially important result is that blue emission has been observed with oxide-free samples.
2. Findings of novel functions of silicon nanocrystals
From some electrical and optical investigations, it has been shown that luminescent nanocrystalline silicon exhibits various useful functions : light-emissive nonvolatile memory, ballistic electron emission, and thermally induced ultrasonic emission. Nanocrystalline silicon is very useful as a multi-functional material.
3. Toward photonic integration
The compatibility of nanocrystalline silicon with three-dimensional buried optical waveguide was examined. It has been demonstrated that a buried bent waveguide with an extremely small curvature can be fabricated by simple palanar processing. Nonlinear optical effects due to refractive index change were also observed.

Report

(3 results)
  • 1999 Annual Research Report   Final Research Report Summary
  • 1998 Annual Research Report
  • Research Products

    (48 results)

All Other

All Publications (48 results)

  • [Publications] H. Shinoda, T. Nakajima, K. Ueno, and N. Koshida: "Thermally induced ultrasonic emission from porous silicon"Nature. 400. 853-855 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] N. Koshida, X. Sheng, and T. Komoda :: "Quasiballistic electron emission from porous silicon diodes"Appl. Surf. Sci.. 146. 371-376 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] N. koshida, K. Ueno, and X. Sheng :: "Field-induced functions of porous Si as a confined system"J. Luminescence. 80. 37-42 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M. Takahashi and N. Koshida: "Fabrication and characteristics of three-dimensionally buried porous silicon optical waveguides"J. Appl. Phys.. 86. 5274-5278 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T. Komoda, X. sheng, and N. Koshida: "Mechanism of efficient and stable surface-emitting cold cathode based on porous poly-crystalline silicon films"J. Vac. Sci. Technol. B. 17. 1076-1079 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] X. Sheng, A. Kojima, T. Komoda, and N. Koshida: "Efficient and ballistic cold electron emission from porous poly-crystalline silicon diodes with a porosity multilayer structure"J. Vac. Sci. Tecnol. B. 18(in press). (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] N. Takahashi, Y. Toriumi, T. Matsumoto, Y. Masumoto, and N. Koshida: "Significant photoinduced refractive index change observed in porous silicon Fabry-Perot resonators"Appl. Phys. Lett.. 76(in press). (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] B. Gelloz and N. Koshida: "Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diodes"J. Appl. Phys.. 87(in press). (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] B. Gelloz, T. Nakagawa, and N. Koshida: "Enhancement of quantum efficiency and stability of electroluminescence from porous silicon by anodic passivation"Appl. Phys. Lett.. 73. 2021-2023 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T. Komada, X. Sheng, and N. Koshida: "Characteristics of surface-emitting cold cathode based on porous polysilicon"Mat. Res. Soc. Symp. Proc.. Vol. 509. 187-192 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] X. Sheng and N. Koshida: "Quasi-ballistic electron emission from porous silicon diodes with a graded-band multilayer structure"Mat. Res. Soc. Symp. Proc.. Vol. 509. 193-198 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] S. Tanaka, H. Koyama, and N. Koshida: "Photoluminescence decay dynamics of ion-irradiated porous silicon : Evidence for the absence of carrier migration"J. Appl. Phys.. 84. 2334-2336 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] N. Takahashi, M. Araki, and N. Koshida: "Buried optical waveguides of porous silicon"Jpn. J. Appl. Phys.. 37. L1017-L1019 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T. Matsumoto, H. Mimura, N. Koshida, and Y. Masumoto: "The density of states in silicon nanostructures determined by space-charge-limited current measurements"J. Appl. Phys.. 84. 6157-6161 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T. Nakagawa, H. Sugiyama, and N. Koshida: "Fabrication of periodic nanostructure by controlled anodization"Jpn. J. Appl. Phys.. 37. 7186-7189 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K.Ueno and N. Koshida: "Light-emissive nonvolatile memory effects in porous silicon diodes"Appl. Phys. Lett.. 74. 93-95 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] B. Gelloz, T. Nakagawa, and N. Koshida: "Enhancing the external quantum efficiency of porous silicon LEDs beyond 1% by a postanodization electrochemical oxidation"Mat. Res. Soc. Symp. Proc.. 536. 15-20 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] N. Koshida, T. Nakajima, M. Yoshiyama, K. Ueno, T. Nakagawa and H. Shinoda: "Ultrasound emissioin from porous silicon : efficient thermo-acoustic function as a depleted nanocrystalline system"Mat. Res. Soc. Symp. Proc.. 536. 105-110 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] H. Mizuno, N. Koshida: "Enhancement in efficiency and stability of oxide-free blue emission from porous silicon by surface passivation"Mat. Res. Soc. Symp. Proc.. 536. 179-284 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] H. Shinoda, T. Nakajima, K. Ueno, and N. Koshida: "Thermally induced ultrasonic emission from porous silicon"Nature. 400. 853-855 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] N. Koshida, X. Sheng, and T. Komoda: "Quasiballistic electron emission from porous silicon diodes"Appl. Surf. Sci.. 146. 371-376 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] N. Koshida, K. Ueno, and X. Sheng: "Field-induced functions of porous Si as a confined system"J. Luminescence. 80. 37-42 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M. Takahashi and N. Koshida: "Fabrication and characteristics of three-dimensionally buried porous silicon optical waveguides"J. Appl. Phys.. 86. 5274-5278 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T. Komoda, X. Sheng, and N. Koshida: "Mechanism of efficient and stable surface-emitting cold cathode based on porous polycrystalline silicon films"J. Vac. Sci. Technol. B. 17. 1076-1079 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] B. Gelloz and N. Koshida: "Enhancing efficiency and stability of electroluminescence of porous silicon using electrochemical techniques"Proc. Int. Symp. On Advanced Luminescent Materials and Quantum Confinement (ECS, 1999). 27-34

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M. Takahashi, Y. Toriumi, T. Matsumoto, Y. Masumoto, and N. Koshida: "Nonlinear refractive index change in porous silicon Fabry-Perot resonators"Proc. Int. Symp. On Advanced Luminescent Materials and Quantum Confinement (ECS, 1999). 35-42

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] N. Koshida and B. Gelloz: "Wet and Dry Porous Silicon, in "Current Opinion in Colloid and Interface Science" Vol 4/4"Ed. L. Brus (Elsevier Science, Oxford, 1999) (Review). 309-313

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] A. Kumagai, Y. Kanegawa, Y. Suda, and N. Koshida: "Improvement of porous Si luminescence intensity durability by nitrogen ion irradiation using an ECR ion source"J. Porous Materials. 7. 73-76 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] B. Gelloz, A. Bsiesy, and N. Koshida: "Conduction and luminescent properties of wet porous silicon"J. Porous matl.. 7. 103-106 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] X. Sheng, A. Kojima, T. Komoda, and N. Koshida: "Efficient and ballistic cold electron emission from porous poly-crystalline silicon diodes with a porosity multilayer structure"J. Vac. Sci. Technol. B. 18(in press). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] N. Takahashi, Y. Toriumi, T. Matsumoto, Y. Masumoto, and N. Koshida: "Significant photoinduced refractive index change observed in porous silicon Fabry-Perot resonators"Appl. Phys. Lett.. 76(in press). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] B. Gelloz and N. Koshida: "Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diodes"J. Appl. Phys.. 87(to be publised). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] H.Shinoda,T.Nakajima,K.Ueno,and N.Koshida: "Thermally induced ultrasonic emission from porous silicon"Nature. 400. 853-855 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] N.Koshida,X.Sheng,and T.Komoda:.: "Quasiballistic electron emission from porous silicon diodes"Appl.Surf.Sci.. 146. 371-376 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] N.Koshida,K.Ueno,and X.Sheng:.: "Field-induced functions of porous Si as a confined system"J.Luminescence. 80. 37-42 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] M.Takahashi and N.Koshida,: "Fabrication and characteristics of three-dimensionally buried porous silicon optical waveguides"J.Appl.Phys.. 86. 5274-5278 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] T.Komoda,X.Sheng,and N.Koshida: "Mechanism of efficient and stable surface-emitting cold cathode based on porous poly-crystalline silicon films"J.Vac.Sci.Technol.B. 17. 1076-1079 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] X.Sheng,A.Kojima,T.Komoda,and N.Koshida,: "Efficient and ballistic cold electron emission from porous poly-crystalline silicon diodes with a porosity multilayer structure"J.Vac.Sci.Technol.B. 18(in press). (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] N.Takahashi,Y.Toriumi,T.Matsumoto,Y.Masumoto,and N.Koshida: "Significant photoinduced refractive index change observed in porous silicon Fabry-Perot resonators"Appl.Phys.Lett.. 76(in press). (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] B.Gelloz and N.Koshida,,: "Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diodes"J.Appl.Phys.. 87(in press). (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] Y.Suda,K.Obata,and N.Koshida: "Band dispersions in photoluminescent porous Si" Phys.Rev.Lett.80. 3559-3562 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] B.Gelloz,T.Nakagawa,and N.Koshida: "Enhancing the external quantum efficiency of porous silicon LEDs beyond 1% by a post-anodization electrochemical oxidation" Mat.Res.Soc.Symp.Proc.536(in press). (1999)

    • Related Report
      1998 Annual Research Report
  • [Publications] H.Mizuno and N.Koshida: "Enhancement in efficiency and stability of oxide-free blue emission from porous silicon by surface passivation" Mat.Res.Soc.Symp.Proc.536(in press). (1999)

    • Related Report
      1998 Annual Research Report
  • [Publications] B.Gelloz,T.Nakagawa,and N.Koshida: "Enhancement of the quantum efficiency and stability of electroluminescence from porous silicon by anodic passivation." Appl.Phys.Lett.73. 2021-2023 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] N.Koshida,T.Nakajima,M.Yoshiyama,K.Ueno.T.Nakagawa,and H.Shinoda: "Ultrasound emission from porous silicon: Efficient thermo-acoustic function as a depleted nanocrystalline system" Mat.Res.Soc.Symp.Proc.536(in press). (1999)

    • Related Report
      1998 Annual Research Report
  • [Publications] K.Ueno and N.Koshida: "Light-emissive nonvolatile memory effects in porous silicon diodes" Appl.Phys.Lett.74. 93-95 (1999)

    • Related Report
      1998 Annual Research Report
  • [Publications] T.Matsumoto,H.Mimura,N.Koshida,and Y.Masumoto: "The density of states in silicon nanostructures determined by space-charge-limited current measurements" J.Appl.Phys.84. 6157-6161 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] M.Takahashi,M.Araki,and N.Koshida: "Buried optical waveguides of porous silicon" Jpn.J.Appl.Phys.37. L1017-L1019 (1998)

    • Related Report
      1998 Annual Research Report

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Published: 1998-04-01   Modified: 2016-04-21  

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