A basic study on CMP mechanism and production of CMP slurry
| Project/Area Number |
10450062
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| Research Category |
Grant-in-Aid for Scientific Research (B).
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
機械工作・生産工学
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| Research Institution | SHIBAURA INSTITUTE OF TECHNOLOGY |
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Principal Investigator |
SHIBATA Junii S.I.T.Mech.Eng.Professor, 工学部, 教授 (30052822)
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| Co-Investigator(Kenkyū-buntansha) |
OHTA Masato S.I.T.Chem.Eng.Assoc.Professor, 工学部, 助教授 (50052874)
KIMURA Takayasu S.I.T.Chem.Eng.Professor, 工学部, 教授 (90052711)
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| Project Period (FY) |
1998 – 2000
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| Project Status |
Completed (Fiscal Year 2000)
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| Budget Amount *help |
¥7,700,000 (Direct Cost: ¥7,700,000)
Fiscal Year 2000: ¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 1999: ¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 1998: ¥3,400,000 (Direct Cost: ¥3,400,000)
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| Keywords | CMP / planerization / sol-gel method / slurry / Si water / pad / pH / silica |
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| Research Abstract |
First of all, we investigated a production method of colloidal silica slurry by means of the sol-gel method. In this study, we have established a technology for the production which is applicable enough for actual utilizations. We aimed to control particle size more arbitrary and have possibility in production of silicon grains within a narrower size distribution.
Next, some polishing experiments were performed for test materials of silicon oxide layer. The main results obtained here are as follows :
(1) Work material (SiO_2) can not be polished at all with surly which does not include grains. This suggests that polishing pad itself dose not have any possibility directly for a polishing action.
(2) Fluorine coated fiber pad does not show any polishing action even when usual polishing slurry is used for the work material (SiO_2).
(3) Though the amount of stock removal in the polishing processing tends to increase proportionally with polishing pressure, this tendency can not be necessary recognized clearly in the region of smaller polishing pressure.
(4) Polishing action is generally promoted over a certain pH value (around pH 10). On the other hand, the polishing action is also seen even in low pH value (in acid below pH 7) for certain pad materials.
(5) It is concluded from some experiments that Work-pieces (SiO_2) could be removed by grains which are absorbed on the pad surface.
(6) Metal works like Cu and Al can also be polished with slurry in alkaline Judging from the experimental result mentioned above, CMP mechanism for the silicon oxide (SiO_2) with fumed silica slurry has become possible to be estimated to a certain extent.
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Report
(4 results)
Research Products
(13 results)
