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Development of device structures with simultaneous optical and electronic confinement and microscopic transmission measurements on their lasing, absorption, and gain characteristics

Research Project

Project/Area Number 10450113
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionTHE UNIVERSITY OF TOKYO

Principal Investigator

WATANABE Shuntaro (2000-2001)  Institute for Solid State Physics, THE UNIVERSITY OF TOKYO, Professor, 物性研究所, 教授 (50143540)

秋山 英文 (1998-1999)  東京大学, 物性研究所, 助教授 (40251491)

Co-Investigator(Kenkyū-buntansha) BABA Motoyoshi  Institute for Solid State Physics, THE UNIVERSITY OF TOKYO, Technical Staff, 物性研究所, 教務職員 (60159077)
YOSHITA Masahiro  Institute for Solid State Physics, THE UNIVERSITY OF TOKYO, Research Associate, 物性研究所, 助手 (30292759)
AKIYAMA Hidefumi  Institute for Solid State Physics, THE UNIVERSITY OF TOKYO, Associate Professor, 物性研究所, 助教授 (40251491)
榊 裕之  東京大学, 生産技術研究所, 教授 (90013226)
Project Period (FY) 1998 – 2001
Project Status Completed (Fiscal Year 2001)
Budget Amount *help
¥10,100,000 (Direct Cost: ¥10,100,000)
Fiscal Year 2001: ¥1,900,000 (Direct Cost: ¥1,900,000)
Fiscal Year 2000: ¥1,900,000 (Direct Cost: ¥1,900,000)
Fiscal Year 1999: ¥1,900,000 (Direct Cost: ¥1,900,000)
Fiscal Year 1998: ¥4,400,000 (Direct Cost: ¥4,400,000)
KeywordsQuantum confined structure / Waveguide / Semiconductor / Microscopy / Laser
Research Abstract

We develop novel device structures with simultaneous optical and electronic confinement such as quantum wire lasers, and study their lasing, absorption, and gain characteristics on the basis of our microscopic optical transmission measurement systems.
We first developed computation codes with the finite element methods for design and optimization of quantum-confined structures for electrons and photons. We also developed measurement systems for optically pumped lasing at various temperatures, top-view photoluminescence spectra and images, and transmission light from waveguides.
As for the cleaved-edge overgrown T-shaped quantum wire laser structures, we investigated the problem of interface roughness on (110) overgrowth surfaces, which limit the final quality of the structures, and resolved the problem by introducing a new growth interruption annealing method. We finally realized atomically flat interface without monolayer steps over several tens of micro-meters in lateral extent.
A single quantum wire laser, which is a combination of a single-mode 1-D quantum wire and a single-mode 1-D optical waveguide was fabricated. We observed its lasing for the first time in August 2001. The laser structure includes 2-D quantum wells and 3-D double-hetero-structures in the 1-D optical waveguide and a 2-D quantum well in a 2-D slab optical waveguide. In other words, it contains structures of 1D-electron-1D-photon together with 2D-electron- 1D-photon, 3D-electron-1D-photon, and 2D-electron- 2D-phbton. Furthermore, these structures all make lasing, so that we can compare lasing characteristics of all the structure simultaneously. In addition, we resolved absorption spectra of 1-D excitons and 1-D continuum states, and observed the Sommerfeld factor inherent to 1-D systems for the first time.

Report

(5 results)
  • 2001 Annual Research Report   Final Research Report Summary
  • 2000 Annual Research Report
  • 1999 Annual Research Report
  • 1998 Annual Research Report
  • Research Products

    (81 results)

All Other

All Publications (81 results)

  • [Publications] M.Yoshita: "Formation of flat monolayer-step-free(110)GaAs surfaces by growth interruption annealing during cleaved-edge epitaxial overgrowth"Jpn. J. Appl. Phys. Part. 2 letters. 40. L252-L254 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Makino: "Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg, Zn)O multiple quantum wells"Appl. Phys. Lett.. 78. 1979-1981 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Unuma: "Effects of interface roughness and phonon scattering on intersubband absorption linewidth in a GaAs quantum well"Appl. Phys. Lett.. 78. 3448-3450 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M.Yoshita: "Large terrace formation and modulated electronic states in (110) GaAs quantum wells"Phys. Rev. B. 63. 075305-1-9 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S.Koshiba: "Transformation of GaAs (001)-(111)B facet structure by surface diffusion during molecular beam epitaxy on patterned substrates"J. Cryst. Growth.. 227/228. 62-66 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Tsujikawa: "Fabrication and optical properties of GaAs/AlGaAs quantum dot grown in tetrahedral-shaped recesses on GaAs (111)B substrates by MOVPE"Physica E. 7. 308-316 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] R.Sasagawa: "量子井戸を吸収層と検出層に用いた波長選択性赤外ボロメータ素子の提案と特性解析"電子情報通信学会論文誌C. J83-C-No.6. 523-532 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 吉田正裕: "ソリッドイマージョンレンズを用いた顕微蛍光計測法"日本物理学会誌. 55. 772-778 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M.Morita: "Photolumunescenec of CdS : Mn2+ and Eu3+ nanoparticles dispersed in zirconia sol-gel films"J. of Luminescence. 87-89. 478-481 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.Sakaki: "10nm-scale edge-and step-quantum wires and related structures Progress in their desgn, epitaxial, and physics"Physica E. 4. 56-64 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] J.Kono: "Picosecond time-resolved cyclotron resonance in semiconductors"Appl. Phys. Lett.. 75(8). 1119-1121 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y.Hanamaki: "Spontaneous emission alteration in In GaAs/GaAs vertical cavity surface emitting laser (VCSEL) structures"Semicond. Sci. Technol.. 14. 797-803 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M.Baba: "Application of solid immersion lens to submicron resolution imaging of nano-scale quantume wells"Optical Review. 6. 257-260 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.Yaguchi: "Time-Resolved Photoluminescence of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy"Phys. Stat. Sol(b). 216. 237-240 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Matsusue: "Coherent dynamics of excitons in an island-inserted GaAs/AlAs quantum well structure : Suppression of phase relaxation and a deep quantum beat"Jpn. J. Appl. Phys.. 38. 2735-2740 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M.Yoshita: "Carrier transfer in facet-growth GaAs quantum wells studied by solid immersion photoluminescence microscopy"Inst. Phys. Conf. Ser. No 162, Compound Semiconductors 1998, edited by H. Sakaki, J. C. Woo, N. Yokoyama, and Y. Hirayama, (LOP publishing, Bristol, 1999). 143-148 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S.Watanabe: "Microscopy of electric states contributing to lasing in ridge quantum-wire"Appl. Phys. Lett.. 75. 2190-2192 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K.Koyama: "High collection efficiency in fluorescence microscopy with a solid immersion lens"Appl. Phys. Lett.. 75. 1667-1669 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S.Koshiba: "Fabrication and Control of GaAs/AlAs 10 nano-meter scale Structure by MBE"Transactions of the Materials Research Society of Japan. 24[1]. 93-96 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S.Koshiba: "Selective molecular beam epitaxy (MBE) growth of GaAs/AlAs ridge structures containing 10 nm scale wires and side quantum wells (QWs) and their stimulated emission characteristics"J. Crystal Growth. 201/202. 810-813 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M.Baba: "Aberrations and allowances for errors in a hemisphere solid immersion lens for submicron-resolution photoluminescence microscopy"J. Appl. Phys.. 85. 6923-6925 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Someya: "Shape analysis of wave functions in T-shaped quantum wires by means of magneto-photoluminescence spectroscopy"Soli State Communications. 108. 923-927 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K.B.Nordstrom: "Excitonic dynamical Franz-Keldysh effect"Phys. Rev. Lett.. 81. 457-460 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M.Yoshita: "Solid immersion photoluminescence microscopy on carrier diffusion and drift in facet-growth GaAs quantum wells"Appl. Phys. Lett.. 73. 2965-2967 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M.Yoshita: "Application of solid immersion lens to high-spatial resolution photoluminescence imaging of GaAs quantum wells at low temperatures"Appl. Phys. Lett.. 73. 635-637 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S.Watanabe: "Stimulated emission in ridge quantum wire laser structures measured with optical pumping and microscopic imaging methods"Appl. Phys.. 73. 511-513 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.Akiyama: "One-dimensional excitons in GaAs quantum wires"J. Phys. Condensed Matter. 10. 3095-3139 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M.Yoshita: "Micro-photoluminescence characterization of cleaved edge overgrowth T-shaped InGaAs quantum wires"J. Appl. Phys.. 83. 3777-3783 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Unuma: "Effects of interface roughness and phonon scattering on intersubband absorption line width in a GaAs quantum well"Appl. Phys. Lett.. 78(22). 3448-3450 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Makino: "Temperature dependence of near, ultra violet photoluminescence in ZnO/(Mg, Zn)O multiple quantum wells"Appl. Phys. Lett.. 78(14). 1979-1981 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M. Yoshita: "Formation of flat monolayer-step-free (110) GaAs surfaces by growth interruption overgrowth"Jpn. J. Appl. Phys. part2. 40. L252-L254 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M. Yoshita: "Large terrace formation and modulated electronic states in (110) GaAs quantum wells"Phys. Rev. B. 63. 075305-1-9 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Tsujikawa: "Fabrication and optical properties of GaAs/AlGaAs quantum dot grown in tetrahedral-shaped recesses on GaAs (111)B substrates by MOVPE"Physica E. 7. 308-316 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M. Morita: "Photoluminescence of CdS : Mn2+ and Eu3+ nanoparticles dispersed in zirconia; sol-gel films"J. of Luminescence. 87-89. 478-481 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Sakaki: "10 nm scale edge and step-quantum wires and related structures: Progress in their desgn, epitaxial synthesis and physics"Physica E. 456-64. (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] J. Kono: "Picosecond time-resolved cyclotron resonance in semiconductors"Appl. Phys. Lett.. 75(8). 1119-1121 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Hanamaki: "Spontaneous emission alteration in InGaAs/GaAs vertical cavity surface emitting laser (VCSEL) structures"Semicond. Sci. Technol.. 14. 797-803 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M. Baba: "Application of solid immersion lens to submicron resolution imaging of nano-scale quantume wells"Optical Review. 6. 257-260 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Yaguchi: "Time-Resolved Photoluminescence of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy"Phys. Stat. Sol (b). 216. 237-240 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Matsusue: "Coherent dynamics of excitons in an island-inserted GaAs/AlAs quantum well structure: Suppression of phase relaxation and a jeep quantum beat"Jpn. J. Appl. Phys.. 38. 2735-2740 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M. Yoshita: "Carrier transfer in facet-growth GaAs quantum wells studied by solid immersion photoluminescence microscopy"Inst. Phys. Conf. Ser. No 162, Compound Semiconductors 1998, edited by H. Sasaki, J. C. Woo, N. Yokoyama, and Y. Hirayama, (IOP publishing, Bristol, 1999). 143-148 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S. Watanabe: "Microscopy of electric states contributing to lasing in ridge quantum-wire"Appl. Phys. Lett.. 75. 2190-2192 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Koyama: "High collection efficiency in fluorescence microscopy with a solid immersion lens"Appl. Phys. Lett.. 75. 1667-1669 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S. Koshiba: "Fabrication and Control of GaAs/AlAs 10 nano-meter scale Structure by MBE"Transactions of the Materials Research Society of Japan. 24 [1]. 93-96 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S. Koshiba: "Selective molecular beam epitaxy (MBE) growth of GaAs/AlAs ridge structures containing 10 nm scale wires and side quantum wells (QWs) and their stimulated emission characteristics"J. Crystal Growth. 201/202. 810-813 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M. Baba: "Aberrations and allowances for errors in a hemisphere solid immersion lens for submicron-resolution photoluminescence microscopy"J. Appl. Phys.. 85. 6923-6925 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Someya: "Shape analysis of wave functions in T-shaped quantum wires by means of magnet-photoluminescence spectroscopy"Solid State Communications. 108. 923-927 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. B. Nordstrom: "Excitonic dynamical Franz-Keldysh effect"Phys. Rev. Lett. 81. 457-60 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M. Yoshita: "Solid immersion photoluminescence microscopy on carrier diffusion and drift in facet-growth GaAs quantum wells"Appl. Phys. Lett.. 73. 2965-2967 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M. Yoshita: "Application of solid immersion lens to high-spatial resolution photoluminescence imaging of GaAs quantum wells at low temperatures"Appl. Phys. Lett.. 73. 635-637 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S. Watanabe: "Stimulated emission in ridge quantum wire laser structures measured with optical pumping and microscopic imaging methods"Appl. Phys. Lett.. 73. 511-513 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Akiyama: "One-dimensional excitons in GaAs quantum wires"J. Phys. Condensed Matter. 10. 3095-3139 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M. Yoshita: "Micro-photoluminescence characterization of cleaved edge overgrowth T-shaped InGaAs quantum wires"J. Appl. Phys.. 83. 3777-83 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M.Yoshita: "Formation of flat monolayer-step-free(11O)GaAs surfaces by growth interruption annealing during cleaved-edge epitaxial overgrowth"Jpn. J. Appl. Phys. Part.2 letters. 40. L252-L254 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Makino: "Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg, Zn)O multiple quantum wells"Appl. Phys. Lett.. 78. 1979-1981 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Unuma: "Effects of interface roughness and phonon scattering on intersubband absorption linewidth in a GaAs quantum well"Appl. Phys. Lett.. 78. 3448-3450 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] S.Koshiba: "Transformation of GaAs (001)-(111)B facet structure by surface diffusion during molecular beam epitaxy on patterned substrates"J. Gryst. Growth. 227/228. 62-66 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] M.Morita: "Photoluminescence of CdS : Mn2+and Eu3+ nanoparticles dispersed in zirconia sol-gel films"J.Luminescence. 87-89. 478-481 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 吉田正裕: "ソリッドイマージョンレンズを用いた顕微蛍光計測法"日本物理学会誌. 55. 772-778 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.Tsujikawa: "Fabrication and optical properties of GaAs/AlGaAs quantum dot grown in tetrahedral-shaped recesses on GaAs (111) B substrates by MOVPE"Physica E. 7. 308-316 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] M.Yoshita: "Large terrace formation and modulated electronic states in (110) GaAs quantum wells"Phys.Rev.B. 63. 075305-1-9 (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] M.Yoshita: "Formation of flat monolayer-step-free (110) GaAs surfaces by growth interruption annealing during cleaved-edge epitaxial overgrowth"Jpn.J.Appl.Phys.Part.2 letters. 40(March 15 issue in press). (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.Makino: "Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg, Zn)O multiple quantum wells"Appl.Phys.Lett.. 17(March 26 Issue in press). (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] S.Watanabe: "Microscopy of electronic states contributing to lasing in ridge quantum wire laser structure,"Appl.Phys.Lett.. 75. 2190-2192 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] S.Koshiba,: "Selective molecular beam epitaxy(MBE)growth of GaAs/AlAs ridge structures containing 10 nm scale wires and side quantum wells(QWs)and their stimulated emission sharacteristics,"J.Crystal.Growth. 201/202. 810-813 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] S.Koshiba,: "Fabrication and Control of GaAs/AlAs 10 nano-meter scale Structure by MBE,"Transactions of the Materials Research Society of Japan. 24[1]. 93-96 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] M.Yoshita,: "Carrier transfer in facet-growth GaAs quantum wells studied by solid immersion photoluminescence microscopy,"J Phys.Conf Ser No162/Conpound Semiconductors. 162. 143-148 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] M.Baba,: "Aberrations and allowances for errors in a hemisphere solid immersion lens for submicronresolition photoluminescence microscopy"J.Appl.Plrys.. 85. 6923-6925 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] M.Baba,: "Application of solid immersion lens to submicron resolution imaging of nano-scale quantum wells"Opt.Rev.. 6. 257 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] K.Koyama,: "High collection efficiency in fluorescence microscopy with a solid immersion lens"Appl.Phys.Lett.. 75. 1667-1669 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] J.Kono,: "Picosecond time-resolved cyclotron resonance in semiconductors"Appl.Phys.Lett.. 75. 1119-1121 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] Y.Hanamaki,: "Spontaneous emission alteration in InGaAs/GaAs vertical-cavity surfase-emitting laser structures"Semicond.Sci Technol.. 14. 797-803 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] H.Sakaki,: "10nm-scale edge-and step-quantum wires and related structures : Progress in their design, epitaxial synthesis and physics"Physica E. 4. 56-64 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] T.Matsusue,: "Conherent dynamics of excitons in an island-inserted GaAs/AlAs quantum well structure : Suppression of phase relaxation and a deep quantum beat"Jpn.J.Appl.Phys,. 38. 2735-2740 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] H.Yaguchi,: "Time-resolved photoluminescence of cubic GaN grown by metalorganic vapor phase epitaxy"Phys.Stat.Sol.(b). 216. 237-240 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] M.Yoshita: "Micro-photoluminescence characterization of cleaved edge overgrowth T-shaped InGaAs quantum wires" Journal of Applied Physics. 83. 3777-3783 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] H.Akiyama: "One-dimensional excitons in GaAs quantum wires" Journal of Physics : Condensed Matter. 10. 3095-3139 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] S.Watanabe: "Stimulated emission in ridge quantum wire laser structures measured with optical pumping and microscopic imaging methods" Applied Physics Letters. 73. 511-513 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] M.Yoshita: "Application of solid immersion lens to high-spatial resolution photoluminescence imaging of GaAs quantum wells at low temperatures" Applied Physics Letters. 73. 635-637 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] M.Yoshita: "Solid immersion photoluminescence microscopy on carrier diffusion and drift in facet-growth GaAs quantum wells" Applied Physics Letters. 73. 2965-2967 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] K.Nordstrom: "Excitonic dynamical Franz-Keldysh effect" Physical Review Letters. 81. 457-460 (1998)

    • Related Report
      1998 Annual Research Report

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Published: 1998-04-01   Modified: 2016-04-21  

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