| Project/Area Number |
10450123
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| Research Category |
Grant-in-Aid for Scientific Research (B).
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka University |
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Principal Investigator |
MORITA Mizuho GRADUATE SCHOOL OF ENGINEERING, Osaka University, PROFESSOR, 大学院・工学研究科, 教授 (50157905)
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| Project Period (FY) |
1998 – 2000
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| Project Status |
Completed (Fiscal Year 2000)
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| Budget Amount *help |
¥14,100,000 (Direct Cost: ¥14,100,000)
Fiscal Year 2000: ¥4,200,000 (Direct Cost: ¥4,200,000)
Fiscal Year 1999: ¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 1998: ¥6,300,000 (Direct Cost: ¥6,300,000)
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| Keywords | SEMICONDUCTOR DEVICE / SEMICONDUCTOR PROCESS / SILICON / SILICON DIOXIDE / SILICON ON INSULATOR |
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| Research Abstract |
A program simulating current-voltage characteristics through tunneling probability calculation of electrons using successive step approximation of energy barriers has been developed so as to design silicon/silicon dioxide double barriers structures, and current-voltage characteristics of double barriers structures at temperatures, and particularly at room temperature, have been simulated. Energy barrier heights at the silicon-silicon dioxide interface of metal-oxide-semiconductor (MOS) diodes fabricated have been measured by internal photoemission, and energy barrier heights of ultrathin silicon dioxide films have been determined for the first time. An thermal oxidation technology forming ultrathin silicon dioxide films with high electrical insulating performance and reliability has been developed in order to realize quantum devices with silicon/silicon dioxide double barriers structures, and the controllability of tunneling current has been enhanced because leak current through MOS diodes with an ultrathin silicon dioxide film can be decreased by the precise control of oxide growth during wafer heating-up processes. The analysis of current-voltage characteristics of MOS diodes fabricated using the simulation program has suggested that the energy barrier height of a silicon dioxide film for the tunneling of electrons is lowered as the film is thin in the ultrathin regime. A technology bonding one wafer covered with an ultrathin silicon dioxide film to another wafer has been developed to fabricate the vertical structure of silicon/silicon dioxide double barriers, and silicon-on-insulator substrates with the buried oxide of an ultrathin silicon dioxide film have been prepared.
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