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Tomographic detection of micro-defects in semi-conductions due to light scattering and photoluminescence imaging

Research Project

Project/Area Number 10450011
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionGakushuin University

Principal Investigator

OGAWA Tomoya  Gakushuin University, Department of Physics, Professor, 理学部, 教授 (50080437)

Co-Investigator(Kenkyū-buntansha) TSURU Toshihide  Gakushuin University, Department of Physics, Assistant, 理学部, 助手 (30306526)
馬 敏雅  学習院大学, 計算機センター, 助手 (60255263)
Project Period (FY) 1998 – 1999
Project Status Completed (Fiscal Year 1999)
Budget Amount *help
¥15,200,000 (Direct Cost: ¥15,200,000)
Fiscal Year 1999: ¥5,700,000 (Direct Cost: ¥5,700,000)
Fiscal Year 1998: ¥9,500,000 (Direct Cost: ¥9,500,000)
KeywordsLight Scattering Tomography / growth-in defects / Laser Scanning Tomography / elastic scattering / photoluminescence mapping / LST (Light Scattering Tomography) / micro-defects / OSF (Oxidation Induced Stacking Faults) / 光散乱トモグラフィー / 評価法 / 半導体 / 微小欠陥 / 半導体微小欠陥
Research Abstract

Since the defect density in ordinary semiconductor crystals is fairly low, determination of the surveillance volume is very important to get correct information about defects in the crystals. Here the volume is defined as that to be searched by a single surveillance trial and should be equal to or a little larger than the reciprocal density of the defects.
The following two-step investigation resulted in successful and novel use of an ordinary IR light scattering tomography (LST) instrument for this purpose. (1) The surveillance thickness of photoluminescence (PL) due to carriers optically injected by a laser beam for LST is usually much larger than that of the laser beam diameter for LST, because the carriers diffuse out emitting PL from the position illuminated by the beam. Thus PL mapping is very effective to search for low density defects in the crystals since the defects act as usually PL killer centers and, sometimes, recombination centers. (2) The intensity modulated positions in the PL mapping were carefully surveyed by layer-by-layer tomography using a finely focused laser beam.
By complimentary combination of the above two methods the defects will be clearly observed.

Report

(3 results)
  • 1999 Annual Research Report   Final Research Report Summary
  • 1998 Annual Research Report
  • Research Products

    (21 results)

All Other

All Publications (21 results)

  • [Publications] N. Nango, S. Iida and T. Ogawa: "An optical study on dislocation clusters in a slowly pulled silicon crystal"J. Appl. Phys.. Vol.86, No.11. 6000-6004 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M. Ma, T. Tsuru, T. Ogawa, Z. Mai, C. Wang, J. Guo, X. Ma and E.G.Wang: "Observation of defects in a C_3N_4/diamond/Si structure by infrared light scattering tomography"J. Phys.: Condens. Matter.. 11. L191-L197 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T. Ogawa and M. Ma: "Nucleation and growth of vacancy agglometatin in CZ silicon crystals."J. Korean Association of Cryst. Growth. Vol. 9. No.3. 286-288 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M. Ma, T. Ogawa, M. Watanabe and M. Eguchi: "Study on defects in CZ-Si crystals grown under three different cusp magnetic fields by infrared scattering tomography."J. Cryst. Growth. 205. 50-58 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M. Ma, N. Nango, T. Ogawa, M. Watanabe and M. Eguchi: "Study on defects in EMCZ-Si crystal by infrared scattering tomography"J. Cryst. Growth. 208. 282-288 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T. Tsuru, and T. Ogawa: "Defects in flux and Czochralski grown β-BaB_2O_4 crystals observed by light scattering tomography"J. Cryst. Growth. (to be published).

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 小川智哉: "結晶工学の基礎"裳華房. 326 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] N. Nango, S. Iida and T. Ogawa: "An optical study on dislocation clusters in a slowly pulled sillcon crystal"J. App. Phys.. 86. 6000-6004 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M. Ma, T. Tsuru, T. Ogawa, Z. Mai, C. Wang, J, Guo, X. Ma and E. G. Wang: "Observation of defects in a CィイD23ィエD2NィイD24ィエD2/diamond/Si structure by infrared light scattering tomography"J. Phys. Condens. Matter. 11. L191-L197 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T. Ogawa and M. Ma: "Nucleation and growth of vacancy agglomeration in CZ silicon crystals"J. Korean Association of Cryst. Growth. 9. 286-288 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M. Ma, T. Ogawa, M. Watanabe and M. Eguchi: "Study on defects in CZ-Si crystals gown under three different cusp magnetic fields by infrared scattering tomography"J. Cryst. Growth. 205. 50-58 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M. Ma, N. Nango, T. Ogawa, M. Watanabe and M. Eguchi: "Study on defects in EMCZ-Si crystal by infrared scattering tomography"J. Cryst. Growth. 208. 282-288 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T. Tsuru and T. Ogawa: "Defects in flux and Czochralski growth β-BaBィイD22ィエD2OィイD24ィエD2 crystals observed by light scattering tomography"J. Cryst. Growth. (to be published).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T. Ogawa: "Fundamentals on Crystal Technology"Shokabo. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] N.Nango,S.Iida and T.Ogawa: "An optical study on dislocation clusters in a slowly pulled silicon crystal"J.App.Phys.. Vol.86,No.11. 6000-6004 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] M.Ma,T.Tsuru,T.Ogawa,Z.Mai,C.Wang,J.Guo,X.Ma and E.G.Wang: "Observation of Defects in a C_3N_4/diamond/Si structure by infrared light scattering tomography"J.Phys.:Condens.Matter.. 11. L191-L197 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] T.Ogawa and M.Ma: "Nuceation and growth of vacancy agglomeration in CZ silicon crystals"J.Korean Association of Cryst.Growth. Vol.9,No.3. 286-288 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] M.Ma,T.Ogawa,M.Watanabe and M.Eguchi: "Study on defects in CZ-Si crystals grown under three different cusp magnetic fields by infrared scattering tomography"J.Cryst.Growth. 205. 50-58 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] M.Ma,N.Nango,T.Ogawa,M.Watanabe and M.Eguchi: "Study on defects in EMCZ-Si crystal by infrared scattering tomography"J.Cryst.Growth. 208. 282-288 (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] T.Tsuru and T.Ogawa: "Defects in flux and Czochralski grown β-BaB_2O_4 crystals observed by light scattering tomography"J.Cryst.Growth. (to be published).

    • Related Report
      1999 Annual Research Report
  • [Publications] 小川 智哉: "結晶工学の基礎"裳華房. 326 (1998)

    • Related Report
      1999 Annual Research Report

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Published: 1998-04-01   Modified: 2016-04-21  

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